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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED 2009-06-25
12:00		 Overseas Haeundae Grand Hotel, Busan, Korea Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemical), Masaaki Higuchi (TOSHIBA), Sigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) ED2009-86 SDM2009-81		  [more] ED2009-86 SDM2009-81
pp.157-160
SDM 2008-10-10
16:15		 Miyagi Tohoku Univ. Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemi.), Masaaki Higuchi (Toshiba), Shigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2008-167		 Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen-hydrogen radicals on Si(... [more] SDM2008-167
pp.69-74
SDM 2007-06-08
09:00		 Hiroshima Hiroshima Univ. ( Faculty Club) Study on subnitride and valence band offset at Si3N4 / Si interface formed using nitrogen radicals
Akinobu Teramoto, Takashi Aratani, Masaaki Higuchi (Tohoku Univ.), Eiji Ikenaga (JASRI), Hiroshi Nohira (Musashi Institute of Technology), Shigetoshi Sugawa, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2007-39		 An area density of subnitride and a valence band offset in Si3N4 films formed on Si(100), (111), (110) surface by microw... [more] SDM2007-39
pp.43-48
 Results 1 - 3 of 3  /   
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