IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 112, Number 337

Silicon Device and Materials

Workshop Date : 2012-12-07 / Issue Date : 2012-11-30

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Table of contents

SDM2012-115
Fabrication of ultrahigh-voltage SiC PiN diodes with low-on resistance
Naoki Kaji, Hiroki Niwa, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
pp. 1 - 5

SDM2012-116
Plasmaless etching of silicon carbide using chlorine based gas
Tomoaki Hatayama, Ryouta Hori, Tetsuya Tamura, Hiroshi Yano, Takashi Fuyuki (NAIST)
pp. 7 - 12

SDM2012-117
Change of Scattering Mechanisms of Holes in SiC by Electron Irradiation
Kohji Murata, Tatsuya Morine, Hideharu Matsuura (Osaka Electro-Communication Univ), Shinobu Onoda, Takeshi Ohshima (JAEA)
pp. 13 - 18

SDM2012-118
Effects of phosphorus incorporation into SiO2/SiC interface on electrical properties of MOS capacitors fabricated on 4H-SiC(11-20)
Nao Umezawa, Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST)
pp. 19 - 23

SDM2012-119
Surface Modification of Glass Substrate by Ion Beam Irradiation of Ionic Liquid BMIM-PF6
Mitsuaki Takeuchi, Takuya Hamaguchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.)
pp. 25 - 30

SDM2012-120
Molecular mass dependence of irradiation effects on silicon surface by normal hydrocarbon ion beams
Kosuke Imanaka, Mitsuaki Takeuchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.)
pp. 31 - 35

SDM2012-121
Study of carrier behavior in memory transistor using DNA
Shoko Maeno, Naoto Matsuo, Kazushige Yamana, Akira Heya, Tadao Takada (Univ. of Hyogo)
pp. 37 - 40

SDM2012-122
Delivery process of gold nanoparticles using protein and its plasmon characteristics
Satoshi Saijo, Yasuaki Ishikawa, Bin Zheng, Ichiro Yamashita, Yukiharu Uraoka (NAIST)
pp. 41 - 45

SDM2012-123
Neural Network using Thin-Film Transistors -- Working Confirmation of Asymmetric Circuit --
Mutsumi Kimura, Yuki Yamaguchi, Ryohei Morita, Yusuke Fujita, Tomoaki Miyatani, Tomohiro Kasakawa (Ryukoku Univ.)
pp. 47 - 52

SDM2012-124
Retinal Prosthesis of Frequency Modulation using Thin Film Photo Transistors
Takayuki Kadonome, Atsushi Matsumura, Tsuyoshi Higashiyama, Shohei Oyama, Mutsumi Kimura (Ryukoku Univ.)
pp. 53 - 57

SDM2012-125
Theoretical Analysis of Degradation Phenomena in a-Oxide TFT by Device Simulation
Satoshi Urakawa, Yoshihiro Ueoka, Haruka Yamazaki, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
pp. 59 - 64

SDM2012-126
Design for inexpensive Detector (Silicon Drift Detector)
Ryota Okada, Kazuki Matsutani, Hideharu Matsuura (Osaka Electro-Communication Univ.)
pp. 65 - 70

SDM2012-127
Depth analysis of ultra-shallow junctions by photoluminescence with the aid of nano-scale wet etching
Gota Murai, Masashi Okutani, Syuji Tagawa, Masahiro Yoshimoto (Kyoto Inst. Tech.), Woo Sik Yoo (WaferMasters)
pp. 71 - 76

SDM2012-128
Photovoltaic characteristics of depth controled the emitter layer and selective emitter layer formed by laser doping
Shigeaki Tanaka, Hideki Nishimura, Takashi Fuyuki (NAIST)
pp. 77 - 81

SDM2012-129
Improvement of the electronic states by controlling the interface between dopant and substrate in laser doping for textured silicon
Hideki Nishimura, Shigeaki Tanaka, Shota Morisaki, Shingo Yumoto, Takashi Fuyuki (NAIST)
pp. 83 - 87

SDM2012-130
Fabrication of N-type Silicon Solar Cells by Laser Doping Method for High Efficiency
Shota Morisaki, Hideki Nishimura, Emi Sugimura, Takashi Fuyuki (NAIST)
pp. 89 - 93

SDM2012-131
Optimization of a crystalline silicon solar cell which has the high concentration impurities layer under an electrode formed by continuous wave laser.
Shingo Yumoto, Hideki Nishimura, Kenji Hirata, Emi Sugimura, Takashi Fuyuki (NAIST)
pp. 95 - 99

SDM2012-132
Improvement of conversion efficiency for solar cell with MOS structure.
Takahiro Kobayashi, Naoto Matsuo, Akira Heya (Univ. of Hyogo)
pp. 101 - 105

SDM2012-133
Electric Characteristic of Crystalline Silicon Solar Cells using Electroluminescence Imaging under Reverse-based
Emi Sugimura, Shigekazu Shimazaki, Ayumi Tani, Takashi Fuyuki (NAIST)
pp. 107 - 111

SDM2012-134
Fabrication of Ferroelectric Microstructures by Proton Beam Irradiation
Masaki Yamaguchi, Kazuki Watanabe (Shibaura Inst. of Tech.), Yoichiro Masuda (Hachinohe Inst. of Tech.)
pp. 113 - 117

SDM2012-135
Correlation between parameters related to reset speed in HfO2 Conducting-Bridge memory
Shigeyuki Tsuruta, Kentaro Kinoshita, Sho Hasegawa, Yutaro Enomoto, Satoru Kishida (Tottori Univ.)
pp. 119 - 122

SDM2012-136
Memory characteristics of ReRAM filament confined in localized area.
Sang-gyu Koh, Kentaro Kinoshita, Takahiro Fukuhara, Yusuke Sawai, Satoru Kishida (Tottori Univ.)
pp. 123 - 127

SDM2012-137
Effects of electrode materials on resistive switching characteristics of Metal/TiO2/Metal stack structures
Naoki Okimoto, Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ,)
pp. 129 - 132

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan