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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2007)
Search Results: Keywords 'from:2007-11-16 to:2007-11-16'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, R, ED | 2007-11-16 13:00 |
Osaka | Electrical Characterization of Yttriumaluminate(YAlO)Film Keiko Matsunouchi, Naoyoshi Komatsu, Chiharu Kimura, Hidemitsu Aoki, Takashi Sugino (Osaka Univ.)  R2007-46 ED2007-179 SDM2007-214 |
To achieve high power FET using wide bandgap semiconductor, a gate insulator film with a wide bandgap and a high dielect... [more] | R2007-46 ED2007-179 SDM2007-214 pp.1-6 |
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| SDM, R, ED | 2007-11-16 13:25 |
Osaka | Galvanic Corrosion Suppression of High-k/Metal Gates Daisuke Watanabe, Hidemitsu Aoki, Saori Hotta, Chiharu Kimura, Takashi Sugino (Osaka Univ) R2007-47 ED2007-180 SDM2007-215 |
[more] | R2007-47 ED2007-180 SDM2007-215 pp.7-11 |
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| SDM, R, ED | 2007-11-16 13:50 |
Osaka | Oxidation of SiC and GaN Surface in High Pressure and High Temperature Water Takashi Futatsuki, Taro Oe (Organo Corp.), Hidemitsu Aoki, Naoyoshi Komatsu, Chiharu Kimura, Takashi Sugino (Osaka Univ.) R2007-48 ED2007-181 SDM2007-216 |
The field effect transistor (FET) devices on Silicon Carbide (SiC) and Gallium nitride (GaN), which have a wide bandgap,... [more] | R2007-48 ED2007-181 SDM2007-216 pp.13-17 |
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| SDM, R, ED | 2007-11-16 14:15 |
Osaka | High Stability of Drain Current at High Temperatures in Multi-Mesa-Channel AlGaN/GaN HEMT Takahiro Tamura, Junji Kotani, Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) R2007-49 ED2007-182 SDM2007-217 |
We fabricated a multi-mesa-channel (MMC) structure by forming a periodic trench just under a gate electrode to improve t... [more] | R2007-49 ED2007-182 SDM2007-217 pp.19-22 |
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| SDM, R, ED | 2007-11-16 14:55 |
Osaka | Reliability Study of AlGaN/GaN HEMTs Device Keiichi Matsushita, Shinichiro Teramoto, Hiroyuki Sakurai, Jeoungchill Shim, Hisao Kawasaki, Kazutaka Takagi, Yoshiharu Takada, Kunio Tsuda (Toshiba) R2007-50 ED2007-183 SDM2007-218 |
AlGaN/GaN HEMTs devices are studied intensely because of its ability of operation at higher voltage with higher power de... [more] | R2007-50 ED2007-183 SDM2007-218 pp.23-26 |
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| SDM, R, ED | 2007-11-16 15:20 |
Osaka | Degradation-Mode Analysis for Highly Reliable GaN-HEMT Yusuke Inoue, Satoshi Masuda, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Naoki Hara, Hisao Shigematsu, Kazukiyo Joshin (Fujitsu Labs. Ltd.) R2007-51 ED2007-184 SDM2007-219 |
[more] | R2007-51 ED2007-184 SDM2007-219 pp.27-31 |
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| SDM, R, ED | 2007-11-16 15:45 |
Osaka | Leakage Current Screening for AlGaN/GaN HEMT Mass-Production Fumikazu Yamaki, Kazuaki Ishii, Masahiro Nishi, Hitoshi Haematsu, Yasunori Tateno, Haruo Kawata (EUD) R2007-52 ED2007-185 SDM2007-220 |
[more] | R2007-52 ED2007-185 SDM2007-220 pp.33-37 |
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| SDM, R, ED | 2007-11-16 16:10 |
Osaka | A New TDDB Degradation Model Based on Cu Ion Drift in Cu Interconnect Dielectrics Naohito Suzumura, Shigehisa Yamamoto, , , Junko Komori, (Renesas Technology Corp.) R2007-53 ED2007-186 SDM2007-221 |
A new physical model of Time-Dependent Dielectric Breakdown (TDDB) in Cu interconnect dielectrics is proposed. TDDB occu... [more] | R2007-53 ED2007-186 SDM2007-221 pp.39-44 |
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