IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 110, Number 15

Silicon Device and Materials

Workshop Date : 2010-04-23 / Issue Date : 2010-04-16

[PREV] [NEXT]

[TOP] | [2007] | [2008] | [2009] | [2010] | [2011] | [2012] | [2013] | [Japanese] / [English]

[PROGRAM] [BULK PDF DOWNLOAD]


Table of contents

SDM2010-1
[Invited Talk] High Performance Nano System Fabricated by Bio Nano Molecule -- Low Temperature Crystallization of Silicon Thin Film --
Yukiharu Uraoka, Ichiro Yamashita (NAIST)
pp. 1 - 4

SDM2010-2
Laser-activated Top-gate μc-Si:H TFTs
Akito Hara, Jun Shibuya, Tadashi Sato (Tohoku Gakuin Univ.), Kuninori Kitahara (Shimane Univ.)
pp. 5 - 8

SDM2010-3
Film property and carrier transport mechanism of pentacene organic thin-film transistor
Akira Heya, Hiroshi Hasegawa, Naoto Matsuo (Univ.Hyogo)
pp. 9 - 12

SDM2010-4
Al-Induced Crystallization of SiGe thin-films on glass and its growth mechanism
Naoyuki Kawabata (Kyushu Univ.), Masashi Kurosawa (Kyushu Univ./JSPS Research Fellow), Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.)
pp. 13 - 17

SDM2010-5
Simulation of dependency of photo current on intrinsic length in a-Si and c-Si thin film PIN photo sensor
Akinori Sakamoto, Takashi Noguchi (University of the Ryukyus), Tadashi Ohachi (Doushisha University), Fumiaki Oshiro, Jean de Dieu Mugiraneza (University of the Ryukyus)
pp. 19 - 22

SDM2010-6
[Invited Talk] Sputter-deposition of Si films and fabrication of polycrystalline Si thin film transistors
Tadashi Serikawa (Osaka Univ.)
pp. 23 - 28

SDM2010-7
Influence of Grain Size on Gate Voltage Swing and Threshold Voltage of Poly-Si Thin Film Transistor
Fumiaki Oshiro, Akinori Sakamoto, Takashi Noguchi (Univ. of Ryukyus), Tadashi Ohachi (Doshisha Univ.)
pp. 29 - 32

SDM2010-8
Characterization of Sputtered-Si Films for Photo-Sensor Diodes
Jean de Dieu Mugiraneza, Tomoyuki Miyahira, Akinori Sakamoto, Takashi Noguchi (Univ. of Ryukyus), Ching-Ping Chiu, Meng-Hsin Chen, Wen-Chang Yeh (NTUST)
pp. 33 - 37

SDM2010-9
[Invited Talk] Microsecond Melting and Crystallization of Silicon Films Induced by Atmospheric Pressure Thermal Plasma Jet Irradiation and Its Application to Thin Film Transistor Fabrication
Seiichiro Higashi (Hiroshima Univ.)
pp. 39 - 44

SDM2010-10
Effect of hydrogen on growth of disk-shaped crystal grain in poly-Si film prepared by excimer laser annealing
Akira Heya, Kazufumi Yamada (Univ. Hyogo), Naoya Kawamoto (Yamaguchi Univ.), Naoto Matsuo (Univ. Hyogo)
pp. 45 - 48

SDM2010-11
Crystal Orientation Dependent Growth Features of Ge-on-Insulator by SiGe Mixing Triggered Melting Process
Yasuharu Ohta, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.)
pp. 49 - 52

SDM2010-12
Formation of Defect-Free Ge Island on Insulator by Ni-Imprint Induced Si Micro-Seeding Rapid Melting
Takashi Sakane, Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.)
pp. 53 - 57

SDM2010-13
[Invited Talk] Optical measurements for invetigating carrier dynamics in the organic thin-film transistors
Takaaki Manaka, Mitsumasa Iwamoto (Tokyo Tech.)
pp. 59 - 64

SDM2010-14
In Situ Observation of Adsorption Process and Functionality of Proteins on Solid/Liquid Interfaces by Time-resolved Slab Optical Waveguide Spectroscopy
Naoki Matsuda, Hirotaka Okabe (AIST)
pp. 65 - 66

SDM2010-15
Single-walled Carbon Nanotube Thin Film Transistor Made by Using Solution Process
Xun Yi, Hiroaki Ozawa, Gou Nakagawa, Tsuyohiko Fujigaya, Naotoshi Nakashima, Tanemasa Asano (Kyushu Univ.)
pp. 67 - 70

SDM2010-16
Fabrication and characterization of IGZO-channel ferroelectric-gate TFTs with P(VDF-TrFE) film
Gwang-Geun Lee (Tokyo Inst. of Tech.), Sung-Min Yoon (ETRI), Joo-Won Yoon (Tokyo Inst. of Tech.), Yoshihisa Fujisaki (Hitachi), Hiroshi Ishiwara, Eisuke Tokumitsu (Tokyo Inst. of Tech.)
pp. 71 - 75

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan