Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2018-81
[Invited Talk]
Multidomain Dynamics of Ferroelectric Polarization in Negative Capacitance State and its Impacts on Performances of Field-Effect Transistors
Hiroyuki Ota, Tsutomu Ikegami, Koichi Fukuda, Junichi HattoriI, Hidehiro Asai, Kazuhiko Endo, Shinji Migita (AIST), Akira Toriumi (The Univ. of Tokyo)
pp. 1 - 4
SDM2018-82
[Invited Talk]
Assessment of Steep-Subthreshold Swing Behaviors in Ferroelectric Field-Effect Transistors
Shinji Migita, Hiroyuki Ota (AIST), Akira Thorium (U. Tokyo)
pp. 5 - 8
SDM2018-83
[Invited Talk]
Direct relationship between sub-60 mV/dec subthreshold swing and internal potential instability in MOSFET externally connected to ferroelectric capacitor
Li Xiuyan, Akira Toriumi (Univ. of Tokyo)
pp. 9 - 12
SDM2018-84
[Invited Talk]
The Relationship between Polarization Switching and Subthreshold Behavior in HfO2-based Ferroelectric and Anti-ferroelectric FET: An Experimental Study
Chengji Jin, Kyungmin Jang, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo)
pp. 13 - 16
SDM2018-85
[Invited Talk]
Simulation study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method with Self-consistent Potential
Fei Mo, Yusaku Tagawa, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo)
pp. 17 - 20
SDM2018-86
[Invited Talk]
Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique
Tadashi Yamaguchi, Tiantian Zhang, Kazuyuki Omori, Yasuhiro Shimada, Yorinobu Kunimune, Takashi Ide, Masao Inoue, Masazumi Matsuura (Renesas)
pp. 21 - 26
SDM2018-87
[Invited Talk]
Interface Dipole Modulation Memory based on Multi-stacked HfO2/SiO2 MOS Structure
Noriyuki Miyata (AIST), Jun Nara, Takahiro Yamasaki (NIMS), Kyoko Sumita (AIST), Ryousuke Sano, Hiroshi Nohira (TCU)
pp. 27 - 30
SDM2018-88
[Invited Talk]
Half pitch 14 nm direct pattering with Nanoimprint lithography
Tetsuro Nakasugi (Toshiba Memory Corp.)
pp. 31 - 34
SDM2018-89
[Invited Talk]
Silicon Isotope Technology for Quantum Computing
Satoru Miyamoto (Keio Univ.), Usami Noritaka (Nagoya Univ.), Kohei M. Itoh (Keio Univ.)
pp. 35 - 38
SDM2018-90
[Invited Talk]
Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss
Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (GRIK), Yohichiroh Numasawa (Meiji Univ.), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai, Wataru Saito (Toshiba Electronic Devices & Storage), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Tech), Toshiro Hiramoto (Univ. of Tokyo)
pp. 39 - 44
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.