IEICE Technical Report

Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2022-10-19 / Issue Date : 2022-10-12

SDM2022-54
[Invited Talk] Needs for X-ray Optical Elements -- Expectations for New Process Technology --
Wataru Yashiro (Tohoku Univ.)
pp. 1 - 4

SDM2022-55
Resistance Masurement Technology for Statistical Analysis of Thin Films Materials for Emerging Memory with High Accuracy and Wide Range
Hidemi Mitsuda, Ryousuke Tenman, Takezou Mawaki, Rihito Kuroda (Tohoku Univ)
pp. 5 - 8

SDM2022-56
A study on threshold voltage control of MFSFET with ultrathin ferroelectric nondoped HfO2 gate insulator for analog memory applications
Joong-Won Shin, Masakazu Tanuma, Shun-ichiro Ohmi (Tokyo Tech)
pp. 9 - 12

SDM2022-57
[Invited Talk] Fabrication of monolayer h-BN/LaB6 heterostructure using thermally aggregation method and its evaluation
Katsumi Nagaoka, Takashi Aizawa, Shun-ichiro Ohmi (NIMS)
pp. 13 - 15

SDM2022-58
Evaluation and analysis of ferroelectric BiFeO3 thin film surface
Fuminobu Imaizumi (NIT, Oyama)
pp. 16 - 19

SDM2022-59
The effect of microstructures of CrSiC thin film resistors on the electrical properties
Nozomi Ito, Kazuyoshi Maekawa, Yuji Takahashi, Takashi Tonegawa (Renesas)
pp. 20 - 23

SDM2022-60
[Invited Talk] Fabrication of organic ferroelectric transistors using paper substrates and application to organic solar cells
Park Byung Eun (University of Seoul), Shun-ichiro Ohmi (TIT)
pp. 24 - 27

SDM2022-61
A study on low-voltage operation of pentacene-based floating-gate memory utilizing Ar/N2-plasma nitridation with N-doped LaB6 metal and high-k LaBxNy insulator
Eun-Ki Hong, Shun-ichiro Ohmi (Tokyo Tech.)
pp. 28 - 33

SDM2022-62
[Invited Talk] Reliability improvement of SiC MOSFET by high-temperature CO2 annealing
Takuji Hosoi (Kwansei Gakuin Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
pp. 34 - 37

SDM2022-63
A study on threshold voltage control of MFSFET utilizing ferroelectric nondoped HfO2 thin films
Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech)
pp. 38 - 42

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan