IEICE Technical Report

Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2021-11-11 - 2021-11-12 / Issue Date : 2021-11-04

SDM2021-53
[Invited Talk] New Development of Silicon IGBT -- Scaling IGBT and Double-Gate IGBT --
Toshiro Hiramoto, Takuya Saraya (UTokyo)
pp. 1 - 6

SDM2021-54
[Invited Talk] Non-Normal Model Parameter Generation for Variation-Aware Circuit Simulation
Takashi Sato, Hiroki Tsukamoto, Song Bian (Kyoto Univ.), Michihiro Shintani (NAIST)
pp. 7 - 12

SDM2021-55
[Invited Talk] Prospects of HfZrO2-based FeFETs for Ultra-low Power Memory, Logic and AI Applications
Shinichi Takagi, Kasidit Toprasertpong, Xuan Luo, Eishin Nako, Zeyu Wang, Tsung-En Lee, Kento Tahara, Mitsuru Takenaka, Ryosho Nakane (U. Tokyo)
pp. 13 - 18

SDM2021-56
[Invited Talk] Study on the efficient erase opeartion in ferroelectric HfO2 FeFET toward 3D vertical structure
Masaharu Kobayashi, Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo), Chun-Jung Su (TSRI), Vita Pi-Ho Hu (NTU)
pp. 19 - 22

SDM2021-57
[Invited Talk] Characterization techniques of plasma process-induced defect creation in electronic devices
Koji Eriguchi (Kyoto Univ.)
pp. 23 - 28

SDM2021-58
A threshold voltage definition based on a standardized charge vs. voltage relationship
Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo)
pp. 29 - 32

SDM2021-59
[Invited Talk] SISPAD2021 Review
Hideki Minari (Sony Semiconductor Solutions)
pp. 33 - 37

SDM2021-60
[Invited Talk] Formation of high-quality SiC/SiO2 interfaces by suppressing carbon defects
Takuma Kobayashi (Kyoto Univ./Tokyo Tech), Takafumi Okuda, Keita Tachiki, Koji Ito (Kyoto Univ.), Yu-ichiro Matsushita (Tokyo Tech), Tsunenobu Kimoto (Kyoto Univ.)
pp. 38 - 42

SDM2021-61
[Invited Talk] Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport
Tomoya Nishimura, Katsumi Eikyu, Kenichiro Sonoda, Tamotsu Ogata (Renesas Electronics)
pp. 43 - 46

SDM2021-62
[Invited Talk] Modeling of Temperature Dependent Mobility of GaN HEMTs by Cellular Automaton
Koichi Fukuda, Junichi Hattori, Hidehiro Asai (AIST), Yaita Junya, Junji Kotani (Fujitsu)
pp. 47 - 52

SDM2021-63
[Invited Talk] Synthesis of turbostratic multilayer graphene nanoribbon and its electrical transport properties
Ryota Negishi (Toyo Univ.)
pp. 53 - 59

SDM2021-64
[Invited Talk] A Theoretical Study on Strain-Induced Change of Schottky Energy Barrier of Dumbbell-Shape Graphene-Nanoribbons for Highly Sensitive Strain Sensors
Qinqiang Zhang, Ken Suzuki, Hideo Miura (Tohoku Univ.)
pp. 60 - 65

SDM2021-65
[Invited Talk] Acceleration of nonequilibrium Green's function simulation for nanoscale devices by applying machine-learning model
Satofumi Souma (Kobe Univ.)
pp. 66 - 71

SDM2021-66
Simulation of Phonon Transport in Si Nanowires with Physics Informed Neural Networks
Yuma Fujita, Yuhei Suzuki, Yoshinari Kamakura (Osaka Inst. Technol.)
pp. 72 - 76

SDM2021-67
Inference of MOSFET Characteristics and Parameters with Machine Learning
Kohei Akazawa, Yuigo Nakanishi, Yuhei Suzuki, Yoshinari Kamakura (Osaka Inst. Technol.)
pp. 77 - 80

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan