IEICE Technical Report

Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2008-12-05 / Issue Date : 2008-11-28

SDM2008-184
Effects of annealing on the structures and electrical characteristics of NiO thin films for ReRAM
Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.)
pp. 1 - 4

SDM2008-185
Research for Simplifying Structures of Si X-ray Detectors (Silicon Drift Detector) and Improving Sensitivity of High-Energy X-rays
Hideharu Matsuura, Miyuki Takahashi, Kazunori Kohara, Kazuyo Yamamoto, Taketoshi Maeda, Yoshitaka Kagawa (Osaka Electro-Communication University)
pp. 5 - 10

SDM2008-186
Low-damage high-rate sputtering of silicon induced by ethanol cluster ion beam
Hiromichi Ryuto, Ryosuke Ozaki, Gikan H. Takaoka (Kyoto Univ.)
pp. 11 - 15

SDM2008-187
Si atom movement in a-Si film by soft X-ray excitation using undulator source
Yasuyuki Takanashi, Akira Heya, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo)
pp. 17 - 20

SDM2008-188
[Invited Talk] Mechanisms of Effective Work Function Modulation of Metal/Hf-based High-k Gate Stacks
Heiji Watanabe, Yuki Kita, Takuji Hosoi, Takayoshi Shimura (Osaka Univ.), Kenji Shiraishi (Univ. of Tsukuba), Yasuo Nara (SELETE), Keisaku Yamada (Waseda Univ.)
pp. 21 - 25

SDM2008-189
Electrical Properties of Bio-Nano-Dot Floating-gate MOSFETs with Ultra-thin Tunnel Oxide
Hiroyuki Irifune, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (Nara Institute ofScience and Tecnology)
pp. 27 - 30

SDM2008-190
Electrical properties of 4H-SiC MOS devices fabricated on C-face with NO direct oxidation
Yuki Oshiro, Dai Okamoto, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (Nara Institute of Science and Technology)
pp. 31 - 35

SDM2008-191
Improved Performance of an SiC MOSFET by a Three-Dimensional Gate Structure
Yuichiro Nanen, Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto (Kyoto Univ)
pp. 37 - 41

SDM2008-192
Electrical Properties of Ferroelectric Thin Films by Alcohol Rerated Materials
Masaki Yamaguchi, Tomohiro Oba (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.)
pp. 43 - 47

SDM2008-193
Change in electrical properties of SiO2/Si interface as well as Si caused by Ultraviolet light and plasma irradiations
Megumu Takiuchi, Toshiyuki Sameshima (Tokyo University of Agriculture and Technology)
pp. 49 - 54

SDM2008-194
Amorphization of Germanium by Ion Implantatin for Shallow Junction Formation
Kosei Osada, Kentaro Shibahara (Hiroshima Univ.)
pp. 55 - 58

SDM2008-195
Electrical characterization of HfO2/Ge MIS structure treated by fluorine gas
Hideto Imajo, Hyun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.)
pp. 59 - 64

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan