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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW |
2014-03-05 13:55 |
Ehime |
Ehime University |
Si/GaAs Hybrid Power Amplifier Modules for WCDMA Handset Terminals Teruyuki Shimura, Kazuya Yamamoto, Hiroaki Seki, Morishige Hieda, Yoshihito Hirano (Mitsubishi Electric) MW2013-218 |
Single-band (SB) and multiband (MB) power amplifier modules (PAM) are demonstrated for WCDMA handsets applications. The ... [more] |
MW2013-218 pp.123-128 |
EMT, PN, LQE, OPE, MWP, EST, IEE-EMT [detail] |
2012-01-26 15:15 |
Osaka |
Osaka Univ. Convention Center |
AlGaInAs DFB-LD with Ru-doped InP buried Hetero-structure for 25.8Gbps direct modulation Yohei Hokama, Go Sakaino, Toru Takiguchi, Takashi Nagira, Harunaka Yamaguchi, Masato Suzuki, Eitaro Ishimura, Atsushi Sugitatsu, Teruyuki Shimura (Mitsubishi Electric) PN2011-47 OPE2011-163 LQE2011-149 EST2011-97 MWP2011-65 |
We developed 1.3μm AlGaInAs DFB-LD with Ru-doped InP buried Hetero-structure. In this work, we got enough power and larg... [more] |
PN2011-47 OPE2011-163 LQE2011-149 EST2011-97 MWP2011-65 pp.95-98 |
ED, MW |
2010-01-15 10:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
A Low-Voltage, Broadband Operation HBT Power Amplifier for CDMA Applications Kazuya Yamamoto, Atsushi Okamura, Takayuki Matsuzuka, Yutaka Yoshii, Satoshi Suzuki, Masatoshi Nakayama, Teruyuki Shimura, Naohito Yoshida (Mitsubishi Electric Corp.) ED2009-193 MW2009-176 |
This paper describes circuit design and measurement results of an HBT MMIC power amplifier module (PA) operating with a ... [more] |
ED2009-193 MW2009-176 pp.105-110 |
ED, MW |
2008-01-17 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Study on a Current-Mirror Based GaAs HBT RF Power Detector for Wireless Applications Kazuya Yamamoto, Miyo Miyashita, Hitoshi Kurusu, Nobuyuki Ogawa, Teruyuki Shimura (MELCO) ED2007-219 MW2007-150 |
This paper describes circuit design and measurement results of a newly developed GaAs-HBT RF power detector for use in w... [more] |
ED2007-219 MW2007-150 pp.71-76 |
MW, ED |
2007-01-19 09:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A 2.4-V Reference Voltage Operation InGaP-HBT MMIC Power Amplifier for CDMA Handsets Takao Moriwaki, Kazuya Yamamoto, Nobuyuki Ogawa, Takeshi Miura, Kosei Maemura, Teruyuki Shimura (Mitsubishi Electric) |
This paper describes circuit design and measurement results of a newly developed InGaP/GaAs HBT MMIC power amplifier mod... [more] |
ED2006-226 MW2006-179 pp.143-148 |
MW, ED |
2007-01-19 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A 0/20-dB Step Attenuator Using GaAs-HBT Compatible, AC-Coupled, Stack-Type Base-Collector Diode Switches Kazuya Yamamoto, Miyo Miyashita, Nobuyuki Ogawa, Takeshi Miura, Teruyuki Shimura (Mitsubishi Electric) |
This paper describes a GaAs-HBT compatible, base-collector diode step attenuator for 3.5-GHz band wireless applications.... [more] |
ED2006-231 MW2006-184 pp.173-178 |
MW, ED |
2005-01-18 16:40 |
Tokyo |
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- Kazuya Yamamoto, Satoshi Suzuki, Nobuyuki Ogawa, Kenichiro Choumei, Teruyuki Shimura, Kosei Maemura (Mitsubishi Electric) |
This paper describes the circuit design and measurement results of an InGaP/GaAs HBT MMIC low-noise amplifier (LNA) for ... [more] |
ED2004-226 MW2004-233 pp.83-87 |
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