IEICE Technical Report

Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2024-01-31 / Issue Date : 2024-01-24

SDM2023-74
[Invited Talk] Milli-Kelvin Analysis Revealing the Role of Band-edge States in Cryogenic MOSFETs
Hiroshi Oka, Hidehiro Asai, Takumi Inaba, Shunsuke Shitakata, Hitoshi Yui, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Takashi Nakayama, Takahiro Mori (AIST)
pp. 1 - 4

SDM2023-75
[Invited Talk] Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AlN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition
Kenji Ito, Tetsuo Narita, Hiroko Iguchi, Shiro Iwasaki, Daigo Kikuta (Toyota Central R&D), Emi Kano, Nobuyuki Ikarashi, Kazuyoshi Tomita, Masahiro Horita, Jun Suda (Nagoya Univ.)
pp. 5 - 8

SDM2023-76
[Invited Talk] CMOS Directly Bonded to Array (CBA) Technology for Future 3D Flash Memory
Masayoshi Tagami (KIOXIA)
pp. 9 - 12

SDM2023-77
[Invited Talk] High Peformance 3D Flash Memory with 3.2Gbps Interface and 205MB/s Program Throughput based on CBA(CMOS Directly Bonded to Array) Technology
Shigeki Kobayashi, , , , , (KIOXIA), , , , , , , , , , , , (KIOXIA)
pp. 13 - 16

SDM2023-78
[Invited Talk] Endurance Improvement of HfO-FeFET by Controlled Charge Trapping
Kunifumi Suzuki, Kiwamu Sakuma, Yoko Yoshimura, Reika Ichihara, Kazuhiro Matsuo, Daisuke Hagishima, Makoto Fujiwara, Masumi Saitoh (KIOXIA)
pp. 17 - 19

SDM2023-79
[Invited Talk] A highly reliable 1.8 V 1 Mb Hf0.5Zr0.5O2-based 1T1C FeRAM Array with 3-D Capacitors -- Report on IEDM2023 --
Jun Okuno, Takafumi Kunihiro, Yusuke Shuto, Tsubasa Yonai, Ryo Ono (Sony Semiconductor Solutions Corp.), Ruben Alcala (NaMLab), Maximilian Lederer, Konrad Seidel (Fraunhofer IPMS), Thomas Mikolajick, Uwe Schroeder (NaMLab), Taku Umebayashi (Sony Semiconductor Solutions Corp.)
pp. 20 - 23

SDM2023-80
[Invited Talk] Physical Reservoir Computing using HZO-based FeFETs for Edge-AI Applications
Shin-ichi Takagi, Kasidit Toprasertpong, Eishin Nkako, Rikuo Suzuki, Shin-Yi Min, Mitsuru Takenaka, Ryosho Nakane (The Univ. of Tokyo)
pp. 24 - 27

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan