IEICE Technical Report

Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2008-11-13 - 2008-11-14 / Issue Date : 2008-11-06

SDM2008-169
[Invited Talk] Circuit designs of Analog Circuits in Advanced System LSIs
Shiro Dosho, Shiro Sakiyama, Takashi Morie, Kazuo Matsukawa (Matsushita Electric Co. Ltd.)
pp. 1 - 8

SDM2008-170
[Invited Talk] Circuit Design and Device Modeling for Millimeter-Wave CMOS Applications
Minoru Fujishima (Univ. of Tokyo)
pp. 9 - 14

SDM2008-171
A 13.75ns fast holographic reconfiguration
Mao Nakajima, Minoru Watanabe (Shizuoka Univ.)
pp. 15 - 20

SDM2008-172
Fault tolerance of the holographic memory in the large scale opptically reconfigurable gate array.
Daisaku Seto, Minoru Watanabe (Shizuoka Univ.)
pp. 21 - 26

SDM2008-173
A 3D simulator for designing next generation semiconductor devices, Part 1 -- Development of a strongly stable simulator --
Shogo Sakurai, Zhu Riming, Masahiro Sato, Ken Yamaguchi (AdvanceSoft Corp.)
pp. 27 - 32

SDM2008-174
A 3D silumator for designing next generation semiconductor devices, Part2 -- Quick generators of 3D structures and high-quaulity meshes --
Zhu Riming, Masahiro Sato, Shogo Sakurai, Ken Yamaguchi (AdvanceSoft Corp.)
pp. 33 - 36

SDM2008-175
A Discretization Method of Quantum Drift-Diffusion Model for Time-Dependent Device Simulations
Tomoko Shimada, Shinji Odanaka (Osaka Univ.)
pp. 37 - 42

SDM2008-176
Impact of Non-parabolic Band on Threshold Voltage Shift of Nano-sacle SOI MOSFET -- Proposal of Model and Examination of its Availability --
Daisuke Kyokane, Yasuhisa Omura (Kansai Univ.)
pp. 43 - 48

SDM2008-177
[Invited Talk] LDMOS Device Modeling and Circuit Design -- Device Modeling for Circuit Design --
Hirobumi Watanabe, Takaaki Negoro (Ricoh Co. Ltd.)
pp. 49 - 54

SDM2008-178
[Invited Talk] [Invited]Robust Design of Embedded SRAM on Deep-submicron Technology
Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Hirofumi Shinohara (Renesas Technology Corp.)
pp. 55 - 60

SDM2008-179
A Quantum Mechanical Study of Effect of Single Attractive Ions on Electron Transport in Nanoscale Transistors
Yoshinari Kamakura, Gennady Mil'nikov, Nobuya Mori (Osaka Univ.), Tatsuya Ezaki (Hiroshima Univ.)
pp. 61 - 66

SDM2008-180
Three-dimensional NEGF simulation of gate tunnel current in ultra-small MOSFETs
Hideki Minari, Daisuke Nishitani, Nobuya Mori (Osaka Univ.)
pp. 67 - 70

SDM2008-181
High-field Transport in Silicon Analyzed by Flux Equation
Naohito Morozumi, Kenji Natori (Univ. of Tsukuba)
pp. 71 - 76

SDM2008-182
Three-Dimensional Quantum Transport Simulation of Si-Nanowire Transistors
Yoshihiro Yamada, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.)
pp. 77 - 82

SDM2008-183
First-Principles Simulation of Electronic Bandstructures on Nanoscaled-Si Channels with Strain Effects
Tadashi Maegawa, Tsuneki Yamauchi, Takeshi Hara, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.)
pp. 83 - 88

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan