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Technical Committee on Electron Devices (ED) (Searched in: 2007)
Search Results: Keywords 'from:2008-01-30 to:2008-01-30'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM | 2008-01-30 13:30 |
Hokkaido | MBE-VLS growth of GaAs nanowires on (111)Si substrate Masahito Yamaguchi, Ji-Hyun Paek, Tatsuya Nishiwaki, Yutaka Yoshida, Nobuhiko Sawaki (Nagoya Univ.)  ED2007-237 SDM2007-248 |
[more] | ED2007-237 SDM2007-248 pp.1-4 |
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| ED, SDM | 2008-01-30 13:55 |
Hokkaido | Electrical characterizations of InGaAs related nanowires grown by selective-area MOVPE Jinichiro Noborisaka, Takuya Sato, Junichi Motohisa, Shinjiro Hara, Takashi Fukui (Hokkaido Univ.) ED2007-238 SDM2007-249 |
Semiconductor nanowires are attracting much attention as a new class of nanoscale materials. Particularly, vertical surr... [more] | ED2007-238 SDM2007-249 pp.5-10 |
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| ED, SDM | 2008-01-30 14:20 |
Hokkaido | Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope Maciej Ligowski (Shizuoka Univ./Warsaw Univ. of Tech.), Ratno Nuryadi, Akihiro Ichiraku, Miftahul Anwar (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) ED2007-239 SDM2007-250 |
Dopant ionization was investigated by Kelvin Probe Force Microscope (KFM) measurements of surface potential of the thin ... [more] | ED2007-239 SDM2007-250 pp.11-16 |
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| ED, SDM | 2008-01-30 14:45 |
Hokkaido | Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer Daniel Moraru, Daisuke Nagata, Kiyohito Yokoi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) ED2007-240 SDM2007-251 |
Randomly distributed dopants in the channel of silicon-on-insulator (SOI) field-effect transistors (FETs) can introduce ... [more] | ED2007-240 SDM2007-251 pp.17-22 |
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| ED, SDM | 2008-01-30 15:20 |
Hokkaido | [Invited Talk]
InP ballistic transistors Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech) ED2007-241 SDM2007-252 |
[more] | ED2007-241 SDM2007-252 pp.23-28 |
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| ED, SDM | 2008-01-30 15:55 |
Hokkaido | Nonlinear electron transport properties in InAs/AlGaSb three-terminal ballistic junctions Masatoshi Koyama, Tatsuya Inoue, Naoki Amano, Kenji Fujiwara, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.) ED2007-242 SDM2007-253 |
The nonlinear electron transport properties and rectification effects in InAs/AlGaSb ballistic devices are reported. We ... [more] | ED2007-242 SDM2007-253 pp.29-32 |
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| ED, SDM | 2008-01-30 16:20 |
Hokkaido | Control of Nonlinear Characteristics in GaAs-based Three-terminal Nanowire Junction Devices and its Application to Logic Gates Shaharin Fadzli Abd Rahman, Yuta Shiratori, Seiya Kasai (Hokkaido Univ.) ED2007-243 SDM2007-254 |
[more] | ED2007-243 SDM2007-254 pp.33-38 |
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| ED, SDM | 2008-01-31 09:00 |
Hokkaido | Development of high-efficiency thermoelectric devices using Si nanostructures Hiroya Ikeda, Naomi Yamashita (Shizuoka Univ.) ED2007-244 SDM2007-255 |
In order to obtain the thermoelectric characteristics enough for practical use, we make use of nanostructures in the the... [more] | ED2007-244 SDM2007-255 pp.39-42 |
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| ED, SDM | 2008-01-31 09:25 |
Hokkaido | Approaches to the high temperature operation of the carbon nanotube single electron transistor Takahiro Mori (RIKEN), Shunsuke Sato, Kazuo Omura, Katsumi Uchida, Hirofumi Yajima (TUS), Koji Ishibashi (RIKEN) ED2007-245 SDM2007-256 |
Single-walled carbon nanotubes (SWNTs) are promising candidates for the building block of the single electron transistor... [more] | ED2007-245 SDM2007-256 pp.43-46 |
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| ED, SDM | 2008-01-31 09:50 |
Hokkaido | Proposal of CdTe X-ray image sensor driven by FEA with focusing electrode Yuichiro Hanawa, Takuya Sakata, Takashi Soda, Gui Han, Hisashi Morii, Katsumi Matsubara, Susumu Yamashita (RIE. Shizuoka Univ.), Masayoshi Nagao, Seigo Kanemaru (AIST), Yoichiro Neo, Toru Aoki, Hidenori Mimura (RIE. Shizuoka Univ.) ED2007-246 SDM2007-257 |
We proposed a novel CdTe X-ray image sensor, which was driven by the FEA, to obtain high spatial resolution X-ray images... [more] | ED2007-246 SDM2007-257 pp.47-50 |
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| ED, SDM | 2008-01-31 10:15 |
Hokkaido | Ultra-short pulse generators using resonant tunneling diodes and their integration with antenna on AlN ceramic substrates Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Hiroya Andoh (Toyota College Tech.), Kazuhiro Akamatsu, Hirofumi Nakata (Nippon Mining & Metals) ED2007-247 SDM2007-258 |
Ultra-short pulse generations were demonstrated on the two types of resonant tunneling diode (RTD) pulse generators. T... [more] |
ED2007-247 SDM2007-258 pp.51-56 |
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| ED, SDM | 2008-01-31 10:50 |
Hokkaido | Analysis on 4RTD Logic Circuits Tomohiko Ebata, Hiroki Okuyama, Takao Waho (Sophia Univ.) ED2007-248 SDM2007-259 |
4RTD logic operation has been analyzed based on a circuit model, circuit simulation, and experiment. First, equations de... [more] | ED2007-248 SDM2007-259 pp.57-62 |
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| ED, SDM | 2008-01-31 11:15 |
Hokkaido | Implementation of active and sequential circuits on GaAs-based nanowire network structures controlled by Schottky wrap gates Seiya Kasai (Hokkaido Univ., JST), Hong-Quan Zhao, Tamotsu Hashizume (Hokkaido Univ.) ED2007-249 SDM2007-260 |
Implementation of active and sequential circuits on semiconductor-based nanowire networks with a specific topology and p... [more] | ED2007-249 SDM2007-260 pp.63-68 |
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| ED, SDM | 2008-01-31 11:40 |
Hokkaido | Half adder operation using 2-output single-electron device composed of a Si nanodot array Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Kenji Yamazaki, Yukinori Ono (NTT), Hiroshi Inokawa (HShizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.) ED2007-250 SDM2007-261 |
[more] | ED2007-250 SDM2007-261 pp.69-73 |
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| ED, SDM | 2008-01-31 12:05 |
Hokkaido | Single-electron circuit for stochastic data processing using nano-MOSFETs Katsuhiko Nishiguchi, Akira Fujiwara (NTT BRL) ED2007-251 SDM2007-262 |
A MOSFET-based circuit utilizing single electrons is demonstrated at room temperature. Individual electrons randomly pas... [more] | ED2007-251 SDM2007-262 pp.75-79 |
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