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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2009)
Search Results: Keywords 'from:2009-05-14 to:2009-05-14'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, CPM, SDM | 2009-05-14 13:30 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Preparation and Evaluation of SrS:Cu films for blue EL elements Masaaki Isai, Yuji Kurachi, Norifumi Yamada, Toshinori Takeuchi, Takashi Hochin (Shizuoka Univ.)  ED2009-18 CPM2009-8 SDM2009-8 |
Preparation condition of SrS:Cu thin film electroluminescent element (EL) elements was investigated to improve blue-EL- ... [more] | ED2009-18 CPM2009-8 SDM2009-8 pp.1-5 |
| ED, CPM, SDM | 2009-05-14 13:55 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Evaluation of SrS:Cu films for blue EL elements Norifumi Yamada, Takashi Hochin, Masaaki Isai (Shizuoka Univ.) ED2009-19 CPM2009-9 SDM2009-9 |
The SrS:Cu films have been focused as a blue-emitting electroluminescence(EL) elements. The step-annealing effects on th... [more] | ED2009-19 CPM2009-9 SDM2009-9 pp.7-10 |
| ED, CPM, SDM | 2009-05-14 14:20 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Effect of quartz tube on crystal properties of LiMn2O4 films prepared by RF magnetron sputtering Takayuki Hosokawa, Satoshi Sekigawa, Masaaki Isai (Shizuoka Univ.) ED2009-20 CPM2009-10 SDM2009-10 |
The LiMn2O4 films for Li secondary batteries have been prepared by a RF magnetron sputtering method. The LiMn2O4 powder ... [more] | ED2009-20 CPM2009-10 SDM2009-10 pp.11-15 |
| ED, CPM, SDM | 2009-05-14 14:45 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Property of Ga2O3 films and evaluation of oxygen sensors properties Shinya Kayano, Takashi Horiuchi, Masaaki Isai (Shizuoka Univ.) ED2009-21 CPM2009-11 SDM2009-11 |
Recentry, from a point of environmental problems, oxygen gas sensors attract attention of controlling the exhaust gas. ... [more] | ED2009-21 CPM2009-11 SDM2009-11 pp.17-20 |
| ED, CPM, SDM | 2009-05-14 15:25 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Preparation of TiO2 thin films by RF magnetron sputtering method and their photocatalytic properties Tatsuya Ito, Tatsuya Endo, Masaaki Isai (Shizuoka Univ.), Tetsuya Sakai, Yoichi Hoshi (Tokyo Polytech. Univ.) ED2009-22 CPM2009-12 SDM2009-12 |
Low-temperature preparation of the TiO2 thin films was examined by using a RF magnetron sputtering method was examined. ... [more] | ED2009-22 CPM2009-12 SDM2009-12 pp.21-24 |
| ED, CPM, SDM | 2009-05-14 15:50 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | A proposal for Highly Transparent Chalcogenide Alloys for Thin-Film-Solar-Cell Applications Asraf M. Abdel Haleem, Masaya Ichimura (Nagoya Inst. of Tech.) ED2009-23 CPM2009-13 SDM2009-13 |
Gallium-Indium-sulfide-oxide thin films were deposited onto F-doped SnO2-coated glass by electrochemical deposition from... [more] | ED2009-23 CPM2009-13 SDM2009-13 pp.25-30 |
| ED, CPM, SDM | 2009-05-14 16:15 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Analysis of Atomic and Electronic Structures of Cu2ZnSnS4 Based on the First-Principle Calculation Yuki Nakashima, Masaya Ichimura (Nagoya Inst. of Tech.) ED2009-24 CPM2009-14 SDM2009-14 |
Cu2ZnSnS4 (CZTS) is a promising material for an absorber layer in the thin film solar cell. Atomic and electronic struct... [more] | ED2009-24 CPM2009-14 SDM2009-14 pp.31-35 |
| ED, CPM, SDM | 2009-05-14 16:40 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Deposition of Microcrystalline SiGe by Magnetron Sputtering on SiO2 Substrates Akihiko Hiroe, Tetsuya Goto, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.) ED2009-25 CPM2009-15 SDM2009-15 |
Microcrystalline Si1-xGex (x~0.8) has been successfully deposited over SiO2 substrates by magnetron sputtering. Detailed... [more] | ED2009-25 CPM2009-15 SDM2009-15 pp.37-42 |
| ED, CPM, SDM | 2009-05-15 09:00 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Growth of Homogeneous InGaSb Ternary Bulk Crystal and the Observation of Composition Profile in the Solution by X-Ray Penetration Method Govindasamy Rajesh, Hisashi Morii, Toru Aoki, Tadanobu Koyama, Yoshimi Momose, Akira Tanaka (Shizuoka Univ.), Tetsuo Ozawa (Shizuoka Inst. of Science and Tech.), Yuko Inatomi (JAXA), Yasuhiro Hayakawa (Shizuoka Univ.) ED2009-26 CPM2009-16 SDM2009-16 |
[more] | ED2009-26 CPM2009-16 SDM2009-16 pp.43-47 |
| ED, CPM, SDM | 2009-05-15 09:25 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | MBE-VLS growth of compound semiconductors nanowires on Si substrates Masahito Yamaguchi, Ji-Hyun Paek, Hirohide Ichihashi, Isao Horiuchi (Nagoya Univ.), Nobuhiko Sawaki (Aichi Inst. of Tech.) ED2009-27 CPM2009-17 SDM2009-17 |
Compound semiconductor nanowires (NWs) attract attention for the application to opro-electronic integrated circuit (OEIC... [more] | ED2009-27 CPM2009-17 SDM2009-17 pp.49-52 |
| ED, CPM, SDM | 2009-05-15 09:50 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Selective epitaxy growth mechanism of GaAs on circularly patterned GaAs (100) substrates by LPE and CCLP Mouleeswaran Deivasigamani., Tadanobu Koyama, Yasuhiro Hayakawa (Shizuoka Univ.) ED2009-28 CPM2009-18 SDM2009-18 |
[more] | ED2009-28 CPM2009-18 SDM2009-18 pp.53-58 |
| ED, CPM, SDM | 2009-05-15 10:30 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Growth of GaP on Si Substrates at High Temperature by MOVPE Tatsuya Takagi, Takuya Okamoto, Shunro Fuke, Yasushi Takano (Shizuoka Univ.) ED2009-29 CPM2009-19 SDM2009-19 |
GaP was grown on misoriented Si substrates using metalorganic vapor phase epitaxy (MOVPE). At 700 and 800℃,no mirror suf... [more] | ED2009-29 CPM2009-19 SDM2009-19 pp.59-64 |
| ED, CPM, SDM | 2009-05-15 10:55 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Luminescence dynamics of p-GaPN alloys and application for modulation doped highly-strained GaAsN/GaPN quantum wells. Saburo Mitsuyoshi, Kazuyuki Umeno, Noriyuki Urakami, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2009-30 CPM2009-20 SDM2009-20 |
We investigated the luminescence properties of Mg-doped p-GaPN alloys grown by molecular beam eitaxy (MBE). The near ban... [more] | ED2009-30 CPM2009-20 SDM2009-20 pp.65-70 |
| ED, CPM, SDM | 2009-05-15 11:20 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Growth and luminescence characterization of self-assembled InGaAsN/GaPN quantum dots Noriyuki Urakami, Ryosuke Noma, Kazuyuki Umeno, Saburo Mitsuyoshi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. of Tech.) ED2009-31 CPM2009-21 SDM2009-21 |
In order to realize dislocation-free quantum dot (QD) laser diodes on Si, we calculated the conduction band offsets of I... [more] | ED2009-31 CPM2009-21 SDM2009-21 pp.71-76 |
| ED, CPM, SDM | 2009-05-15 13:00 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | MOVPE growth and deep-ultraviolet chathodoluminescence of AlGaN on AlN/sapphire Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.) ED2009-32 CPM2009-22 SDM2009-22 |
A high-quality AlGaN with high Al mole fraction is required for improvement of device performance such as light-emitting... [more] | ED2009-32 CPM2009-22 SDM2009-22 pp.77-81 |
| ED, CPM, SDM | 2009-05-15 13:25 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | a-plane GaN grown on r-plane sapphire by MOVPE Bei Ma, Reina Miyagawa, Weiguo Hu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.) ED2009-33 CPM2009-23 SDM2009-23 |
[more] | ED2009-33 CPM2009-23 SDM2009-23 pp.83-86 |
| ED, CPM, SDM | 2009-05-15 13:50 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Operation stability assessment of AlGaN/GaN HEMT Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.) ED2009-34 CPM2009-24 SDM2009-24 |
[more] | ED2009-34 CPM2009-24 SDM2009-24 pp.87-90 |
| ED, CPM, SDM | 2009-05-15 14:15 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Electrochemical oxidation of GaN for surface control structure Naohisa Harada, Nanako Shiozaki, Tamotsu Hashizume (hokkaido Univ.) ED2009-35 CPM2009-25 SDM2009-25 |
[more] | ED2009-35 CPM2009-25 SDM2009-25 pp.91-94 |
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