Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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ED2008-224
[Invited Talk]
Epitaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices
Taiichi Otsuji, Tetsuya Suemitsu, Hyon-Choru Kang, Hiromi Karasawa, Yuu Miyamoto, Hiroyuki Handa, Maki Suemitsu (Tohoku Univ.), Eiichi Sano (Hokkaido Univ.), Maxim Ryzhii, Victor Ryzhii (Univ. of Aizu)
pp. 1 - 6
ED2008-225
Magnetic properties of Mn-implanyed SOI layers
Ｙａｓｕａｋｉ Miyazaki (NTT/Keio Univ.), Yukinori Ono, Hiroyuki Kageshima, Masao Nagase, Akira Fujiwara (NTT), Eiji Ohta (Keio Univ.)
pp. 7 - 11
ED2008-226
Fabrication and application for Spin injection with Magnetite/InAs heterostructure
Takeshi Ejiri, J. Bubesh Babu, Kanji Yoh (Hokkaido Univ.)
pp. 13 - 17
ED2008-227
Structural transition of InP nanowires grown by selective-area metalorganic vapor phase epitaxy
Yusuke Kitauchi, Junichi Motohisa, Yasunori Kobayashi, Takashi Fukui (Hokkaido Univ.)
pp. 19 - 22
ED2008-228
Feild Emitter Arrays with focusing function and it's applications
Yoichiro Neo, Masafumi Takeda, Tomoya Tagami, Syun Horie, Toru Aoki, Hidenori Mimura (Shizuoka Univ.), Tomoya Yoshida, Masayoshi Nagao, Seigo Kanemaru (National Inst.of Adv Ind Scie and Tech.)
pp. 23 - 27
ED2008-229
Characteristics of Single Electron Transistor and Turnstile with Input Discretizer
Masashi Takiguchi, Shota Hayami, Masaki Otsuka, Akio Kawai, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (The Univ of Electro-Communication)
pp. 29 - 34
ED2008-230
Ultrahigh-Speed Comparator with Resonant-Tunneling Diodes
Tomohiko Ebata, Uichiro Ohmae, Kazuya Machida, Takao Waho (Sophia Univ.)
pp. 35 - 40
ED2008-231
RTD-Pair Oscillators Integrated on an AlN Ceramic Substrate
Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals Co., Ltd.,)
pp. 41 - 46
ED2008-232
Fabrication of single-Electron Transistors Using Field-Emission-Induced Electromigration
Yusuke Tomoda, Watari Kume, Michinobu Hanada, Keisuke Takahashi, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.)
pp. 47 - 52
ED2008-233
Dual-dot single-electron transistor fabricated in silicon nanowire
Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.)
pp. 53 - 58
ED2008-234
Silicon Nanowire pMOSFETs and Single-Hole Transistors at Room Temperature under Uniaxial Strain
YeonJoo Jeong, Chen Jiezhi, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo)
pp. 59 - 62
ED2008-235
Characterization and Analysis on Operation of GaAs Three-Branch Nanowire Junction Devices
Daisuke Nakata, Shaharin Fadzli Abd Rahman, Yuta Shiratori (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ/PRESTO,JST)
pp. 63 - 68
ED2008-236
The fourth passive circuit element relating magnetic flux to charge
Yoshihito Amemiya, Yasuo Takahashi (Hokkaido Univ.)
pp. 69 - 74
ED2008-237
Observation of Stochastic Resonance in Nanodevice-integrated Systems Utilizing GaAs-based Nanowire Network and Its Analysis
Seiya Kasai (Hokkaido Univ/JST), Tetsuya Asai, Yuta Shiratori, Hong-Quan Zhao (Hokkaido Univ.)
pp. 75 - 79
ED2008-238
Thermoelectric characteristics of Si nanostructures for a high-efficiency thermoelectric device
Hiroya Ikeda, Faiz Salleh, Kiyosumi Asai, Akihiro Ishida (Shizuoka Univ.)
pp. 81 - 85
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.