Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM |
2007-11-16 12:30 |
Niigata |
Nagaoka University of Technology |
Analysis of the temperature dependences of Bi-2212 intrinsic Josephson junctions Chisato Mouri, Kyouhei Oguro, Takashi Yoshida, Hayataka Tominaga, Takahiro Kato, Katsuyoshi Hamasaki (Nagaoka Univ. Tech.) CPM2007-105 |
[more] |
CPM2007-105 pp.1-5 |
CPM |
2007-11-16 12:55 |
Niigata |
Nagaoka University of Technology |
Fabrication and characterization of Bi-based high-Tc superconductor devices Takashi Yoshida, Hiroaki Nawa, Hayataka Tominaga, Atsushi Miwa, Takahiro Kato, Katsuyoshi Hamasaki (NUT), Hisashi Shimakage (NICT) CPM2007-106 |
FIB (Focused Ion Beam) and double-side fabrication techniques were widely used to fabricate intrinsic Josephson junction... [more] |
CPM2007-106 pp.7-11 |
CPM |
2007-11-16 13:20 |
Niigata |
Nagaoka University of Technology |
Optical and Electrical Properties of Organic Thin Films Prepared by RF-Plasma Deposition Tengku Nadzlin Bin Tengku Ibrahim, Kunihiko Tanaka, Hisao Uchiki (Nagaoka Univ. of Tech.) CPM2007-107 |
[more] |
CPM2007-107 pp.13-17 |
CPM |
2007-11-16 13:45 |
Niigata |
Nagaoka University of Technology |
Examination of OLEDs device Applied ITO Thin Films Deposited at Low Temperature Yusuke Nakata, Shinsuke Miyazaki, Takeshi Umetsu, Yoshihiro Itou, Masato Niki, Hidehiko Shimizu, Takeo Maruyama (Niigata Univ.), Yoichi Hoshi (Tokyo Polytechnic Univ.), Masahiro Minagawa (Nippon Seiki) |
[more] |
|
CPM |
2007-11-16 14:20 |
Niigata |
Nagaoka University of Technology |
Evaluation of the uniformity in the properties of ZnO transparent conductive films grown by rf magnetron sputtering with a grid electrode Akira Asano (NUT), Hironori Katagiri (NNCT), Yuichiro Kuroki, Kanji Yasui, Masasuke Takata, Tadashi Akahane (NUT) CPM2007-108 |
We have investigated the deposition of Al doped ZnO (AZO) films using a radio frequency (rf) magnetron sputtering appara... [more] |
CPM2007-108 pp.19-22 |
CPM |
2007-11-16 14:45 |
Niigata |
Nagaoka University of Technology |
Preparation of Mo/Si Multilayer Thin Films by Sputter-Beam Deposition Method Daisaku Nagahama, Takashi Aikoh, Makoto Hirata, Hidehiko Shimizu, Takeo Maruyama, Tetsuo Oka, Haruo Iwano (Niigata Univ.) |
[more] |
|
CPM |
2007-11-16 15:10 |
Niigata |
Nagaoka University of Technology |
HIgh rate reactive sputter-deposition of TiO2 films by using two sputtering sources Tetsuya Sakai, Osamu Kamiya, Yoichi Hoshi (Tokyo Polytechnic Univ.), Hidehiko Shimizu (Niigata Univ.) CPM2007-109 |
[more] |
CPM2007-109 pp.23-27 |
CPM |
2007-11-16 15:35 |
Niigata |
Nagaoka University of Technology |
Temperature Coefficient Resistance of NiCr Film Resistor with ZrO2 Buffer Layer Deposited by Gas Flow Sputtering Satoshi Iwatsubo (Toyama Industrial Tech. Ctr.) CPM2007-110 |
The property of temperature coefficient of resistance (TCR) of NiCr film resistor with buffer layer of ZrO2 was investig... [more] |
CPM2007-110 pp.29-34 |
CPM |
2007-11-16 16:10 |
Niigata |
Nagaoka University of Technology |
Characterization and barrier properties of ZrB2 thin films for Cu interconnects Mayumi B. Takeyama (Kitami Inst. of Technol.), Yasuo Nakadai, Shozo Kambara (ULVAC Materials, Inc.), Masanobu Hatanaka (ULVAC, Inc.), Atsushi Noya (Kitami Inst. of Technol.) CPM2007-111 |
The extremely thin diffusion barrier deposited at low temperature is urgently required for reliable Cu
interconnects ap... [more] |
CPM2007-111 pp.35-38 |
CPM |
2007-11-16 16:35 |
Niigata |
Nagaoka University of Technology |
Suppression of interfacial reaction and/or diffusion in Cu/ZrN/field insulating film/Si system Mayumi B. Takeyama, Masaru Sato, Atsushi Noya (Kitami Inst. of Technol.) CPM2007-112 |
We have examined the nano-crystalline thin ZrN film with a nitrogen-rich composition as an extremely thin diffusion barr... [more] |
CPM2007-112 pp.39-42 |
CPM |
2007-11-16 17:00 |
Niigata |
Nagaoka University of Technology |
Crystal Growth of Cr2O3 Sputtered Films on Sapphire Substrates and platinum electrode Shummpei Otsuki, Takeshi Asada, Nobuyuki Iwata, Hiroshi Yamamoto (Nihon Univ) CPM2007-113 |
The Cr2O3 thin films were grown on sapphire substrate and Pt film to apply magnetoelectric oxides to oxides electronics.... [more] |
CPM2007-113 pp.43-48 |
CPM |
2007-11-16 17:25 |
Niigata |
Nagaoka University of Technology |
Carbon nanotube growth with dipped FeMo and FePt nanoparticle catalysts by chemical vapor deposition method Daisuke Ishizuka, Takuya Sonomura, Hiroki Okuyama, Nobuyuki Iwata, Hiroshi Yamamoto (CST, Nihon Univ.) CPM2007-114 |
Our aim of the study is to grow the chirality-controlled single wall carbon nanotube (SWNT) using free electron laser (F... [more] |
CPM2007-114 pp.49-53 |
CPM |
2007-11-17 09:00 |
Niigata |
Nagaoka University of Technology |
Growth of GaN by hot-mesh CVD
-- Effect of Ru coated W mesh -- Yusuke Fukada, Kazuki Abe, Yuichiro Kuroki (Nagaoka Univ. Tech.), Maki Suemitsu, Takashi Ito (CIR. Tohoku Univ.), Yuzuru Narita (Kyusyu Inst. Tech.), Tetsuo Endoh (RIEC, Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ. Tech.) CPM2007-115 |
[more] |
CPM2007-115 pp.55-58 |
CPM |
2007-11-17 09:25 |
Niigata |
Nagaoka University of Technology |
Formation and control of Ge, SiC nanodots on Si(001)-2x1 surface using monomethylgermane Tomoaki Ogiwara, Haruki Suto, Kanji Yasui, Tadashi Akahane, Masasuke Takata (NUT) CPM2007-116 |
Formation of high-density nano-dots using monomethylgermane (MMGe) on Si (001)-$2^{o}$off surface was investigated. By t... [more] |
CPM2007-116 pp.59-64 |
CPM |
2007-11-17 09:50 |
Niigata |
Nagaoka University of Technology |
Preparation SiC/SOI structure substrate using Hot-Mesh CVD technique,and dependence of top Si layer thickness Yuichiro Makino, Hitoshi Miura, Hiroshi Nishiyama, Kanji Yasui, Masasuke Takata, Yasunobu Inoue, Tadashi Akahane (Nagaoka Univ. of Tech.) CPM2007-117 |
Epitaxial growth of 3C-SiC films on SOI substrates was investigated by hot-mesh (HM-) CVD method using monomethylsilane ... [more] |
CPM2007-117 pp.65-68 |
CPM |
2007-11-17 10:15 |
Niigata |
Nagaoka University of Technology |
Fabrication of SiC MIS Structure by RF Plasma Assisted Nitridation with DC Bias. Yoshiki Ishida, Chen Chen, Masataka Hagihara, Hiroaki Shiozawa, Akira Sengoku, Rinpei Hayashibe, Tomohiko Yamakami, Kiichi Kamimura (Shinshu Univ.) CPM2007-118 |
Nitride layer was formed on the surface of 4H-SiC by plasma assisted nitridation. The XPS measurement suggested that the... [more] |
CPM2007-118 pp.69-72 |
CPM |
2007-11-17 10:50 |
Niigata |
Nagaoka University of Technology |
Optical Properties of Cu2ZnSnS4 Bulk Single Crystals and Thin Films Prepared by Sol-Gel and Sulfurization Method Yusuke Miyamoto, Kunihiko Tanaka, Masatoshi Oonuki, Noriko Moritake, Hisao Uchiki (Nagaoka Univ.) CPM2007-119 |
Photoluminescence from Cu2ZnSnS4 (CZTS) thin films and bulk single crystals was studied as a function of excitation powe... [more] |
CPM2007-119 pp.73-77 |
CPM |
2007-11-17 11:15 |
Niigata |
Nagaoka University of Technology |
Cu2ZnSnS4 thin film solar cells prepared by non-vacuum processing of sol-gel and sulfurization method Masatoshi Oonuki, Noriko Moritake, Kunihiko Tanaka, Hisao Uchiki (Nagaoka Univ.) CPM2007-120 |
Cu2ZnSnS4 (CZTS) thin films were prepared by non-vacuum processing of sulfurizing oxhydrate precursors deposited by sol-... [more] |
CPM2007-120 pp.79-82 |
CPM |
2007-11-17 11:40 |
Niigata |
Nagaoka University of Technology |
Fabrication of Three-Dimensional Solar Cell used Cu2ZnSnS4 Prepared by Photo Chemical Deposition. Katsuhiko Moriya, Yusuke Saeki, Kunihiko Tanaka, Hisao Uchiki (Nagaoka Univ. of Tech.) CPM2007-121 |
In order to develop new environmentally friendly solar cells a thin film solar cell of 3D cell structure using Cu2ZnSnS4... [more] |
CPM2007-121 pp.83-87 |
CPM |
2007-11-17 13:15 |
Niigata |
Nagaoka University of Technology |
Characterization of EuGa2S4 Thin films Prepared by Pulsed Laser Deposition Ryohei Kaneta, Kunihiko Tanaka, Hisao Uchiki (Nagaoka Univ. Tech.) CPM2007-122 |
[more] |
CPM2007-122 pp.89-92 |