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| Chair |
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Kanji Yasui (Nagaoka Univ. of Tech.) |
| Vice Chair |
|
Yasushi Takemura (Yokohama National Univ.) |
| Secretary |
|
Tadayuki Imai (NTT), Satoru Noge (Numazu National College of Tech.) |
| Assistant |
|
Toshishige Shimamura (NTT), Katsuya Abe (Shinshu Univ.) |
|
|
|
| Chair |
|
Hitoshi Kawaguchi (NAIST) |
| Vice Chair |
|
Tsukuru Katsuyama (Sumitomo Electric Industries) |
| Secretary |
|
Kenji Sato (NEC), Tomoyuki Miyamoto (Tokyo Inst. of Tech.) |
|
|
|
| Chair |
|
Tamotsu Hashidume (Hokkaido Univ.) |
| Vice Chair |
|
Tetsu Kachi (Toyota Central R&D Labs.) |
| Secretary |
|
Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba) |
| Assistant |
|
Michihiko Suhara (Tokyo Metropolitan Univ.), Tetsuzo Ueda (Panasonic) |
|
| Conference Date |
Thu, Nov 11, 2010 10:00 - 17:15
Fri, Nov 12, 2010 10:00 - 17:00 |
| Topics |
|
| Conference Place |
Osaka Univ. Nakanoshima Center |
| Address |
4-3-53 Nakanoshima, Kita-ku, Osaka-shi, 530-0005 Japan |
| Transportation Guide |
http://www.onc.osaka-u.ac.jp/others/map/index.php |
Contact
Person |
Dr. T. Ueda, Panasonic
+81-6-6444-21 |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Thu, Nov 11 AM
10:00 - 11:40 |
| (1) |
10:00-10:25 |
Optical properties of ZnO films grown on sapphire substrates using high-energy H2O generated by a catalytic reaction  ED2010-142 CPM2010-108 LQE2010-98 |
Hitoshi Miura, Takashi Otani, Tomoyoshi Kuroda, Hiroshi Nishiyama, Kanji Yasui (Nagaoka Univ. Technol.) |
| (2) |
10:25-10:50 |
Study on improved crystal quality of non-polar A-plane InN grown on r-plane sapphire by RF-MBE ED2010-143 CPM2010-109 LQE2010-99 |
Tsutomu Araki, Keisuke Kawashima, Tomohiro Yamaguchi, Yasushi Nanishi (Ritsumeikan Univ.) |
| (3) |
10:50-11:15 |
GaN growth on pseudo (111)Al substrates by RF-MBE ED2010-144 CPM2010-110 LQE2010-100 |
Tohru Honda, Masato Hayashi, Taiga Goto, Tatsuhiro Igaki (Kogakuin Univ.) |
| (4) |
11:15-11:40 |
Growth characteristics of GaNP layer and InAs-based QDs on Si substrate ED2010-145 CPM2010-111 LQE2010-101 |
Satoru Tanabe, Rei Nishio, Yoshitaka Kobayashi, Kosuke Nemoto, Tomoyuki Miyamoto (Tokyo Inst. of Tech.) |
Thu, Nov 11 PM
13:00 - 17:15 |
| (5) |
13:00-13:25 |
AlN growth on SiC by LP-HVPE ED2010-146 CPM2010-112 LQE2010-102 |
Kenta Okumura, Takuya Nomura, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Osamu Eryu (NIT) |
| (6) |
13:25-13:50 |
ELO-AlN on trench-patterned AlN/sapphire by low-pressure HVPE ED2010-147 CPM2010-113 LQE2010-103 |
Kohei Fujita, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Jyun Norimatsu, Hideki Hirayama (Riken) |
| (7) |
13:50-14:15 |
Fabrication and characterization of Si-doped AlGaN for deep-ultraviolet light-source by EB excitation |
Yuki Shimahara, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HPK) |
| |
14:15-14:30 |
Break ( 15 min. ) |
| (8) |
14:30-14:55 |
A Comprehensive Understanding of Previously-Reported Polarization Properties in Nonpolar and Semipolar InGaN Quantum Wells ED2010-148 CPM2010-114 LQE2010-104 |
Atsushi Yamaguchi (Kanazawa Inst. Tech.), Kazunobu Kojima (Kyoto Univ.) |
| (9) |
14:55-15:20 |
Carrier diffusion dynamics in InGaN/GaN SQW studied by spatial and temporal resolved PL spectroscopy
-- Efficiency droop mechanism assessed by SNOM -- ED2010-149 CPM2010-115 LQE2010-105 |
Akira Hashiya, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
| (10) |
15:20-15:45 |
100 mW Deep Ultraviolet Emission from AlGaN/AlN Quantum Wells by Electron Beam Pumping ED2010-150 CPM2010-116 LQE2010-106 |
Takao Oto, Ryan G. Banal (Kyoto Univ.), Ken Kataoka (Ushio Inc.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) |
| (11) |
15:45-16:10 |
High Efficiency AlInN Ultraviolet Photodiodes on AlN Template ED2010-151 CPM2010-117 LQE2010-107 |
Yusuke Sakai, Junki Ichikawa, Takashi Egawa (Nagoya Inst. of Tech.) |
| |
16:10-16:25 |
Break ( 15 min. ) |
| (12) |
16:25-16:50 |
Current control of AlGaN/GaN HEMT with multi-mesa nanochannels ED2010-152 CPM2010-118 LQE2010-108 |
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) |
| (13) |
16:50-17:15 |
High-Power GaN-HEMT for Millimeter-Wave Amplifier ED2010-153 CPM2010-119 LQE2010-109 |
Kozo Makiyama, Toshihiro Ohki, Naoya Okamoto, Masahito Kanamura, Satoshi Masuda, Yasuhiro Nakasha, Kazukiyo Joshin, Kenji Imanishi (Fujitsu, Fujitsu Labs.), Naoki Hara, Shiro Ozaki, Norikazu Nakamura (Fujitsu Labs.), Toshihide Kikkawa (Fujitsu, Fujitsu Labs.) |
Fri, Nov 12 AM
10:00 - 11:40 |
| (14) |
10:00-10:25 |
Characterization of insulated gates on GaN and AlGaN/GaN structures ED2010-154 CPM2010-120 LQE2010-110 |
Yujin Hori, Naohisa Harada, Chihoko Mizue, Tamotsu Hashizume (Hokkaido Univ.) |
| (15) |
10:25-10:50 |
Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy ED2010-155 CPM2010-121 LQE2010-111 |
Daigo Kikuta, Tetsuo Narita, Naoko Takahashi, Keita Kataoka, Yasuji Kimoto, Tsutomu Uesugi, Tetsu Kachi (Toyota CRDL, Inc.), Masahiro Sugimoto (Toyota Motor Corp.) |
| (16) |
10:50-11:15 |
Vertical GaN Diode on GaN Free-Standing Substrate ED2010-156 CPM2010-122 LQE2010-112 |
Shuichi Yagi, Shoko Hirata, Yasunobu Sumida, Masahiro Bessho, Hiroji Kawai (POWDEC), Toshiharu Matsueda, Akira Usui (Furukawa Co., Ltd.) |
| (17) |
11:15-11:40 |
Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates ED2010-157 CPM2010-123 LQE2010-113 |
Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tsukuru Katsuyama, Takao Nakamura (SEI) |
Fri, Nov 12 PM
13:00 - 17:00 |
| |
- |
[Panel Session] GaN Power Devices
Chair:T. Hasizume (Hokkaido Univ.) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| CPM |
Technical Committee on Component Parts and Materials (CPM) [Latest Schedule]
|
| Contact Address |
|
| LQE |
Technical Committee on Lasers and Quantum Electronics (LQE) [Latest Schedule]
|
| Contact Address |
Kenji Sato (NEC Corp.)
TEL +81-44-431-7616, FAX +81-44-431-7619
E- : s n     c
Tomoyuki Miyamoto (Tokyo Institute of Technology)
TEL +81-45-924-5059, FAX +81-45-924-5977
E-: t   tpi   |
| Announcement |
Homepage of LQE is http://www.ieice.org/~lqe/jpn/ |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Hara Naoki （Fujitsu Lab.）
TEL : +81-46-250-8242、FAX : +81-46-250-8168
E- :    o   
Kunio Tsuda（Toshiba）
TEL : +81-44-549-2142、FAX : +81-44-520-1501
E- :   o   ba
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E- :     t
Tetsuzo Ueda（Panasonic)
TEL：+81-75-956-8273、FAX：+81-75-956-9110
E-：   zopa c |
Last modified: 2010-11-05 13:44:13
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