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Technical Committee on Microwaves (MW) (Searched in: 2012)
Search Results: Keywords 'from:2013-01-17 to:2013-01-17'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2013-01-17 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Design of NRD Guide at 94 GHz Futoshi Kuroki, Shingo Inoue, Tomonori Morita, Yohei Kubo (KNCT)  ED2012-112 MW2012-142 |
[more] | ED2012-112 MW2012-142 pp.1-4 |
| MW, ED | 2013-01-17 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Study of RF Energy Harvesting from Broadcasting and Communication Radio Wave Shoichi Kitazawa, Hirokazu Kamoda, Masahiro Hanazawa, Susumu Ano, Hiroshi Ban, Kiyoshi Kobayashi (ATR) ED2012-113 MW2012-143 |
We report here the energy harvesting from ambient electromagnetic wave such as TV broadcasting and cellular telephone fr... [more] | ED2012-113 MW2012-143 pp.5-10 |
| MW, ED | 2013-01-17 15:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Q Factor Simulation and SSB Noise Measurement for Transmission Line Feedback FET Oscillators with FET Parasitic Elements Takanari Minami, Sonshu Sakihara, Tuya Wuren, Hideyuki Uehara, Takashi Ohira (TUT) ED2012-114 MW2012-144 |
[more] | ED2012-114 MW2012-144 pp.11-16 |
| MW, ED | 2013-01-17 16:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Double-layer Corporate-feed Hollow-waveguide Slot Array Antenna and Its Data Transmission Test Results in millimeter wave band Dongjin Kim, Jiro Hirokawa, Makoto Ando (Tokyo Institute of Tech.), Jun Takeuchi, Akihiko Hirata (NTT), Tadao Nagatsuma (Osaka Univ.) ED2012-115 MW2012-145 |
[more] | ED2012-115 MW2012-145 pp.17-22 |
| MW, ED | 2013-01-17 16:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 120-GHz-band 20-Gb/s QPSK Transmitter and Receiver modules Hiroyuki Takahashi, Toshihiko Kosugi, Akihiko Hirata, Jun Takeuchi, Koichi Murata, Naoya Kukutsu (NTT) ED2012-116 MW2012-146 |
NTT laboratories are developing a 120-GHz-band wireless link using quadrature-phase-shift keying (QPSK). We have reporte... [more] | ED2012-116 MW2012-146 pp.23-28 |
| MW, ED | 2013-01-17 16:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Evaluation of fade slope due to weather for 120-GHz-band wireless link Akihiko Hirata, Jun Takeuchi, Hiroyuki Takahashi, Naoya Kukutsu (NTT) ED2012-117 MW2012-147 |
NTT has been developing 120-GHz-band wireless link that can transmit 10-Gbit/s data in order to meet the increase in the... [more] | ED2012-117 MW2012-147 pp.29-33 |
| MW, ED | 2013-01-18 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Low-loss On Chip CMOS Patterned Ground Coplanar Waveguide Transmission Line for Millimeter-wave Technology Dayang Azra Binti Awang Mat, Ramesh K. Pokharel, Rohana Sapawi, Haruichi Kanaya, Keiji Yoshida (Kyushu Univ.) ED2012-118 MW2012-148 |
In this paper, slow wave coplanar waveguide (CPW) transmission line is proposed, designed on patterned ground shield in ... [more] | ED2012-118 MW2012-148 pp.35-38 |
| MW, ED | 2013-01-18 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Study on 0-dB Coupler Using Half-mode Groove Waveguide for Wireless Power Transmission Seiya Mori, Mitsuyoshi Kishihara, Kensuke Okubo, Hironori Takimoto (Okayama Prefectural Univ.), Isao Ohta (Univ. of Hyogo) ED2012-119 MW2012-149 |
This paper proposes a design of 0-dB forward coupler consisting of the half-mode groove waveguides and fabrication of 0-... [more] | ED2012-119 MW2012-149 pp.39-44 |
| MW, ED | 2013-01-18 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 2.6GHz Broadband 40W GaN HEMT Doherty Amplifier Norihiro Yoshimura, Naoki Watanabe, Hiroaki Deguchi, Norihiko Ui (SEDI) ED2012-120 MW2012-150 |
A 40W average output power asymmetric Doherty power amplifier (PA) for 2.6GHz band was developed using broadband inverse... [more] | ED2012-120 MW2012-150 pp.45-48 |
| MW, ED | 2013-01-18 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | The study of SSPS GaN amplifier for high-efficiency operation by gate length Yutaro Yamaguchi, Toshiyuki Oishi, Hiroshi Otsuka, Takaaki Yoshioka, Hidetoshi Koyama, Fuminori Samejima, Yoshinori Tsuyama, Koji Yamanaka (Mitsubishi Electric Corp.) ED2012-121 MW2012-151 |
In this paper, GaN HEMT high efficiency amplifier for Space Solar Power Stations/System (SSPS) is presented. 0.25μm gate... [more] | ED2012-121 MW2012-151 pp.49-52 |
| MW, ED | 2013-01-18 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | GaN Gate Injection Transistor with Integrated Si Schottky Barrier Diode for High Efficient DC-DC Converters Shinji Ujita, Tatsuo Morita, Hidekazu Umeda, Yusuke Kinoshita, Satoshi Tamura, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2012-122 MW2012-152 |
We present a novel GaN-based normally-off transistor with an integrated Si Schottky barrier diode (SBD) for low voltage ... [more] | ED2012-122 MW2012-152 pp.53-56 |
| MW, ED | 2013-01-18 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of Lag Phenomena, Current Collapse and Breakdown Characteristics in Source-Field-Plate AlGaN/GaN HEMTs Hideyuki Hanawa, Hiraku Onodera, Kazushige Horio (Shibaura Inst. Tech.) ED2012-123 MW2012-153 |
Two-dimensional analysis of lag phenomena, current collapse and breakdown voltages in source-field-plate AlGaN/GaN HEMTs... [more] | ED2012-123 MW2012-153 pp.57-62 |
| MW, ED | 2013-01-18 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs Kenichiro Tanaka, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2012-124 MW2012-154 |
Kinetic studies on the current collapse of a normally-off AlGaN/GaN heterostructure field effect transistor under a high... [more] | ED2012-124 MW2012-154 pp.63-68 |
| MW, ED | 2013-01-18 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of drain leakage current in AlGaN/GaN HEMT Kazuo Hayashi, Toshiyuki Oishi, Yoshitaka Kamo, Yutaro Yamaguchi, Hiroshi Otsuka, Koji Yamanaka, Masatoshi Nakayama (Mitsubishi Electric Corp.), Yasuyuki Miyamoto (Tokyo Institute of Technology) ED2012-125 MW2012-155 |
Traps in GaN layer of AlGaN/GaN HEMTs have been studied by using both experimental data and TCAD simulation. Two traps w... [more] | ED2012-125 MW2012-155 pp.69-74 |
| MW, ED | 2013-01-18 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Ryuji Katayama, Takashi Matsuoka, Tetsuya Suemitsu (Tohoku Univ.) ED2012-126 MW2012-156 |
This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a ... [more] | ED2012-126 MW2012-156 pp.75-78 |
| MW, ED | 2013-01-18 15:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | InGaAs HEMTs with T-gate electrodes formed by multi-layer SiCN molds Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu (Tohoku Univ.) ED2012-127 MW2012-157 |
Recently, the gate lengths of HEMTs have been achieved below 0.1 $\mu$m. In general, T-gate electrodes are employed for ... [more] | ED2012-127 MW2012-157 pp.79-84 |
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