Online edition: ISSN 2432-6380
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LQE2022-57
Application of Chemical Bath Deposited ZnO Nanorods to UV Light Detectors and Influence of CBD Solution Concentration on Their Device Properties
Taichi Fujikawa, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Tetsuya Yamamoto (Kochi Univ. Technol.)
pp. 1 - 4
LQE2022-58
Voltage-Current Characteristics and Optical Responses of PEDOT:PSS/ZnO Nanorods/GZO Heterojunctions
Tomoaki Terasako (Ehime Univ), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Tetsuya Yamamoto (Kochi Univ. Technol.)
pp. 5 - 10
LQE2022-59
CVD growth of 2D layered material g-C3N4/SnS2/graphene heterojunction
Youhei Mori, Kota Matsuoka, Baskar Malathi, Atsushi Nakamura (Shizuoka Univ)
pp. 11 - 16
LQE2022-60
Synthesis of g-C3N4/SnS2 composites for artificial photosynthesis application
Matsuoka Kota, Mori Youhei, Baskar Malathi, Nakamura Atsushi (Shizuoka Univ.)
pp. 17 - 22
LQE2022-61
Semiconducting properties of electrochemically deposited Ni(OH)2 thin films
Masahide Shimura, Koji Abe (Nitech)
pp. 23 - 26
LQE2022-62
Development of haptic gloves for communication
Ryuhei Takeda, Atsushi Nakamura, Kamen Kanev (Shizuoka Univ.)
pp. 27 - 32
LQE2022-63
Al-doped ZnO thin films deposited by sol-gel method
Koji Abe, Tasuku Kubota (NITech)
pp. 33 - 36
LQE2022-64
Development of Flexible and Conductive Nanocarbon-based Fibers by Wet Spinning Method
Hikaru Kondo, Haruka Jin, Rena Kato, Tetsuo Soga, Naoki Kishi (NIT)
pp. 37 - 39
LQE2022-65
Fabrication of MgSnO thin film using sol-gel method for SnS/MgSnO thin film solar cell
Kengo Inagaki, Yasushi Takano, Keito Shioda (Shizuoka Univ.)
pp. 40 - 44
LQE2022-66
Two-dimensional characterization of the edge structure of Ni/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy
Hiroki Imabayashi (Univ. of Fukui), Fumimasa Horikiri, Yoshinobu Narita, Noboru Fukuhara (Sumitomo Chemical Co, Ltd.), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui)
pp. 45 - 48
LQE2022-67
Evaluation of Fe Induced Trap in GaN HEMTs using Low-Frequency Y22 Measurement
Taiki Nishida, Toshiyuki Oishi (Saga Univ.), Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Elec. Corp.)
pp. 49 - 52
LQE2022-68
Fabrication and characterization of AlGaInN/GaN HEMTs on Single-Crystal AlN Substrate
SakuraTanaka, Tomoyuki Kawaide, Akiyoshi Inoue, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.)
pp. 53 - 56
LQE2022-69
Study on p-GaInN base layer and quaternary AlGaInN emitter layer for GaN HBTs
Yusuke Iida, Akira Mase, Masaya Takimoto, Yutaka Nikai, Takashi Egawa, Makoto Miyoshi (NITech)
pp. 57 - 60
LQE2022-70
Estimation of electrical characteristics of surface treatment after recess structure formation in AlGaN/GaN MIS-HEMTs
Keitaro Toda, Toshiharu Kubo, Takashi Egawa (NITech)
pp. 61 - 64
LQE2022-71
AlGaN/GaN vertical devices on Si substrate with highly resistive strained layer superlattice
Takaya Koike, Koki Hayashi, Ryosuke Hayafuji, Toshiharu Kubo, Takashi Egawa (NIT)
pp. 65 - 68
LQE2022-72
Effects of AlN/AlGaN interfacial control layers in AlN/AlGaN/GaN MIS devices
Yuchen Deng, Hibiki Anaba, Hideyuki Matsuyama, Toshi-kazu Suzuki (JAIST)
pp. 69 - 72
LQE2022-73
[Encouragement Talk]
Experimental studies on the recombination mechanism in III-nitride semiconductors by simultaneous measurements of radiative and non-radiative recombinations
Keito Mori-Tamamura, Yuya Morimoto, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony)
pp. 73 - 76
LQE2022-74
Simulation of exciton dynamics of III-nitrides and experimental analysis
-- Effects of phonons and dependence on temperature --
Masaya Chizaki, Kensuke Oki, Yoshihiro Ishitani (Chiba Univ.)
pp. 77 - 80
LQE2022-75
Growth temperature dependence of semipolar {11-22} AlInN/GaInN
Takahiro Fujisawa, Taiki Nakabayashi, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.)
pp. 81 - 84
LQE2022-76
LED device operation of InGaN-based multiwavelength emission structures fabricated by a thermal reflow method
Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
pp. 85 - 88
LQE2022-77
Fabrication of AlGaN-based UV-B semiconductor lasers and their device performance
Ayumu Yabutani, Ryota Hasegawa, Ryosuke kondo, Eri Matsubara (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Yoshito Jin, Tatsuya Matsumoto, Masamitsu Toramaru (JSW), Hironori Torii (JSW afty), Daichi Imai, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Hideto Miyake (Mie Univ.)
pp. 89 - 92
LQE2022-78
Efficiency Improvement of 230 nm-band AlGaN based LEDs with Al Compositional Graded Layer
Noritoshi Maeda, Yukio Kashima, Eriko Matsuura (RIKEN), Yasushi Iwaisako (NT), Hideki Hirayama (RIKEN)
pp. 93 - 98
LQE2022-79
Growth and device application of InGaN-based nanocolumn crystals using various crystal planes
Jumpei Yamada, Ai Mizuno, Rie Togashi, Ichirou Nomura, Katsumi Kishino (Sophia Univ.)
pp. 99 - 102
LQE2022-80
(See Japanese page.)
pp. 103 - 106
LQE2022-81
Development of Semiconductor Incoherent Light Source for Forward Raman Amplifier
Junji Yoshida (Furukawa Electric), Naoya Hojo (FFOD), Yasuto Tatamida, Tomohiro Ohisi, Shigehiro Takasaka, Takuya Kokawa, Satoru Ichihara, Ryuichi Sugisaki, Toshio Kimura (Furukawa Electric)
pp. 107 - 110
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.