IEICE Technical Report

Online edition: ISSN 2432-6380

Silicon Device and Materials

Workshop Date : 2025-11-13 - 2025-11-14 / Issue Date : 2025-11-06

SDM2025-55
[Invited Talk] Integrated Structural Design of Buried Nanomagnet for Silicon Spin Qubit Operation
Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori (AIST)
pp. 1 - 6

SDM2025-56
[Invited Talk] Nonequilibrium Green's Function Method Accounting for the Spatial Locality of Discrete Impurities -- Theoretical Framework and Nonlocal Impurity Scattering --
Nobuyuki Sano (Univ. Tsukuba)
pp. 7 - 12

SDM2025-57
[Invited Talk] Atomistic Analysis of the Electronic States in 4H-SiC Inversion Layers
Sachika Nagamizo, Hajime Tanaka, Nobuya Mori (UOsaka)
pp. 13 - 18

SDM2025-58
[Invited Talk] Development of an Avalanche Generation Model for 4H-SiC Based on Multiscale Modeling
Mitsuhiro Sengoku, Souzou Kanie (TDSC)
pp. 19 - 22

SDM2025-59
(See Japanese page.)
pp. 23 - 27

SDM2025-60
[Invited Talk] Purge Effect Simulation of Atomic Layer Deposition for High Aspect Ratio Structure
Satoshi Nakamura, Hisashi Kotakemori, Kenta Yashima, Taishi Ikeda, Takumi Ohmura, Yasuyuki Kayama (DSRJ), YunTae Lee, Gwangsu Yoo, Yukihide Tsuji, Shinwook Yi, Jaehoon Jeong, Dae Sin Kim (SEC)
pp. 28 - 33

SDM2025-61
[Invited Talk] SISPAD2025 Review
Satofumi Souma (Kobe Univ)
pp. 34 - 39

SDM2025-62
Integration of Analog Front End Circuits in Odor Sensor Systems
Takumi Nakamura, Yu Takeuchi, Takefumi Yoshikawa (TPU)
pp. 40 - 43

SDM2025-63
[Invited Talk] Closed-Form Physics-Based Inversion-Layer Mobility Model with Temperature Dependence for SiC MOSFETs
Tetsuo Hatakeyama (TPU)
pp. 44 - 47

SDM2025-64
[Invited Talk] Study on the Impact of Mg-Channeled Implantation on Junction Termination Extension for GaN Vertical Power Devices Using TCAD Simulation
Kazuki Kitagawa, Maciej Matys, Kachi Tetsu, Jun Suda (NU)
pp. 48 - 51

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan