IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 110, Number 30

Component Parts and Materials

Workshop Date : 2010-05-13 - 2010-05-14 / Issue Date : 2010-05-06

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Table of contents

CPM2010-7
Measurement of Electron Traps in n-GaN on Si (111) Substrates by Deep-Level Transient Spectroscopy
Arata Watanabe, Takashi Egawa (Nagoya Inst. of Tech.)
pp. 1 - 4

CPM2010-8
Improved p-InGaN/AlGaN/GaN normally-off HEMTs on silicon substrates
Kazuhiro Nagai, Lawrence Selvaraj, Takashi Egawa (Nagoya Inst. of Tech.)
pp. 5 - 9

CPM2010-9
Study of Light Emitting Device Based-on AlGaN/GaN:Eu HEMT structure
Masaki Kondo, Takayuki Hata, Hiroshi Okada, Akihiro Wakahara, Yuzo Furukawa (Toyohashi Univ. of Tech.), Shin-ichiro Sato, Takeshi Ohshima (JAEA)
pp. 11 - 16

CPM2010-10
Theoretical study on novel Si single-electron refrigerator
Hiroya Ikeda, Faiz Salleh (Shizuoka Univ.)
pp. 17 - 21

CPM2010-11
Charging phenomena of a single electron in P-doped Si SOI-MOSFETs
Earfan Hamid, Juli ChaTarido, Sakito Miki, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.)
pp. 23 - 26

CPM2010-12
Single Photon Detection in Single Dot and Multi Dot Channel Phosphorus-Doped SOI-FET
Arief Udhiarto, Daniel Moraru, Ryusuke Nakamura, Sakito Miki, Takeshi Mizuno, Michiharu Tabe (Shiuzoka Univ.)
pp. 27 - 31

CPM2010-13
Effect of Gravity on the Growth of Alloy Semiconductors Bulk Crystals
Yasuhiro Hayakawa, Mukannan Arivanandhan, Govindasamy Rajesh, Tadanobu Koyama, Yoshimi Momose, Hisashi Morii, Toru Aoki, Akira Tanaka, Yasunori Okano (Shizuoka Univ.), Tetsuo Ozawa (Shizuoka Inst. of Sci.&Tech.), Yuko Inatomi (JAXA)
pp. 33 - 38

CPM2010-14
Effect of Temperature on the Formation of ZnS Nanostructures and Properties
Mani Navaneethan (Shizuoka Univ.), Jayaram Archana, K. D. Nisha (SMR Univ), Mukannan Arivanandhan (Shizuoka Univ.), Suruttaiyaudaiyar Ponnusamy, Chellamuthu Muthamizhchelvan (SMR Univ), Yasuhiro Hayakawa (Shizuoka Univ.)
pp. 39 - 43

CPM2010-15
A step-annealing effect on SrS:Cu films for blue EL elements
Masaaki Isai, Suguru Kato (Shizuoka Univ.)
pp. 45 - 49

CPM2010-16
Investigation of deposition condition of LiMn2O4 films prepared by RF magnetron sputtering
Mitsuhiro Nakamura, Masaaki Isai (Shizuoka Univ.)
pp. 51 - 55

CPM2010-17
Preparation and evaluation of Ga2O3 oxygen sensors
Shinya Kayano, Naoya Yamaguchi, Masaaki Isai (Shizuoka Univ.)
pp. 57 - 60

CPM2010-18
Preparation of Pt-deposited TiO2 films and evaluation of photocatalystic properties
Ikuta Nakamura, Tatsuya Ito, Masaaki Isai (Shizuoka Univ.), Yoichi Hoshi (Tokyo Polytechnic Univ.)
pp. 61 - 64

CPM2010-19
Study of Large Area CdTe X-ray and γ-ray Imaging Detectors Grown by MOVPE -- Study of growth condition for high quality CdTe/Si layer --
Tatsuhiko Goto, Kitau Egawa, Hirohisa Ogawa, Hisato Doyoshita, Hiroyuki Fukuta, Hiroaki Inuzuka, Tadahiro Tachi, Naoya Fujimura, Yasunori Agata, Madan Niraula, Kazuhito Yasuda (Nagoya Inst. Of Tech.)
pp. 65 - 68

CPM2010-20
Intelligent UV sensor composed of GaN-based photodiode and Si-charge transfer type signal processor
ChangYong Lee, Fumiya Matsuno, Yoshinori Hashimoto, Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. of Tech.)
pp. 69 - 73

CPM2010-21
Surface morphology at initial growth stage of GaP grown on Si substrates using metalorganic vapor phase epitaxy
Yasushi Takano, Hiroki Yamada, Ryu Misaki, Tatsuya Takagi, Shunro Fuke (Shizuoka Univ.)
pp. 75 - 79

CPM2010-22
Fabrication of 1-bit counter circuit with LED indicator using Si/III-V-N/Si structure
Seizo Tanaka, Kenta Noguchi, Keisuke Yamane, Yuki Deguchi, Yuzo Furukawa, Hiroshi Okada, Akihiro Wakahara, Hiroo Yonezu (Toyohashi Univ. of Tech.)
pp. 81 - 85

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan