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Technical Committee on Electron Devices (ED) (Searched in: 2018)
Search Results: Keywords 'from:2018-05-24 to:2018-05-24'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, CPM, SDM | 2018-05-24 13:30 |
Aichi | Toyohashi Univ. of Tech. (VBL) | Fabrication and characterization of flexible organic thermoelectric materials Naoki Kishi, Satoshi Hibi, Yuta Yoshida, Keisuke Ono, Yuma Sawada, Hiroki Kunieda, Yuya Kondo (NITech)  ED2018-14 CPM2018-1 SDM2018-9 |
[more] | ED2018-14 CPM2018-1 SDM2018-9 pp.1-3 |
| ED, CPM, SDM | 2018-05-24 13:55 |
Aichi | Toyohashi Univ. of Tech. (VBL) | Fabrication of Cu-O Thin Films by Galvanostatic Electrochemical Deposition from Weakly Acidic Solutions mansoureh keikhaei, Masaya Ichimura (NIT) ED2018-15 CPM2018-2 SDM2018-10 |
Cu-O thin films are deposited at low pH (< 6), low and high temperatures (10?C and 60?C) using the cathodic electrochemi... [more] | ED2018-15 CPM2018-2 SDM2018-10 pp.5-10 |
| ED, CPM, SDM | 2018-05-24 14:20 |
Aichi | Toyohashi Univ. of Tech. (VBL) | MEMS bio sensor using suspended graphene fabricated by low-pressure dry transfer technique Shin Kidane, Hayato Ishida, Kazuaki Sawada (Toyohashi Univ. of Technol.), Kazuhiro Takahashi (Toyohashi Univ. of Technol./JST-PRESTO) ED2018-16 CPM2018-3 SDM2018-11 |
(To be available after the conference date) [more] | ED2018-16 CPM2018-3 SDM2018-11 pp.11-14 |
| ED, CPM, SDM | 2018-05-24 14:45 |
Aichi | Toyohashi Univ. of Tech. (VBL) | Growth of high quality InSb channel layer with InxGa1-xSb heteroepitaxial films on Si(111) A. A. Mohammad Monzur-Ul-Akhir, Masayuki Mori, Koichi Maezawa (University of Toyama) ED2018-17 CPM2018-4 SDM2018-12 |
InSb has met the requirements of high-performance channel material with faster response towards ultra-fast and very low ... [more] | ED2018-17 CPM2018-4 SDM2018-12 pp.15-18 |
| ED, CPM, SDM | 2018-05-24 15:25 |
Aichi | Toyohashi Univ. of Tech. (VBL) | The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida (Sciocs) ED2018-18 CPM2018-5 SDM2018-13 |
The film thickness of homo epitaxial layers on freestanding GaN substrate was characterized by using Fourier transform ... [more] | ED2018-18 CPM2018-5 SDM2018-13 pp.19-22 |
| ED, CPM, SDM | 2018-05-24 15:50 |
Aichi | Toyohashi Univ. of Tech. (VBL) | Temperature dependence of hydrogen-related donor in FZ-Silicon Akira Kiyoi, Katsumi Nakamura (Mitsubishi Electric Corp.) ED2018-19 CPM2018-6 SDM2018-14 |
Temperature dependence of Hydrogen-related Donor (HD) and silicon self-interstitials has been investigated in order to c... [more] | ED2018-19 CPM2018-6 SDM2018-14 pp.23-28 |
| ED, CPM, SDM | 2018-05-24 16:15 |
Aichi | Toyohashi Univ. of Tech. (VBL) | Reduction of threading dislocation density in Ge layers on Si by introducing tunnel-shaped voids Motoki Yako (Univ. of Tokyo), Yasuhiko Ishikawa (Toyohashi Univ. of Tech.), Kazumi Wada (Massachusetts Inst. Tech.) ED2018-20 CPM2018-7 SDM2018-15 |
[more] | ED2018-20 CPM2018-7 SDM2018-15 pp.29-32 |
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