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Chair |
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Tomokazu Shiga (Univ. of Electro-Comm.) |
Vice Chair |
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Mutsumi Kimura (Ryukoku Univ.), Yuko Kominami (Shizuoka Univ.) |
Secretary |
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Munekazu Date (NTT), Masahiro Yamaguchi (Tokyo Inst. of Tech.) |
Assistant |
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Rumiko Yamaguchi (Akita Univ.), Hiroyuki Nitta (Japan Display), Mitsuru Nakata (NHK), Takashi Kojiri (ZEON), Ryosuke Nonaka (Toshiba), Takeshi Okuno (Samsung) |
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Chair |
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Yuzou Oono (Univ. of Tsukuba) |
Vice Chair |
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Tatsuya Kunikiyo (Renesas) |
Secretary |
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Rihito Kuroda (Tohoku Univ.) |
Assistant |
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Tadashi Yamaguchi (Renesas) |
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Conference Date |
Mon, Dec 14, 2015 11:00 - 16:30 |
Topics |
Si and Si-related Materials and Devices, and Display Technology |
Conference Place |
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Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics.
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Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Mon, Dec 14 AM 11:00 - 13:15 |
(1) |
11:00-11:15 |
Fabrication of FinFET Structure with High Selectivity Etching Using Newly Developed SiNx Etch Gas EID2015-9 SDM2015-92 |
Takashi Kojiri (Tohoku Univ./ZEON), Tomoyuki Suwa, Keiichi Hashimoto, Akinobu Teramoto, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) |
(2) |
11:15-11:30 |
Study of Deoxyribonucleic Acid (DNA) for Channel Materials of MOSFET
-- Non-Coulomb Blockade/Staircase Phenomena -- EID2015-10 SDM2015-93 |
Naoto Matsuo, Fumiya Nakamura, Tadao Takada, Kazushige Yamana, Akira Heya (Univ Hyogo), Shin Yokoyama (Hiroshima Univ), Yasuhisa Omura (Kansai Univ) |
(3) |
11:30-11:45 |
Memory Application of Ultrafine FET utilizing Supramolecular Protein EID2015-11 SDM2015-94 |
Takahiko Ban, Mutsunori Uenuma (NAIST), Shinji Migita (AIST), Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka (NAIST) |
(4) |
11:45-12:00 |
Distribution of Forming Characteristics in NiO-based ReRAM EID2015-12 SDM2015-95 |
Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) |
(5) |
12:00-12:15 |
Effect of gate voltage application on the conversion efficiency of solar-cell EID2015-13 SDM2015-96 |
Kohei Oki, Takashi Kusakabe, Naoto matsuo, Akira Heya (Univ. of Hyogo) |
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12:15-13:15 |
Lunch ( 60 min. ) |
Mon, Dec 14 PM 13:15 - 15:00 |
(6) |
13:15-13:30 |
Lamp-voltage dependence of FLA crystallization for a-Ge film EID2015-14 SDM2015-97 |
Shota Hirano, Akira Heya, Naoto Matsuo (Univ. of Hyogo), Naoya Kawamoto (Yamaguchi Univ.), Yoshiaki Nakamura, Takehiko Yokomori, Masaki Yoshioka (USHIO) |
(7) |
13:30-13:45 |
Unseeded Growth of Poly Crystalline Ge with (111) Surface Orientation on Insulator by Pulsed Green Laser Annealing |
Yoshiaki Nieda, Toru Takao (Nara Inst. of Sci.& Technol.), Masahiro Horita (Kyoto Univ.), Nobuo Sasaki (Japan women's Univ.), Yasuaki Ishikawa, Yukiharu Uraoka (Nara Inst. of Sci.& Technol.) |
(8) |
13:45-14:00 |
Evaluation of In2O3 film deposited by RF magnetron sputtering EID2015-15 SDM2015-98 |
Toshihiro Yoshioka, Junji Ogawa, Masahiro Yuge, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) |
(9) |
14:00-14:15 |
Characterization of GaxSn1-xO thin film by the mist CVD method EID2015-16 SDM2015-99 |
Masahiro Yuge, Junji Ogawa, Tosihiro Yosioka, Yuta Kato, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ) |
(10) |
14:15-14:30 |
Dependence of MR effect on annealing temperature of IGZO EID2015-17 SDM2015-100 |
Shogo Miyamura, Haruki Shiga, Kota Imanishi, Asuka Fukawa, Mutsumi Kimura, Tokiyoshi Matsuda (Ryukoku Univ) |
(11) |
14:30-14:45 |
Magnetic characteristic measurement of Cr-Si-N EID2015-18 SDM2015-101 |
Haruki Shiga, Shogo Miyamura, Kota Imanishi, Asuka Hukawa, Mutsumi Kimura, Tokiyoshi Matsuda (Ryukoku Univ.), Yashushi Hiroshima (KOA) |
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14:45-15:00 |
Break ( 15 min. ) |
Mon, Dec 14 PM 15:00 - 16:30 |
(12) |
15:00-15:15 |
Self-Aligned Metal Double Gate Low-Temperature Poly-Ge TFT with Thin Channel Layer on a Glass Substrate EID2015-19 SDM2015-102 |
Yuya Nishimura, Akito Hara (Tohoku Gakuin Univ.) |
(13) |
15:15-15:30 |
Characterization of SnO2/Al2O3 thin film and evaluation of thin film transistor EID2015-20 SDM2015-103 |
Junji Ogawa, Masahiro Yuge, Tosihiro Yosioka, Tokiyosi Matsuda, Mutsumi Kimura (Ryukoku Univ) |
(14) |
15:30-15:45 |
Characteristic evaluation of electric current on infrared radiation in low-temperature poly-Si TFT EID2015-21 SDM2015-104 |
Shuhei Kitajima, Katsuya Kitou, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.), Masahide Inoue (Huawei Japan) |
(15) |
15:45-16:00 |
Research and development of Artificial Retina using thin film transistors
-- in vitro experiment using TFT -- EID2015-22 SDM2015-105 |
Shota Haruki, Keisuke Tomioka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryudai) |
(16) |
16:00-16:15 |
Operation verification of neural network using a simplified element by FPGA EID2015-23 SDM2015-106 |
Nao Nakamura, Ryuhei Morita, Yuki Koga, Hiroki Nakanishi, Sumio Sugisaki, Tomoharu Yokoyama, Koki Watada, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.) |
(17) |
16:15-16:30 |
Research and development of cellular neural network with a simplified structure
-- Operation verification by FPGA and variable resistance -- EID2015-24 SDM2015-107 |
Hiroki Nakanishi, Ryuhei Morita, Yuki Koga, Nao Nakamura, Sumio Sugisaki, Tomoharu Yokoyama, Koki Watada, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ) |
Announcement for Speakers |
General Talk | Each speech will have 10 minutes for presentation and 5 minutes for discussion. |
Contact Address and Latest Schedule Information |
EID |
Technical Committee on Electronic Information Displays (EID) [Latest Schedule]
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Contact Address |
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SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
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Contact Address |
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-: e3 |
Last modified: 2015-10-22 23:12:38
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