Online edition: ISSN 2432-6380
[TOP] | [2017] | [2018] | [2019] | [2020] | [2021] | [2022] | [2023] | [Japanese] / [English]
SDM2020-22
[Invited Talk]
SISPAD2020 Review
Saotumi Souma (Kobe Univ)
pp. 1 - 4
SDM2020-23
[Invited Talk]
Interfacial Dipole in the High-k Gate Stack Reproduced by Classical Molecular Dynamics
Takanobu Watanabe (Waseda Univ.)
pp. 5 - 10
SDM2020-24
[Invited Talk]
Toward unification of large-scale first-principles calculations and device/process simulators
Atsushi Oshiyama (Nagoya Univ.)
pp. 11 - 14
SDM2020-25
[Invited Talk]
Prediction model of dielectric constants of perovskite-type oxides by first-principles calculations and materials informatics
Yusuke Noda (Kanazawa Gakuin Univ.)
pp. 15 - 20
SDM2020-26
[Invited Talk]
A technique for phase-detection auto focus under near-infrared-ray incidence in a back-side illuminated CMOS image sensor pixel
Tatsuya Kunikiyo, Hidenori Sato, Takeshi Kamino, Koji Iizuka, Ken'ichiro Sonoda, Tomohiro Yamashita (Renesas Electronics)
pp. 21 - 24
SDM2020-27
A model of dark current mechanism in barrier infrared photodetectors
Yen Le Thi (Hanoi University of Science and Technology), Yoshinari Kamakura (Osaka Institute of Technology), Nobuya Mori (Graduate School of Engineering, Osaka University,)
pp. 25 - 27
SDM2020-28
Estimation of Phonon Mean Free Path in Thin Si Wire by Monte Carlo Simulation
Yuhei Suzuki, Yuma Fujita (OIT), Khotimatul Fauziah, Takuto Nogita, Hiroya Ikeda (Shizuoka Univ.), Takanobu Watanabe (Waseda Univ.), Yoshinari Kamakura (OIT)
pp. 28 - 31
SDM2020-29
[Invited Talk]
Power Device Degradation Estimation by Machine Learning of Gate Waveforms
Hiromu Yamasaki, Koutaro Miyazaki, Yang Lo, A. K. M. Mahfuzul Islam, Katsuhiro Hata, Takayasu Sakurai, Makoto Takamiya (Univ. of Tokyo)
pp. 32 - 35
SDM2020-30
[Invited Talk]
Three-dimensional device simulation of Si IGBTs
-- Investigation of physical models and comparisons with measurements --
Naoyuki Shigyo, Masahiro Watanabe, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa (Tokyo Tech), Akira Nakajima (AIST), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai (Toshiba), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The Univ. of Tokyo), Hitoshi Wakabayashi, Iriya Muneta (Tokyo Tech), Shin-ichi Nishizawa (Kyushu Univ.), Kazuo Tsutsui (Tokyo Tech), Toshiro Hiramoto (The Univ. of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech)
pp. 36 - 40
SDM2020-31
[Invited Talk]
Analyses of CVD/ALD thin film deposition mechanism by reactive molecular dynamics simulation and quantum chemical calculation
Takashi Tokumasu, Naoya Uene, Takuya Mabuchi (Tohoku Univ.), Masaru Zaitsu, Shigeo Yasuhara (JAC)
pp. 41 - 46
SDM2020-32
[Invited Talk]
Insights into etching properties of atomic layer etching process for dielectric films
Nobuyuki Kuboi (SSS)
pp. 47 - 51
SDM2020-33
[Invited Talk]
NEGF simulation of band-to-band tunneling in van der Waals heterostructures
Nobuya Mori, Futo Hashimoto, Takaya Mishima, Hajime Tanaka (Osaka Univ)
pp. 52 - 57
SDM2020-34
[Invited Talk]
TCAD simulation for atomic layer channel Tunnel FETs based on ab-initio band calculation
Hiderhiro Asai (AIST), Tatsuya Kuroda (Osaka Univ.), Koichi Fukuda, Junichi Attori, Tsutomu Ikegami (AIST), Nobuya Mori (Osaka Univ.)
pp. 58 - 62
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.