| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, ED
(Workshop) |
2012-06-27
08:50 |
Okinawa |
Okinawa Seinen-kaikan |
[Keynote Address]
TCAD challenges and opportunities for predictive development
Yongwoo Kwon, Dae Sin Kim, Young-Kwan Park (Samsung Electronics) |
[more] |
|
SDM, ED
(Workshop) |
2012-06-27
09:30 |
Okinawa |
Okinawa Seinen-kaikan |
[Keynote Address]
More-than-Moore Devices based on Advanced CMOS Technologies
Hitoshi Wakabayashi (Sony) |
Based on the discussion on advanced CMOS device technologies using benchmark data, more-than-Moore devices are introduce... [more] |
|
SDM, ED
(Workshop) |
2012-06-27
10:10 |
Okinawa |
Okinawa Seinen-kaikan |
[Keynote Address]
Recent Advance of GaN Power Electronics
Daisuke Ueda (Panasonic) |
[more] |
|
SDM, ED
(Workshop) |
2012-06-27
11:00 |
Okinawa |
Okinawa Seinen-kaikan |
Electrical characteristics of IGBT using a field stop trench gate structure
Ey Goo Kang (Far East Univ.), Eun Sik Jung (Maplesemiconductor Incorporated), Yong Tae Kim (KIST) |
[more] |
|
SDM, ED
(Workshop) |
2012-06-27
11:15 |
Okinawa |
Okinawa Seinen-kaikan |
Optimization and characterization of 600V super junction power MOSFET using a deep trench structure
Yong Tae Kim (KIST), Eun Sik Jung (Maplesemiconductor Inc.), Ey Goo Kang (Far East Univ.) |
Recently, Power MOSFET has been intensively investigated as voltage-driven devices for the applications of large power s... [more] |
|
SDM, ED
(Workshop) |
2012-06-27
11:30 |
Okinawa |
Okinawa Seinen-kaikan |
[Invited Talk]
Gate Stack Technologies for Silicon Carbide Power MOS Devices
Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Atthawut Chanthaphan (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shuhei Mitani, Yuki Nakano, Takashi Nakamura (ROHM), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
Silicon carbide (SiC) is a promising material for high-power electronic devices. Although SiO$_2$ dielectric film can be... [more] |
|
SDM, ED
(Workshop) |
2012-06-27
11:00 |
Okinawa |
Okinawa Seinen-kaikan |
[Invited Talk]
III-nitride-based Visible-blind and Solar-blind Photodetectors
Hai Lu, Rong Zhang, Youdou Zheng (School of ESE, Nanjing Univ.) |
Group-III nitride semiconductors have attracted much attention in ultraviolet (UV) photodetector applications due to the... [more] |
|
SDM, ED
(Workshop) |
2012-06-27
11:30 |
Okinawa |
Okinawa Seinen-kaikan |
The Very Fast Transferred Pixel with a Multi-Pinchoff Photodiode for Wafer-Scale X-Ray Sensor
Joonghyeok Byeon, Jongmin Kim, Won-Young Jung (Dongbu Hitek), Ji-Hoon Lim, Jae-Kyung Wee (Soongsil Univ.) |
[more] |
|
SDM, ED
(Workshop) |
2012-06-27
11:45 |
Okinawa |
Okinawa Seinen-kaikan |
[Invited Talk]
Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors
Kyung Rok Kim, Min Woo Ryu, Sunhae Shin, Hee Cheol Hwang, Kibog Park (UNIST) |
We report the first implementation of a modeling and simulation environment for the plasmonic terahertz (THz) detector b... [more] |
|
SDM, ED
(Workshop) |
2012-06-27
13:15 |
Okinawa |
Okinawa Seinen-kaikan |
Investigation and Optimization of the n-channel and p-channel L-shaped Tunneling Field-Effect Transistors
Sang Wan Kim (Seoul National Univ.), Woo Young Choi (Sogang Univ.), Min-Chul Sun, Hyun Woo Kim, Byung-Gook Park (Seoul National Univ.) |
Tunneling field-effect transistors (TFETs) have been regarded as next-generation ultra-low power devices thanks to low o... [more] |
|
SDM, ED
(Workshop) |
2012-06-27
13:30 |
Okinawa |
Okinawa Seinen-kaikan |
The Asymmetric I-V Characteristics of Vertical MOSFET Induced by Tapered Silicon Pillar
Takuya Imamoto, Tetsuo Endoh (Tohoku Univ.) |
In this paper, we show the asymmetric I-V characteristics induced by the tapered silicon pillar of the Vertical MOSFET a... [more] |
|
SDM, ED
(Workshop) |
2012-06-27
13:45 |
Okinawa |
Okinawa Seinen-kaikan |
A High Performance SRAM Sense Amplifier with Vertical MOSFET
Hyoungjun Na, Tetsuo Endoh (Tohoku Univ.) |
In this paper, a high performance SRAM sense amplifier with vertical MOSFET is proposed, and its performances are invest... [more] |
|
SDM, ED
(Workshop) |
2012-06-27
14:00 |
Okinawa |
Okinawa Seinen-kaikan |
Effects of Random Dopant Fluctuations on NAND Flash Memory Cells
Jungeun Kang, Boram Han (Sogang Univ.), Kyoung-Rok Han, Chung sung Jae, Gyu-Seog Cho, Sung-Kye Park, Seok-Kiu Lee (SK Hynix), Woo Young Choi (Sogang Univ.) |
The effects of random-dopant-fluctuation (RDF) on NAND flash memory cells are investigated by using device simulation. T... [more] |
|
SDM, ED
(Workshop) |
2012-06-27
14:15 |
Okinawa |
Okinawa Seinen-kaikan |
Control Effect of New Optimized Structure of Planar Thin Floating Gate (FG) NAND Flash to Fringing Field
Do-Bin Kim, Yoon Kim, Se Hwan Park, Wandong Kim, Joo Yun Seo, Seung-Hyun Kim, Byung-Gook Park (Seoul National Univ.) |
As cell size of floating gate (FG) type NAND flash memory shrinks, formation of structure which has control gate wrappin... [more] |
|
SDM, ED
(Workshop) |
2012-06-27
14:30 |
Okinawa |
Okinawa Seinen-kaikan |
A Novel CMOS-Based PNP BJT Structure for Analog Applications
Seon-Man Hwang, Yi-Jung Jung, Hyuk-Min Kwon, Jae-Hyung Jang, Ho-Young Kwak, Sung-Kyu Kwon (Chungnam National Univ.), Yi-Sun Chung, Da-Soon Lee, Jong-Kon Lee (Magnachip Semiconductor Inc.), Hi-Deok Lee (Chungnam National Univ.) |
In this paper, a novel pnp bipolar junction transistor (BJT) structure based on CMOS technology is proposed to improve t... [more] |
|
SDM, ED
(Workshop) |
2012-06-27
14:45 |
Okinawa |
Okinawa Seinen-kaikan |
100nm-gate-length Normally-off Accumulation-Mode FD-SOI MOSFETs for Low Noise Analog/RF Circuits
Hidetoshi Utsumi, Ryohei Kasahara, Yukihisa Nakao, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
[more] |
|
SDM, ED
(Workshop) |
2012-06-27
15:15 |
Okinawa |
Okinawa Seinen-kaikan |
Field-induced degradation of organic field effect transistors under vacuum condition
Hoonsang Yoon, Youngjin Kang, Jongsun Choi, Hyungtak Kim (Hongik Univ.) |
OFETs suffer from environmental factors such as humidity and air. OFETs also degrade under electric bias stress test per... [more] |
|
SDM, ED
(Workshop) |
2012-06-27
15:30 |
Okinawa |
Okinawa Seinen-kaikan |
Nonvolatile Memory Thin-Film Transistors Using Solution-Processed Oxide Semiconducting Channel and Ferroelectric Polymer Gate Insulator
Jun-Yong Bak (Kyung Hee Univ.), Soon-Won Jung, Ho-Jun Ryu, Sang-Hee Ko Park, Chi-Sun Hwang (ETRI), Sung-Min Yoon (Kyung Hee Univ.) |
[more] |
|
SDM, ED
(Workshop) |
2012-06-27
15:45 |
Okinawa |
Okinawa Seinen-kaikan |
Influence of co-sputtered HfO2-Ti gate dielectric in IZO-based Transparent thin film transistors
Jungil Yang, Donghee Lee, Dongkyu Cho, Sanghyun Woo, Yoosung Lim, Sungmin Park, Daekuk Kim, Moonsuk Yi (PNU.) |
Metal-oxide thin film transistors (TFTs) have been fabricated using HfO2 and co-sputtered HfO2–Ti (HfTiO) as gate ... [more] |
|
SDM, ED
(Workshop) |
2012-06-27
16:00 |
Okinawa |
Okinawa Seinen-kaikan |
A New RSD Bottom Gate Poly-Si Thin Film Transistor With Inside Spacer
Yi-Hsiang Chiu, Shan-Jen Yang, Feng-Tso Chien (Feng Chia Univ.), Chii-Wen Chen (Minghsin Univ.) |
In this research, a raised source/drain (RSD), accompanied with an inside spacer bottom gate poly-Si thin film transisto... [more] |
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