Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2014-84
[Invited Talk]
Performance improvement and present status of IGBT
Tomohide Terashima (Mitsubishi Electric Corp.)
pp. 1 - 6
SDM2014-85
Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology
Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.), Yuki Kumagai, Yutaka Kamata, Katsuhiko Shibusawa (LAPIS Semiconductor Miyagi)
pp. 7 - 12
SDM2014-86
A study on Si surface flattening process utilizing atmospheric annealing system
Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech)
pp. 13 - 17
SDM2014-87
Electrical characteristics of as-deposited HfN gate insulator formed by ECR plasma sputtering
Nithi Atthi, Shun-ichiro Ohmi (TokyoTech)
pp. 19 - 22
SDM2014-88
[Invited Talk]
Ion Implantation Technologies for Image Sensing Devices
Yoji Kawasaki, Genshu Fuse, Makoto Sano, Emi Ooga, Masazumi Koike, Kazuhiro Watanabe, Michiro Sugitani (SEN Corp.)
pp. 23 - 30
SDM2014-89
Study on compositional transition layers at Si3N4/Si interface formed by radical nitridation
Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 31 - 34
SDM2014-90
Initial stage of oxidation on 4H-SiC by AR-XPS using angle-resolved X-ray photoelectron spectroscopy
Tomoya Sasago, Shunta Yamahori, Hiroshi Nohira (Tokyo City Univ.)
pp. 35 - 39
SDM2014-91
Epitaxial Growth of Ge and Ge1-xSnx Films by MOCVD
Kohei Suda, Seiya Ishihara, Takahiro Kijima, Naomi Sawamoto (Meiji Univ.), Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh (Gas-phase Growth), Yoshio Oshita (Toyota Technological Inst.), Atsushi Ogura (Meiji Univ.)
pp. 41 - 45
SDM2014-92
[Invited Talk]
Analysis of Multi-Trap Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETs
Toshiaki Tsuchiya (Shimane Univ.)
pp. 47 - 54
SDM2014-93
Analysis of trap density causing random telegraph noise in MOSFETs
Toshiki Obara, Akinobu Teramoto, Rihito Kuroda, Akihiro Yonezawa, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 55 - 59
SDM2014-94
[Invited Talk]
Back-Bias Control technique for Suppression of Die-to-Die Delay Variability of SOTB MOS Circuits at Ultralow-Voltage (0.4 V) Operation
Hideki Makiyama, Yoshiki Yamamoto, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Yasuo Yamaguchi (LEAP), Koichiro Ishibashi (Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (Univ. of Tokyo)
pp. 61 - 68
SDM2014-95
Design method of stacked type NAND MRAM
Shigeyoshi Watanabe (Shonan Inst. of Tech), Shoto Tamai (Oi Electric Co. LTD.)
pp. 69 - 74
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.