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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2016-03-03
Hokkaido Centennial Hall, Hokkaido Univ. [Invited Talk] A Recent Development in Thin-Film Device Applications using Oxide Semiconductors
Toshihiko Maemoto, Yi Sun, Souhei Matsuda, Shota Sasaki, Kouhei Ashida, Oliver Kaltstein, Masatoshi Koyama, Kazuto Koike, Mitsuaki Yano, Shigehiko Sasa (Osaka Inst. Tech.) ED2015-121 SDM2015-128
We report on the fabrication and characterization of flexible thin-film-transistors using a transparent zinc oxide (ZnO)... [more] ED2015-121 SDM2015-128
SANE 2015-10-30
Osaka OIT UMEKITA Knowledge Center [Special Talk] Radiation Hardness of Wide Bandgap Semiconductors
Mitsuaki Yano (OIT) SANE2015-43
Space radiation environments provide the cumulative degradation by total-dose effects and displacement damage effects as... [more] SANE2015-43
ED 2015-08-04
Tokyo Kikai-Shinko-Kaikan Bldg. Direct thermal-type gas sensor by P-type MgCr2O4-TiO2 ceramics
Jiro Terada, Sigeru Omatsu, Shigehiko Sasa, Mitsuaki Yano (O. I. T.) ED2015-52
Using an element of two layers of structure that controlled the TiO2 content of p-type semiconductor of MgCr2O4-TiO2 cer... [more] ED2015-52
ED, MW 2010-01-14
Tokyo Kikai-Shinko-Kaikan Bldg [Invited Talk] Development of high-performance ZnO-based FETs -- Device applications and microwave performance --
Shigehiko Sasa, Kazuto Koike, Toshihiko Maemoto, Mitsuaki Yano, Masataka Inoue (Osaka Inst. of Tech.) ED2009-184 MW2009-167
Zinc Oxide (ZnO) has various advantages over other wide gap semiconductors. In order to evaluate its material feasibilit... [more] ED2009-184 MW2009-167
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