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Technical Committee on Electron Devices (ED) (Searched in: 2008)
Search Results: Keywords 'from:2009-02-26 to:2009-02-26'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ED | 2009-02-26 13:30 |
Hokkaido | Hokkaido Univ. | [Invited Talk]
Epitaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices Taiichi Otsuji, Tetsuya Suemitsu, Hyon-Choru Kang, Hiromi Karasawa, Yuu Miyamoto, Hiroyuki Handa, Maki Suemitsu (Tohoku Univ.), Eiichi Sano (Hokkaido Univ.), Maxim Ryzhii, Victor Ryzhii (Univ. of Aizu)  ED2008-224 SDM2008-216 |
This paper reviews recent advances in graphene material epitaxially grown on Si substrate and its applications to electr... [more] | ED2008-224 SDM2008-216 pp.1-6 |
| SDM, ED | 2009-02-26 14:10 |
Hokkaido | Hokkaido Univ. | Magnetic properties of Mn-implanyed SOI layers Ｙａｓｕａｋｉ Miyazaki (NTT/Keio Univ.), Yukinori Ono, Hiroyuki Kageshima, Masao Nagase, Akira Fujiwara (NTT), Eiji Ohta (Keio Univ.) ED2008-225 SDM2008-217 |
[more] | ED2008-225 SDM2008-217 pp.7-11 |
| SDM, ED | 2009-02-26 14:35 |
Hokkaido | Hokkaido Univ. | Fabrication and application for Spin injection with Magnetite/InAs heterostructure Takeshi Ejiri, J. Bubesh Babu, Kanji Yoh (Hokkaido Univ.) ED2008-226 SDM2008-218 |
[more] | ED2008-226 SDM2008-218 pp.13-17 |
| SDM, ED | 2009-02-26 15:00 |
Hokkaido | Hokkaido Univ. | Structural transition of InP nanowires grown by selective-area metalorganic vapor phase epitaxy Yusuke Kitauchi, Junichi Motohisa, Yasunori Kobayashi, Takashi Fukui (Hokkaido Univ.) ED2008-227 SDM2008-219 |
[more] | ED2008-227 SDM2008-219 pp.19-22 |
| SDM, ED | 2009-02-26 15:40 |
Hokkaido | Hokkaido Univ. | Feild Emitter Arrays with focusing function and it's applications Yoichiro Neo, Masafumi Takeda, Tomoya Tagami, Syun Horie, Toru Aoki, Hidenori Mimura (Shizuoka Univ.), Tomoya Yoshida, Masayoshi Nagao, Seigo Kanemaru (National Inst.of Adv Ind Scie and Tech.) ED2008-228 SDM2008-220 |
We have developed field emission array (FEA) with new focusing electrode structure and proposed several devices and appl... [more] | ED2008-228 SDM2008-220 pp.23-27 |
| SDM, ED | 2009-02-26 16:05 |
Hokkaido | Hokkaido Univ. | Characteristics of Single Electron Transistor and Turnstile with Input Discretizer Masashi Takiguchi, Shota Hayami, Masaki Otsuka, Akio Kawai, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (The Univ of Electro-Communication) ED2008-229 SDM2008-221 |
In this report, we propose an input discretizer for single-electron devices. The input discretizer comprises one small t... [more] | ED2008-229 SDM2008-221 pp.29-34 |
| SDM, ED | 2009-02-26 16:30 |
Hokkaido | Hokkaido Univ. | Ultrahigh-Speed Comparator with Resonant-Tunneling Diodes Tomohiko Ebata, Uichiro Ohmae, Kazuya Machida, Takao Waho (Sophia Univ.) ED2008-230 SDM2008-222 |
A comparator with resonant tunneling diodes in proposed to reduce the regeneration time. The proposed circuit has been a... [more] | ED2008-230 SDM2008-222 pp.35-40 |
| SDM, ED | 2009-02-26 16:55 |
Hokkaido | Hokkaido Univ. | RTD-Pair Oscillators Integrated on an AlN Ceramic Substrate Koichi Maezawa (Univ. Toyama), Naoki Kamegai, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Kazuhiro Akamatsu (Nippon Mining & Metals Co., Ltd.,) ED2008-231 SDM2008-223 |
The RTD-pair oscillators were designed and fabricated on an AlN ceramic substrate employing novel integration process ba... [more] | ED2008-231 SDM2008-223 pp.41-46 |
| SDM, ED | 2009-02-27 09:00 |
Hokkaido | Hokkaido Univ. | Fabrication of single-Electron Transistors Using Field-Emission-Induced Electromigration Yusuke Tomoda, Watari Kume, Michinobu Hanada, Keisuke Takahashi, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2008-232 SDM2008-224 |
We report a simple and easy technique for the fabrication of single-electron transistors (SETs) consisted of nanogaps wi... [more] | ED2008-232 SDM2008-224 pp.47-52 |
| SDM, ED | 2009-02-27 09:25 |
Hokkaido | Hokkaido Univ. | Dual-dot single-electron transistor fabricated in silicon nanowire Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2008-233 SDM2008-225 |
It is well known that a Si single-electron transistor (SET) is automatically fabricated by means of pattern-dependent ox... [more] | ED2008-233 SDM2008-225 pp.53-58 |
| SDM, ED | 2009-02-27 09:50 |
Hokkaido | Hokkaido Univ. | Silicon Nanowire pMOSFETs and Single-Hole Transistors at Room Temperature under Uniaxial Strain YeonJoo Jeong, Chen Jiezhi, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) ED2008-234 SDM2008-226 |
Uniaxial strain effects on NW pFET and SHT are investigated. In the NW pFET, considerably larger current modulation tha... [more] | ED2008-234 SDM2008-226 pp.59-62 |
| SDM, ED | 2009-02-27 10:15 |
Hokkaido | Hokkaido Univ. | Characterization and Analysis on Operation of GaAs Three-Branch Nanowire Junction Devices Daisuke Nakata, Shaharin Fadzli Abd Rahman, Yuta Shiratori (Hokkaido Univ.), Seiya Kasai (Hokkaido Univ/PRESTO,JST) ED2008-235 SDM2008-227 |
Three-branch nanowire junction devices show nonlinear electrical characteristics from the low temperature to the room te... [more] | ED2008-235 SDM2008-227 pp.63-68 |
| SDM, ED | 2009-02-27 10:55 |
Hokkaido | Hokkaido Univ. | The fourth passive circuit element relating magnetic flux to charge Yoshihito Amemiya, Yasuo Takahashi (Hokkaido Univ.) ED2008-236 SDM2008-228 |
[more] | ED2008-236 SDM2008-228 pp.69-74 |
| SDM, ED | 2009-02-27 11:20 |
Hokkaido | Hokkaido Univ. | Observation of Stochastic Resonance in Nanodevice-integrated Systems Utilizing GaAs-based Nanowire Network and Its Analysis Seiya Kasai (Hokkaido Univ/JST), Tetsuya Asai, Yuta Shiratori, Hong-Quan Zhao (Hokkaido Univ.) ED2008-237 SDM2008-229 |
Stochastic resonance, in which response of a system is improved by adding noise, is successfully observed using field ef... [more] | ED2008-237 SDM2008-229 pp.75-79 |
| SDM, ED | 2009-02-27 11:45 |
Hokkaido | Hokkaido Univ. | Thermoelectric characteristics of Si nanostructures for a high-efficiency thermoelectric device Hiroya Ikeda, Faiz Salleh, Kiyosumi Asai, Akihiro Ishida (Shizuoka Univ.) ED2008-238 SDM2008-230 |
In order to develop a high-efficiency thermoelectric device, we have investigated the thermoelectric characteristic... [more] | ED2008-238 SDM2008-230 pp.81-85 |
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