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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2023)
Search Results: Keywords 'from:2023-06-26 to:2023-06-26'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-06-26 10:10 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | [Memorial Lecture]
Optimum Design of Channel Material and Surface Orientation for Extremely Thin Body nMOSFETs Based on Nonlinear Modeling of Surface Roughness Scattering Kei Sumita, Min-Soo Kang, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi (U. Tokyo)  SDM2023-27 |
Nano-sheet channel has been recently adopted in logic CMOS as the next-generation channel for FinFET because the nano-sh... [more] | SDM2023-27 pp.1-4 |
| SDM | 2023-06-26 10:50 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | [Memorial Lecture]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic-MOSFET Operation Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-28 |
Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale-in... [more] | SDM2023-28 pp.5-6 |
| SDM | 2023-06-26 11:30 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | Characterization of ultrathin SiO2/SiC interfaces by using self-assembled monolayers Ryo Okuhira (Kwansei Gakuin Univ.), Takamasa Kawanago (Tokyo Tech), Takuji Hosoi (Kwansei Gakuin Univ.) SDM2023-29 |
We have successfully evaluated ultrathin SiO2/4H-SiC(0001) interface property by stacking self-assembled monolayer (SAM)... [more] | SDM2023-29 pp.7-10 |
| SDM | 2023-06-26 11:50 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | Impact of SiH4 exposure to Fe-NDs on silicidation reaction Haruto Saito, Katsunori Makihara, Shun Tanida, Noriyuki Taoka, Seiichi Miyazaki (Nagoya Univ.) SDM2023-30 |
[more] | SDM2023-30 pp.11-14 |
| SDM | 2023-06-26 12:10 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | Evaluations of Crystalline Structures and Ferroelectricity of Zr/Hf-Multilayer Structures Formed by Thermal Oxidization Yunosuke Sano (Nagoya Univ.), Taoka Noriyuki (AIT), Makihara Katsunori (Nagoya Univ.), Ohta Akio (Hukuoka Univ.), Miyazaki Seiichi (Nagoya Univ.) SDM2023-31 |
The orthorhombic (O) phase of Hf oxides shows ferroelectricity even in ultra-thin films of ~5.0 nm. However, there are... [more] |
SDM2023-31 pp.15-18 |
| SDM | 2023-06-26 13:30 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | [Invited Lecture]
Pioneering Nondestructive Imaging of Ferroelectric Capacitors by Operando Laser-Based Photoemission Electron Microscopy Hirokazu Fujiwara, Yuki Itoya, Masaharu Kobayashi, Cedric Bareille, Shik Shin, Toshiyuki Taniuchi (Univ. of Tokyo) SDM2023-32 |
In order to elucidate the mechanism of characteristic modulations in HfO$_2$-based ferroelectric capacitors, an in-situ ... [more] | SDM2023-32 pp.19-22 |
| SDM | 2023-06-26 14:10 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | [Invited Lecture]
Demonstration of Crystal Phase Junction Transistor Katsuhiro Tomioka, Yu Katsumi, Junichi Motohisa (Hokkaido Univ.) SDM2023-33 |
[more] | SDM2023-33 pp.23-27 |
| SDM | 2023-06-26 14:50 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | [Invited Talk]
Atomic-Scale and Real-Time Observation of Solid-Phase Crystallization in Thin Silicon Film using in situ Heating High-Resolution TEM
-- Toward High-Performance Poly-Si Channel -- Manabu Tezura, Takanori Asano, Riichiro Takaishi, Mitsuhiro Tomita, Masumi Saitoh, Hiroki Tanaka (Kioxia Corp.) SDM2023-34 |
(To be available after the conference date) [more] | SDM2023-34 pp.28-30 |
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