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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
WPT (2nd) |
2022-12-05 - 2022-12-06 |
Kyoto |
Uji Obaku Plaza Kihada Hall, Uji Campus, Kyoto University (Primary: On-site, Secondary: Online) |
Field-Plate Length Dependence of 2.4-GHz Rectification Characteristics of Gated-Anode GaN HEMT Based Diode Gen Taguchi, Naoya Kishimoto, Youichi Tsuchiya, Debaleen Biswasa, Ma Qiang (Nagoya Inst. of Tech.), Yuji Ando, Hidemasa Takahashi (Nagoya Univ), Kenji Itoh, Naoki Sakai (Kanazawa Inst. of Tech), Akio Wakejima (Nagoya Inst. of Tech.) |
We demonstrate field-plate (FP) length dependence of 2.4-GHz rectification characteristics of gated-anode GaN HEMT based... [more] |
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ED |
2016-01-20 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
The unique features of GaN power devices and the technologies to utilize their innate advantages Ken Nakahara, Kentaro Chikamatsu, Atsushi Yamaguchi, Naotaka Kuroda (ROHM) ED2015-115 |
The GaN power device have a very low value of RonQg as a figure of merit for power devices, where Ron denotes on-state r... [more] |
ED2015-115 pp.19-24 |
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