IEICE Technical Report

Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2019-06-21 / Issue Date : 2019-06-14

SDM2019-25
Depth Profiling of Nitrogen Atoms in No-annealed SiO2/4H-SiC Structures
Takuji Hosoi, Kidist Moges (Osaka Univ.), Mitsuru Sometani (AIST), Takayoshi Shimura (Osaka Univ.), Shinsuke Harada (AIST), Heiji Watanabe (Osaka Univ.)
pp. 1 - 4

SDM2019-26
Ultra-low resistance contact for n-type Ge1-xSnx with in-situ Sb heavily doping and nickel stanogermanide formation
Jihee Jeon, Akihiro Suzuki, Shigehisa Shibayama, Shigeaki Zaima, Osamu Nakatsuka (Nagoya Univ.)
pp. 5 - 9

SDM2019-27
Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing
Masato Kobayashi, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)
pp. 11 - 15

SDM2019-28
Mechanism of strain relaxation enhancement by ion implantation method for group-IV semiconductor alloy thin film
Hidetaka Sofue, Masahiro Fukuda, Shigehisa Shibayama (Nagoya Univ.), Shigeaki Zaima (Meijo Univ.), Osamu Nakatsuka, (Nagoya Univ.)
pp. 17 - 20

SDM2019-29
[Invited Lecture] Necessity of 2D/3D nano metrology from the point of semiconductor devices
Koji Usuda (Toshiba Memory Co.)
p. 21

SDM2019-30
[Invited Lecture] Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method
Kazuo Tsutsui (Tokyo Tech), Tomohiro Matsushita (JASRI), Kotaro Natori, Tatsuhiro Ogawa (Tokyo Tech), Takayuki Muro (JASRI), Yoshitada Morikawa (Osaka Univ.), Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi (Tokyo Tech), Kouichi Hayashi (Nagoya Inst. Tech.), Fumihiko Matsui (Inst. Molecular Science), Toyohiko Kinoshita (JASRI)
pp. 23 - 27

SDM2019-31
[Invited Lecture] Three-Dimensional Structural Observation for Nanoscale Devices and Crystal defects
Kazuhiko Omote, Yoshiyasu Ito (Rigaku)
pp. 29 - 33

SDM2019-32
New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching
Takeaki Yajima (Univ. of Tokyo), Yusuke Samata, Tomonori Nishimura, Akira Toriumi (JST)
pp. 35 - 38

SDM2019-33
First principle simulation about phase change of superlattice GeTe/Sb2Te3
Yutaro Ogawa, Hiroaki Nohara, Hiroki Shirakawa, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.)
pp. 39 - 42

SDM2019-34
Evaluation of Interface Characteristics in GaN-MOS Capacitors with Boron-doped Al2O3 Gate Insulators
Manato Deki, Shin Okude, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.)
pp. 43 - 46

SDM2019-35
Chemical Structure and Electronic States of HfSiOx/GaN(0001)
Akio Ohta, Katunori Makihara (Nagoya Univ.), Toshihide Nabatame (NIMS), Koji Shiozaki, Seiichi Miyazaki (Nagoya Univ.)
pp. 47 - 51

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan