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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, OPE, CPM, EMD, R 2023-08-25
09:50
Miyagi Tohoku university
(Primary: On-site, Secondary: Online)
[Invited Talk] Progress and Future Prospect of Photonic Integrated Devices using InP Chip/SOI Wafer Bonding Technique
Hideki Yagi (PETRA), Nobuhiko Nishiyama (Tokyo Tech), Naoki Fujiwara, Masaki Yanagisawa (PETRA) R2023-28 EMD2023-23 CPM2023-33 OPE2023-72 LQE2023-19
The development of beyond fifth-generation (5G) and sixth-generation (6G) mobile communication systems is accelerating t... [more] R2023-28 EMD2023-23 CPM2023-33 OPE2023-72 LQE2023-19
pp.59-62
OPE, OCS, LQE 2022-10-21
14:35
Ehime
(Primary: On-site, Secondary: Online)
Low energy direct modulation of a 5-um-long active region on Si DBR laser
Erina Kanno, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo (NTT) OCS2022-36 OPE2022-82 LQE2022-45
In order to introduce optical interconnects into short-distance interconnects, ultra-low power consumption lasers are ne... [more] OCS2022-36 OPE2022-82 LQE2022-45
pp.100-103
LQE, LSJ 2018-05-25
13:25
Fukui   Comparison of GaInAsP laser diode between hydrophilic bonded InP/Si substrate and InP substrate
Hiromu Yada, Kazuki Uchida, Hirokazu Sugiyama, Periyanayagam Gandhi Kallarasan, Xu Han, Masaki Aikawa, Natsuki Hayasaka, Kazuhiko Shimomura (Sophia Univ.) LQE2018-16
We have proposed monolithic integration of optical device on hydrophilic bonded InP/Si substrate via MOVPE. We have fabr... [more] LQE2018-16
pp.25-28
LQE, OPE, EMD, R, CPM 2016-08-25
09:20
Hokkaido   Continuous-wave Operation of Ultra-short Cavity Membrane Lasers on Si Substrates
Erina Kanno, Koji Takeda, Takuro Fujii, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo (NTT) R2016-19 EMD2016-23 CPM2016-32 OPE2016-53 LQE2016-28
It is required to reduce energy consumptions of directly modulated semiconductor lasers to realize very short distance o... [more] R2016-19 EMD2016-23 CPM2016-32 OPE2016-53 LQE2016-28
pp.1-4
OPE, LQE 2016-06-17
13:15
Tokyo   Fabrication of GaInAsP laser using directly bonded InP/Si
Tetsuo Nishiyama, Keiichi Matsumoto, Jyunya Kishikawa, Yuya Onuki, Naoki Kamada, Kazuhiko Shimomura (Sophia Univ.) OPE2016-12 LQE2016-22
Integration technique of optical devices on silicon platform have been proposed. This technique uses direct bonded thin ... [more] OPE2016-12 LQE2016-22
pp.15-20
LQE, OPE 2015-06-19
13:25
Tokyo   Integration of III-V light emitting devices on heterogenious substrate employing directly-bonded InP platform
Keiichi Matsumoto, Yoshinori Kanaya, Junya Kishikawa, Kazuhiko Shimomura (Sophia Univ.) OPE2015-13 LQE2015-23
Thin film InP layers have been bonded on Si substrate and Quarts substrate using wafer direct bonding technique and inte... [more] OPE2015-13 LQE2015-23
pp.15-20
OPE, LQE 2014-06-20
14:00
Tokyo   Electro-luminescence obtained from QDs LED grown on wafer bonded InP/Si substrate
Keiichi Matsumoto, Yoshinori Kanaya, Junya Kishikawa, Kazuhiko Shimomura (Sophia Univ.) OPE2014-15 LQE2014-20
We have demonstrated (Ga)InAs/InP QD arrayed waveguide LED on directly bonded InP/Si substrate. Electroluminescence sign... [more] OPE2014-15 LQE2014-20
pp.15-18
LQE, OPE 2013-06-21
11:25
Tokyo   MOVPE growth realized on heterogeneous substrate employing directly-bonded InP template
Keiichi Matsumoto, Xinxin Zhang, Yoshinori Kanaya, Kazuhiko Shimomura (Sophia Univ.) OPE2013-9 LQE2013-19
Integrating III-V materials which enables high-speed computer with large-capacity on Si has been required. Therefore, we... [more] OPE2013-9 LQE2013-19
pp.13-18
LQE 2012-12-13
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. [Encouragement Talk] Advances in Quantum Dot Lasers on Silicon Substrates by Wafer Bonding
Katsuaki Tanabe, Yasuhiko Arakawa (Univ. Tokyo) LQE2012-128
III-V semiconductor compound light sources monolithically integrated on Si substrates or waveguides would be promising f... [more] LQE2012-128
pp.31-33
 Results 1 - 9 of 9  /   
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