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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 13 of 13  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2024-04-12
14:55
Kanagawa
(Primary: On-site, Secondary: Online)
[Invited Lecture] 遠端ビット線プリチャージとウィークビットトラッキング回路を用いて0.48 - 1.2V動作電圧範囲と27.6Mbit/mm^2の高集積密度を実現する3ナノメートルSRAM
Yumito Aoyagi, Makoto Yabuuchi, Tomotaka Tanaka, Yuichiro Ishii, Yoshiaki Osada, Takaaki Nakazato, Koji Nii, Isabel Wang, Yu-Hao Hsu, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang (TSMC)
 [more]
SDM, ICD, ITE-IST [detail] 2018-08-08
13:15
Hokkaido Hokkaido Univ., Graduate School of IST M Bldg., M151 [Invited Lecture] A Highly Symmetrical 10T 2-Read/Write Dual-port SRAM Bitcell Design In 28nm High-k/Metal-gate Planar Bulk CMOS Technology
Yuichiro Ishii, Miki Tanaka, Makoto Yabuuchi, Yohei Sawada, Shinji Tanaka, Koji Nii (Renesas), Tien Yu Lu, Chun Hsien Huang, Shou Sian Chen, Yu Tse Kuo, Ching Cheng Lung, Osbert Cheng (UMC) SDM2018-40 ICD2018-27
We propose a highly symmetrical 10T 2-read/write (2RW) dual-port (DP) SRAM bitcell in 28-nm high-k/metal-gate planar bul... [more] SDM2018-40 ICD2018-27
pp.83-88
ICD 2018-04-20
10:45
Tokyo   [Invited Lecture] A Dynamic Power Reduction in Synchronous 2RW 8T Dual-Port SRAM by Adjusting Wordline Pulse Timing with Same/Different Row Access Mode
Yoshisato Yokoyama, Yuichiro Ishii, Haruyuki Okuda, Koji Nii (REL) ICD2018-9
(To be available after the conference date) [more] ICD2018-9
pp.33-38
ICD 2017-04-21
10:25
Tokyo   [Invited Lecture] A 6.05-Mb/mm2 16-nm FinFET Double Pumping 1W1R 2-port SRAM with 313ps Read Access Time
Yohei Sawada, Makoto Yabuuchi, Masao Morimoto (REL), Toshiaki Sano (RSD), Yuichiro Ishii, Shinji Tanaka (REL), Miki Tanaka (RSD), Koji Nii (REL) ICD2017-12
 [more] ICD2017-12
pp.63-65
ICD, CPM, ED, EID, EMD, MRIS, OME, SCE, SDM, QIT
(Joint) [detail]
2017-01-31
15:25
Hiroshima Miyajima-Morino-Yado(Hiroshima) A 5.92-Mb/mm2 28-nm Pseudo 2-Read/Write Dual-Port SRAM Using Double Pumping Circuitry
Yuichiro Ishii, Makoto Yabuuchi, Yohei Sawada, Masao Morimoto, Yasumasa Tsukamoto (Renesas Electronics), Yuta Yoshida, Ken Shibata, Toshiaki Sano (Renesas System Design), Shinji Tanaka, Koji Nii (Renesas Electronics) EMD2016-86 MR2016-58 SCE2016-64 EID2016-65 ED2016-129 CPM2016-130 SDM2016-129 ICD2016-117 OME2016-98
We propose pseudo dual-port (DP) SRAM by using 6T single-port (SP) SRAM bitcell with double pumping circuitry, which ena... [more] EMD2016-86 MR2016-58 SCE2016-64 EID2016-65 ED2016-129 CPM2016-130 SDM2016-129 ICD2016-117 OME2016-98
pp.87-92
ICD 2016-04-14
10:10
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] A Cost Effective Test Screening Method on 40-nm 4-Mb Embedded SRAM for Low-power MCU
Yuta Yoshida (RSD), Yoshisato Yokoyama, Yuichiro Ishii (Renesas Electronics), Toshihiro Inada, Koji Tanaka, Miki Tanaka, Yoshiki Tsujihashi (RSD), Koji Nii (Renesas Electronics) ICD2016-1
An embedded single-port SRAM with cost effective test screening circuitry is demonstrated for low-power micr... [more] ICD2016-1
pp.1-6
SDM 2016-01-28
14:30
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] 2RW Dual-port SRAM Design Challenges in Advanced Technology Nodes
Koji Nii, Makoto Yabuuchi (Renesas), Yoshisato Yokoyama (Renesas System Design), Yuichiro Ishii, Takeshi Okagaki, Masao Morimoto, Yasumasa Tsukamoto (Renesas), Koji Tanaka, Miki Tanaka (Renesas System Design), Shinji Tanaka (Renesas) SDM2015-125
 [more] SDM2015-125
pp.21-25
ICD 2015-04-16
13:25
Nagano   [Invited Lecture] A 512-kb 1-GHz 28-nm Partially Write Assisted Dual-Port SRAM with Self Adjustable Negative Bias Bitline
Shinji Tanaka (Renesas Electronics), Yuichiro Ishii, Makoto Yabuuchi (Renesas), Toshiaki Sano (Renesas System Design), Koji Tanaka, Yasumasa Tsukamoto, Koji Nii, Hirotoshi Sato (Renesas) ICD2015-2
 [more] ICD2015-2
pp.5-8
ICD 2015-04-16
13:50
Nagano   [Invited Lecture] 40 nm Dual-port and Two-port SRAMs for Automotive MCU Applications under the Wide Temperature Range of -40 to 170℃ with Test Screening Against Write Disturb Issues
Yoshisato Yokoyama, Yuichiro Ishii, Tatsuya Fukuda, Yoshiki Tsujihashi, Atsushi Miyanishi (Renesas Electronics), Shinobu Asayama, Keiichi Maekawa, Kazutoshi Shiba (Renesas Semiconductor Manufacturing Corporation), Koji Nii (Renesas Electronics) ICD2015-3
(To be available after the conference date) [more] ICD2015-3
pp.9-14
ICD, SDM 2014-08-05
10:50
Hokkaido Hokkaido Univ., Multimedia Education Bldg. 40nm ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU
Yoshisato Yokoyama, Yuichiro Ishii, Hidemitsu Kojima, Atsushi Miyanishi, Yoshiki Tsujihashi, Shinobu Asayama, Kazutoshi Shiba, Koji Tanaka, Tatsuya Fukuda, Koji Nii, Kazumasa Yanagisawa (Renesas) SDM2014-74 ICD2014-43
(To be available after the conference date) [more] SDM2014-74 ICD2014-43
pp.65-70
SDM, ICD 2013-08-02
09:50
Ishikawa Kanazawa University A cost-effective 45nm 6T-SRAM reducing 50mV Vmin and 53% standby leakage with multi-Vt asymmetric halo MOS and write assist circuitry
Koji Nii, Makoto Yabuuchi, Hidehiro Fujiwara, Yasumasa Tsukamoto, Yuichiro Ishii (Renesas Electronics), Tetsuya Matsumura (Nihon Univ.), Yoshio Matsuda (Kanazawa Univ.) SDM2013-76 ICD2013-58
 [more] SDM2013-76 ICD2013-58
pp.53-57
ICD 2012-04-24
11:15
Iwate Seion-so, Tsunagi Hot Spring (Iwate) [Invited Talk] Write-/Read- Disturb Issues and Circuit Solutions
Yuichiro Ishii, Yasumasa Tsukamoto, Koji Nii, Hidehiro Fujiwara, Makoto Yabuuchi, Koji Tanaka, Shinji Tanaka, Yasuhisa Shimazaki (Renesas Electronics) ICD2012-11
This paper describes some circuit techniques for an 8T dual-port (DP) SRAM to improve its minimum operating voltage agai... [more] ICD2012-11
pp.55-60
SDM, ICD 2011-08-26
15:05
Toyama Toyama kenminkaikan A 28-nm dual-port SRAM macro with active bitline equalizing circuitry against write disturb issue
Yuichiro Ishii, Hidehiro Fujiwara, Koji Nii (Renesas Electronics), Hideo Chigasaki, Osamu Kuromiya, Tsukasa Saiki (Renesas Design), Atsushi Miyanishi, Yuji Kihara (Renesas Electronics) SDM2011-92 ICD2011-60
We propose circuit techniques for an 8T dual-port (DP) SRAM to improve its minimum operating voltage (Vddmin). Active bi... [more] SDM2011-92 ICD2011-60
pp.109-114
 Results 1 - 13 of 13  /   
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