|
|
| Chair |
|
Masaaki Kuzuhara (Univ. of Fukui) |
| Vice Chair |
|
Tamotsu Hashidume (Hokkaido Univ.) |
| Secretary |
|
Manabu Arai (New JRC), Shin-ichiro Takatani (Hitachi) |
| Assistant |
|
Naoki Hara (Fujitsu Labs.), Koichi Murata (NTT) |
|
|
|
| Chair |
|
Tanemasa Asano (Kyushu Univ.) |
| Vice Chair |
|
Toshihiro Sugii (Fujitsu) |
| Secretary |
|
Shigeru Kawanaka (Toshiba), Hisahiro Anzai (Sony) |
| Assistant |
|
Syunichiro Ohmi (Tokyo Inst. of Tech.) |
|
| Conference Date |
Wed, Jan 30, 2008 13:30 - 18:20
Thu, Jan 31, 2008 09:00 - 12:30 |
| Topics |
|
| Conference Place |
|
Contact
Person |
011-706-3211 |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Wed, Jan 30 PM
13:30 - 15:10 |
| (1) |
13:30-13:55 |
MBE-VLS growth of GaAs nanowires on (111)Si substrate  ED2007-237 SDM2007-248 |
Masahito Yamaguchi, Ji-Hyun Paek, Tatsuya Nishiwaki, Yutaka Yoshida, Nobuhiko Sawaki (Nagoya Univ.) |
| (2) |
13:55-14:20 |
Electrical characterizations of InGaAs related nanowires grown by selective-area MOVPE ED2007-238 SDM2007-249 |
Jinichiro Noborisaka, Takuya Sato, Junichi Motohisa, Shinjiro Hara, Takashi Fukui (Hokkaido Univ.) |
| (3) |
14:20-14:45 |
Dopant ionization in silicon nanodevices investigated by Kelvin Probe Force Microscope ED2007-239 SDM2007-250 |
Maciej Ligowski (Shizuoka Univ./Warsaw Univ. of Tech.), Ratno Nuryadi, Akihiro Ichiraku, Miftahul Anwar (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) |
| (4) |
14:45-15:10 |
Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer ED2007-240 SDM2007-251 |
Daniel Moraru, Daisuke Nagata, Kiyohito Yokoi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) |
| |
15:10-15:20 |
Break ( 10 min. ) |
Wed, Jan 30 PM
15:20 - 18:20 |
| (5) |
15:20-15:55 |
[Invited Talk]
InP ballistic transistors ED2007-241 SDM2007-252 |
Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech) |
| (6) |
15:55-16:20 |
Nonlinear electron transport properties in InAs/AlGaSb three-terminal ballistic junctions ED2007-242 SDM2007-253 |
Masatoshi Koyama, Tatsuya Inoue, Naoki Amano, Kenji Fujiwara, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.) |
| (7) |
16:20-16:45 |
Control of Nonlinear Characteristics in GaAs-based Three-terminal Nanowire Junction Devices and its Application to Logic Gates ED2007-243 SDM2007-254 |
Shaharin Fadzli Abd Rahman, Yuta Shiratori, Seiya Kasai (Hokkaido Univ.) |
| |
16:45-16:50 |
Break ( 5 min. ) |
| (8) |
16:50-18:20 |
|
Thu, Jan 31 AM
09:00 - 12:30 |
| (9) |
09:00-09:25 |
Development of high-efficiency thermoelectric devices using Si nanostructures ED2007-244 SDM2007-255 |
Hiroya Ikeda, Naomi Yamashita (Shizuoka Univ.) |
| (10) |
09:25-09:50 |
Approaches to the high temperature operation of the carbon nanotube single electron transistor ED2007-245 SDM2007-256 |
Takahiro Mori (RIKEN), Shunsuke Sato, Kazuo Omura, Katsumi Uchida, Hirofumi Yajima (TUS), Koji Ishibashi (RIKEN) |
| (11) |
09:50-10:15 |
Proposal of CdTe X-ray image sensor driven by FEA with focusing electrode ED2007-246 SDM2007-257 |
Yuichiro Hanawa, Takuya Sakata, Takashi Soda, Gui Han, Hisashi Morii, Katsumi Matsubara, Susumu Yamashita (RIE. Shizuoka Univ.), Masayoshi Nagao, Seigo Kanemaru (AIST), Yoichiro Neo, Toru Aoki, Hidenori Mimura (RIE. Shizuoka Univ.) |
| (12) |
10:15-10:40 |
Ultra-short pulse generators using resonant tunneling diodes and their integration with antenna on AlN ceramic substrates ED2007-247 SDM2007-258 |
Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Hiroya Andoh (Toyota College Tech.), Kazuhiro Akamatsu, Hirofumi Nakata (Nippon Mining & Metals) |
| |
10:40-10:50 |
Break ( 10 min. ) |
| (13) |
10:50-11:15 |
Analysis on 4RTD Logic Circuits ED2007-248 SDM2007-259 |
Tomohiko Ebata, Hiroki Okuyama, Takao Waho (Sophia Univ.) |
| (14) |
11:15-11:40 |
Implementation of active and sequential circuits on GaAs-based nanowire network structures controlled by Schottky wrap gates ED2007-249 SDM2007-260 |
Seiya Kasai (Hokkaido Univ., JST), Hong-Quan Zhao, Tamotsu Hashizume (Hokkaido Univ.) |
| (15) |
11:40-12:05 |
Half adder operation using 2-output single-electron device composed of a Si nanodot array ED2007-250 SDM2007-261 |
Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Kenji Yamazaki, Yukinori Ono (NTT), Hiroshi Inokawa (HShizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.) |
| (16) |
12:05-12:30 |
Single-electron circuit for stochastic data processing using nano-MOSFETs ED2007-251 SDM2007-262 |
Katsuhiko Nishiguchi, Akira Fujiwara (NTT BRL) |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Manabu Arai（New JRC）
TEL: 049-278-1477、FAX: 049-278-1419
E- :   i njr
Shinichiro Takatani（Hitachi）
TEL: 049-278-1477、FAX: 049-278-1419
E-:        er 
Koichi Murata（NTT)
TEL：046-240-2871、FAX：046-270-2872
E-：  aecl
Hara Naoki （Fujitsu Lab.）
TEL : 046-250-8242、FAX : 046-250-4337
E- :   nf    |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Yasushiro Nishioka (Nihon University, College of Science and Technology)
TEL047-469-6482,FAX047-467-9504
E-: e  t n-u ,a  cmsk  |
Last modified: 2007-11-20 08:50:08
|