IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 116, Number 268

Electron Device

Workshop Date : 2016-10-25 - 2016-10-26 / Issue Date : 2016-10-18

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Table of contents

ED2016-43
I-V characteristics of W-FE covered with Thorium
Yamanashi Ryotaro, Yoichiro Neo (Shizuoka Univ.), Teruaki Ohno (Technex), Hidenori Mimura (Shizuoka Univ.)
pp. 1 - 4

ED2016-44
Operational Characteristics and Analysis of Field Emitter Arrays under X-ray Irradiation
Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.), Masayoshi Nagao (AIST), Masafumi Akiyoshi (Osaka Pref. Univ.), Ikuji Takagi (Kyoto Univ.)
pp. 5 - 8

ED2016-45
Development Activity of Vacuum Electronics in THz Band
Mitsuru Yoshida, Junichi Kobayashi, Yusuke Fujishita, Norio Masuda (NETS), Norihiko Sekine, Atsushi Kanno, Naokatsu Yamamoto, Akifumi Kasamatsu, Iwao Hosako (NICT)
pp. 9 - 12

ED2016-46
Study on the photoresponse of silicon field emitter arrays (II)
Hidetaka Shimawaki (HIT), Masayoshi Nagao (AIST), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.)
pp. 13 - 15

ED2016-47
Stabilization of spin polarization of field emitted electrons using interlayer antiferromagnetic Cr (001) surface
Kento Miyazaki, Naoya Sakai (Mie Univ), Shigekazu Nagai, Tatsuo Iwata, Kazuo Kajiwara, Koichi Hata (Mie Univ/ Mie CUTE)
pp. 17 - 20

ED2016-48
Ab initio calculations of field emission from carbon emitters on the basis of time-dependent density functional theory (II)
Toshiharu Higuchi, Masahiro Sasaki, Yoichi Yamada (Univ. of Tsukuba)
pp. 21 - 26

ED2016-49
Diagnosis for electron beam pulse from NEA-GaAs PhotoCathode
Ryo Yoshitake, Keigo Mitsuno, Tomoaki Masuzawa, Yoshinori Hatanaka, Makoto Hosoda, Yoichiro Neo, Hidenori Mimura (Shizuoka Univ)
pp. 27 - 30

ED2016-50
Fabrication of Vacuum Nanoelectronics Devices using Minimal Fab System
Masayoshi Nagao, Katsuhisa Murakami, Noriyuki Tatsumi, Sommawan Khumpuang, Shiro Hara (AIST), Yasuhito Gotoh (Kyoto Univ.)
pp. 31 - 36

ED2016-51
A planer-type electron emission device using graphene gate electrode
Katsuhisa Murakami (AIST), Shunsuke Tanaka (Univ. Tsukuba), Masayoshi Nagao (AIST), Yoshihiro Nemoto, Masaki Takeguchi (NIMS), Jun-ichi Fujita (Univ. Tsukuba)
pp. 37 - 40

ED2016-52
Electron Emission from W(100) Surface modified by Group 3 Elements -- Work Function Reduction by Sc Oxide, Pr Oxide and Nd Oxide --
Takashi Kawakubo (NIT Kagawa), Hideaki Nakane (Muroran Inst. of Tech.)
pp. 41 - 46

ED2016-53
Fabrication of nano-emitter use of palladium dioxide dispersed in collodion
Hirotaka Asai, Shigeki Kumagai, Hidekazu Murata, Eiji Rokuta (Meijo Univ.)
pp. 47 - 50

ED2016-54
A verification of formation process of emitters with nano-protrusion fabricated by the field-induced oxygen etching
Minoru Wakamoto, Shigekazu Nagai, Tatsuo Iwata, Kazuo Kajiwara, Koichi Hata (MIe Univ.)
pp. 51 - 56

ED2016-55
Trials to Clarify the Mechanism of Low Field Emission from Carbon-related Materials -- Through Field Emission from Vacuum Arc-Prepared Carbon Films and C60 --
Masahiro Sasaki, Yoichi Yamada, Toshiharu Higuchi, Ken Asanagi, Manabu Adachi, Yuji Nishiyama, Takuma Mojin (U. of Tsukuba)
pp. 57 - 62

ED2016-56
Radiation tolerance of CdTe/CdS photoconductive target
Tomoaki Masuzawa, Yoichiro Neo (Shizuoka Univ.), Yasuhito Gotoh (Kyoto Univ.), Tamotsu Okamoto (National Inst. of Technol. Kisarazu College), Masayoshi Nagao (AIST), Nobuhiro Sato (Kyoto Univ.), Masafumi Akiyoshi (Osaka Prefecture Univ.), Ikuji Takagi (Kyoto Univ.), Hidenori Mimura (Shizuoka Univ.)
pp. 63 - 66

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan