Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2009-135
[Invited Talk]
Compact MOSFET Model and Its Perspective
-- from bulk-MOSFET to MG-MOSFET --
Mitiko Miura-Mattausch, Masataka Miyake, Koh Johguchi, Shunta Kusu, Kenta Ishimura, Hideyuki Kikuchihara, Feldmann Uwe, Mattausch Hans Juergen (Hiroshima Univ.)
pp. 1 - 6
SDM2009-136
[Invited Talk]
2009 SISPAD Review
Katsuhiko Tanaka (MIRAI-Selete)
pp. 7 - 11
SDM2009-137
[Invited Talk]
Report on 2009 SISPAD (2)
Matsuto Ogawa (Kobe Univ.)
pp. 13 - 17
SDM2009-138
Surface-Potential-Based Drain Current Model for Thin-Film Transistors
Hiroshi Tsuji (Osaka Univ/JST), Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.)
pp. 19 - 22
SDM2009-139
HiSIM-IGBT: A Compact IGBT Model for Circuit Simulation
Masataka Miyake, Hiroki Masuoka, Uwe Feldmann, Mitiko Miura-Mattausch (Hiroshima Univ.)
pp. 23 - 27
SDM2009-140
Development of MEMS and Equivalent Circuit Generator
Nobuyo Fujiwara, Kazuo Asaumi (Mizuho Information & Research Institute), Tomoyuki Koike (Micromachine Center), Toshiyuki Tsuchiya (Kyoto Univ,), Gen Hashiguchi (Shizuoka Univ.)
pp. 29 - 32
SDM2009-141
Device Modeling and Simulation for CMOS Biosensor Applications
Shigeyasu Uno, Kazuo Nakazato (Nagoya Univ.)
pp. 33 - 37
SDM2009-142
Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Transistors
Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Kenji Taniguchi (Osaka Univ.)
pp. 39 - 44
SDM2009-143
R-matrix method for quantum transport simulation in atomistic modeling
Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura (Osaka Univ./JST)
pp. 45 - 48
SDM2009-144
Carrier Transport Analysis of Strained SiGe/Si-pMOSFETs using Full-band Device Simulation
Hiroshi Takeda (NEC Electronics Corp.), Michihito Kawada (NEC Informatec Systems), Kiyoshi Takeuchi, Masami Hane (NEC Electronics Corp.)
pp. 49 - 53
SDM2009-145
A Novel Monte Carlo Simulation to Evaluate the Size Effect of Resistivity for Scaled Metallic Interconnects
Takashi Kurusu, Makoto Wada, Noriaki Matsunaga, Akihiro Kajita, Hiroyoshi Tanimoto, Nobutoshi Aoki, Yoshiaki Toyoshima, Hideki Shibata (Toshiba Corp.)
pp. 55 - 60
SDM2009-146
[Tutorial Invited Lecture]
Possible Performance of SOI Devices, their Potentiality and Prospects
-- Past Constraint and Current Issues --
Yasuhisa Omura (Kansai Univ.)
pp. 61 - 66
SDM2009-147
[Invited Talk]
Random Fluctuations in Scaled MOS Devices
Kiyoshi Takeuchi (MIRAI-Selete/NEC Corp.), Akio Nishida (MIRAI-Selete), Toshiro Hiramoto (MIRAI-Selete/Univ. of Tokyo.)
pp. 67 - 71
SDM2009-148
A Discrete Surface Potential Model which Accurately Reflects Channel Doping Profile and its Application to Ultra-Fast Analysis of Random Dopant Fluctuation
Hironori Sakamoto, Hiroshi Arimoto, Hiroo Masuda, Satoshi Funayama, Shigetaka Kumashiro (MIRAI-Selete)
pp. 73 - 78
SDM2009-149
Atomic Scale Analysis of the Degradation Mechanism of the Integrity High-k/Metal-gate Interface Caused by the Interaction between Point-Defects and Residual Strain around the Interface
Ken Suzuki, Yuta Itoh, Tatsuya Inoue, Hideo Miura (Tohoku Univ.), Hideki Yoshikawa, Keisuke Kobayashi (National Inst. for Materials Science), Seiji Samukawa (Tohoku Univ.)
pp. 79 - 84
SDM2009-150
Trial application of tight-binding method to Si-cluster surrounded by SiO2 in optimized atomistic network
Kenji Kawabata, Takashi Ichikawa, Hiroshi Watanabe (Toshiba Corp.)
pp. 85 - 90
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.