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| Chair |
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Kunio Uchiyama (Hitachi) |
| Vice Chair |
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Masahiko Yoshimoto (Kobe Univ.), Toshihiko Hamasaki (TI) |
| Secretary |
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Yoshio Hirose (Fujitsu Labs.), Hiroaki Suzuki (Renesas) |
| Assistant |
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Toshimasa Matsuoka (Osaka Univ.), Ken Takeuchi (Univ. of Tokyo), Kenichi Okada (Tokyo Inst. of Tech.) |
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| Conference Date |
Mon, Apr 18, 2011 10:00 - 18:55
Tue, Apr 19, 2011 09:30 - 16:40 |
| Topics |
Memory Device Technologies |
| Conference Place |
Kobe University Takigawa Memorial Hall |
| Address |
1-1 Rokkodai-cho, Nada-ku, Kobe 657-8501, Japan |
| Transportation Guide |
Hanshin "Mikage" station,JR "Rokkomichi" station,Hankyu "Rokko" station Take Kobe City Bus
http://www.kobe-u.ac.jp/en/access/rokko/other-transportation-terminals.htm |
| Sponsors |
IEEE SSCS Japan/Kansai Chapter
|
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Mon, Apr 18 AM
10:00 - 12:30 |
| (1) |
10:00-10:50 |
[Invited Talk]
Trends and Multi-level-cell Technology of Spin Transfer Torque Memory  ICD2011-1 |
Takashi Ishigaki, Takayuki Kawahara, Riichiro Takemura, Kazuo Ono, Kenchi Ito (Hitachi), Hideo Ohno (Tohoku U.) |
| (2) |
10:50-11:40 |
[Invited Talk]
A Technical Trend and Embedded DRAM Technology for High-Performance NAND Flash Memories ICD2011-2 |
Daisaburo Takashima, Mitsuhiro Noguchi, Noboru Shibata, Kazushige Kanda, Hiroshi Sukegawa, Shuso Fujii (Toshiba) |
| (3) |
11:40-12:30 |
[Invited Talk]
ReRAM Test Macro with High Speed Read/Program Circuit
-- Conductive Bridge ReRAM with 2.3GB/s Read throughput and 216MB/s Program-throughput -- ICD2011-3 |
Keiichi Tsutsui, Wataru Otsuka, Koji Miyata, Makoto Kitagawa, Tomohito Tsushima (Sony) |
| |
12:30-13:30 |
Lunch Break ( 60 min. ) |
Mon, Apr 18 PM
13:30 - 18:55 |
| (1) |
13:30-14:20 |
[Invited Talk]
Technology Trend of NAND Flash Memories
-- A 151mm2 64Gb 2b/cell NAND Flash Memory in 24nm CMOS Technology -- ICD2011-4 |
Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami, Junpei Sato, Teruo Takagiwa, Naoaki Kanagawa, Hitoshi Shiga, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Takeshi Ogawa, Makoto Iwai (Toshiba), Kiyofumi Sakurai (Toshiba Memory Systems), Toru Miwa (SanDisk) |
| (2) |
14:20-15:10 |
[Invited Talk]
Highly reliable low power SSD
-- Data modulation signal processing technologies of memory cotroller -- ICD2011-5 |
Ken Takeuchi, Shuhei Tanakamaru, Chinglin Hung (Univ. Tokyo) |
| |
15:10-15:20 |
Break ( 10 min. ) |
| (3) |
15:20-16:10 |
[Invited Talk]
Trend in Phase Change Memory and activity in TIA ICD2011-6 |
Norikatsu Takaura (LEAP) |
| (4) |
16:10-17:00 |
[Invited Talk]
3-Dimensional NAND Flash memories ICD2011-7 |
Seiichi Aritome (Hynix) |
| |
17:00-17:10 |
Break ( 10 min. ) |
| (5) |
17:10-18:55 |
|
Tue, Apr 19 AM
09:30 - 12:10 |
| (1) |
09:30-09:55 |
0.45-V Operating Vt-Variation Tolerant 9T/18T Dual-Port SRAM ICD2011-8 |
Koji Yanagida, Hiroki Noguchi, Shunsuke Okumura, Tomoya Takagi, Koji Kugata (Kobe Univ.), Masahiko Yoshimoto (Kobe Univ./JST), Hiroshi Kawaguchi (Kobe Univ.) |
| (2) |
09:55-10:20 |
A Digitized Replica Bitline Delay Technique for Random-Variation-Tolerant Timing Generation of SRAM Sense Amplifiers ICD2011-9 |
Yusuke Niki, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Fumihiko Tachibana, Yuki Fujimura, Tomoaki Yabe (Toshiba) |
| (3) |
10:20-10:45 |
Multi-step Word-line Control Technology in Hierarchical Cell Architecture for Scaled-down High-density SRAMs ICD2011-10 |
Koichi Takeda, Toshio Saito, Shinobu Asayama, Yoshiharu Aimoto, Hiroyuki Kobatake, Shinya Ito, Toshifumi Takahashi, Kiyoshi Takeuchi, Masahiro Nomura, Yoshihiro Hayashi (Renesas Electronics) |
| |
10:45-10:55 |
Break ( 10 min. ) |
| (4) |
10:55-11:20 |
0.5-V FinFET SRAM Using Dynamic-Threshold-Voltage Pass Gates ICD2011-11 |
Shin-ichi O'uchi, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Tadashi Nakagawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara (AIST) |
| (5) |
11:20-11:45 |
0.5-V, 5.5-nsec Access Time, Bulk-CMOS 8T SRAM with Suspended Bit-Line Read Scheme ICD2011-12 |
Toshikazu Suzuki, Shinichi Moriwaki, Atsushi Kawasumi, Shinji Miyano, Hirofumi Shinohara (STARC) |
| (6) |
11:45-12:10 |
Suppress of Half Select Disturb in 8T-SRAM by Local Injected Electron Asymmetric Pass Gate Transistor ICD2011-13 |
Kousuke Miyaji, Kentaro Honda, Shuhei Tanakamaru (Univ. of Tokyo), Shinji Miyano (STARC), Ken Takeuchi (Univ. of Tokyo) |
| |
12:10-13:10 |
Lunch Break ( 60 min. ) |
Tue, Apr 19 PM
13:10 - 14:50 |
| (7) |
13:10-14:00 |
[Invited Talk]
A 12Gb/s Non-Contact Interface with Coupled Transmission Lines ICD2011-14 |
Tsutomu Takeya, Lan Nan, Shinya Nakano, Noriyuki Miura, Hiroki Ishikuro, Tadahiro Kuroda (Keio Univ.) |
| (8) |
14:00-14:25 |
1-Tbyte/s 1-Gbit Multicore DRAM Architecture using 3-D Integration for High-throughput Computing ICD2011-15 |
Kazuo Ono, Yoshimitsu Yanagawa, Akira Kotabe, Tomonori Sekiguchi (Hitachi, CRL) |
| (9) |
14:25-14:50 |
Design of Program-voltage(20V) Booster and TSV for High Speed and Low Power 3-D Solid State Drive System ICD2011-16 |
Teruyoshi Hatanaka, Koh Johguchi, Koichi Ishida, Tadashi Yasufuku, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi (Univ. of Tokyo) |
| |
14:50-15:00 |
Break ( 10 min. ) |
Tue, Apr 19 PM
15:00 - 16:40 |
| (10) |
15:00-15:25 |
Basic memory characteristics of HfO2-CB-RAM ICD2011-17 |
Shigeyuki Tsuruta (Tottori Univ.), Kentaro Kinoshita (Tottori Univ./ TEDREC), Tatsuya Nakabayashi (Tottori Univ.), Satoru Kishida (Tottori Univ./ TEDREC) |
| (11) |
15:25-15:50 |
Physical Analysis on ReRAM Filaments Using Atomic Force Microscope ICD2011-18 |
Takatoshi Yoda (Tottori Univ.), Kentaro Kinoshita, Satoru Kishida (Tottori University/TEDREC), Toshiya Ogiwara, Hideo Iwai, Sei Fukushima, Shigeo Tanuma (NIMS) |
| (12) |
15:50-16:15 |
Switching Mechanism of Perovskite-Oxide-Based Resistive Random Access Memory (ReRAM) ICD2011-19 |
Akihiro Hanada (Tottori Univ.), Kentaro Kinoshita (Tottori Univ./TEDREC), Katsuhiko Matsubara, Takahiro Fukuhara (Tottori Univ.), Satoru Kishida (Tottori Univ./TEDREC) |
| (13) |
16:15-16:40 |
Analyses on Co-relation between Low and High Resistance States in ReRAM Consisting of Binary-Transition-Metal-Oxides ICD2011-20 |
Hayato Tanaka (Tottori Univ), Kentaro Kinoshita, Satoru Kishida (Tottori Univ./TEDREC) |
| Announcement for Speakers |
| General Talk | Each speech will have 20 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| ICD |
Technical Committee on Integrated Circuits and Devices (ICD) [Latest Schedule]
|
| Contact Address |
Ken Takeuchi (The University of Tokyo)
TEL 03-5841-6672,FAX 03-5841-6672
E- :icd-  ry lsi tu-  |
Last modified: 2011-04-15 11:13:42
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