IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 117, Number 101

Silicon Device and Materials

Workshop Date : 2017-06-20 / Issue Date : 2017-06-13

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Table of contents

SDM2017-21
[Invited Lecture] Scintillators and Ga2O3 Semiconductors
Go Okada, Yuki Usui, Naoki Kawano, Noriaki Kawaguchi, Takayuki Yanagida (NAIST)
pp. 1 - 4

SDM2017-22
[Invited Lecture] Development of Quantum Imaging Detector using SOI Technology -- Looking Elementary Particles and X-rays with Semiconductor --
Yasuo Arai (KEK)
pp. 5 - 8

SDM2017-23
[Invited Lecture] Studies on semiconducting gas sensors with WO3 nanoparticles for skin-emitted acetone detection
Yuki Yamada, Satoshi Hiyama (NTT DOCOMO), Hitoshi Tabata (Univ. of Tokyo)
pp. 9 - 13

SDM2017-24
[Invited Lecture] Sensing technologies using nitrogen-vacancy centers in diamond
Takayuki Iwasaki, Mutsuko Hatano (Tokyo Inst. of Tech.)
pp. 15 - 18

SDM2017-25
Direct Observation of Chemical Structure and Electrical Dipole at High-k/SiO2 Interface Using by XPS Measurements
Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)
pp. 19 - 23

SDM2017-26
Resistive Switching Properties of Si Oxide by Constant Voltage and Constant Current Application
Akio Ohta, Yusuke Kato, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)
pp. 25 - 29

SDM2017-27
Capacitance Analyses of p-ch GaN MOS Structure on Polarization ― Junction Substrate
Rumi Takayama, Takuya Hoshii (Tokyo Inst. of Tech.), Akira Nakajima (AIST), Shinichi Nishizawa (Kyushu Univ.), Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui (Tokyo Inst. of Tech.)
pp. 31 - 34

SDM2017-28
Heavily-doped SOI Substrate and Transfer Printing for Fabrication of TMDC FETs
Takamasa Kawanago, Ryo Ikoma, Hiroyuki Takagi, Shunri Oda (Tokyo Inst. of Tech.)
pp. 35 - 38

SDM2017-29
Characterization of defects in Ge1-xSnx gate stack structure
Yuichi Kaneda, Shinnichi ike, Masayuki Kanematsu, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
pp. 39 - 42

SDM2017-30
Formation of Ultrathin Crystalline Structure of Group-IV Elements on Epitaxial Ag(111) Surface
Koichi Ito, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)
pp. 43 - 48

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan