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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2014)
Search Results: Keywords 'from:2014-10-16 to:2014-10-16'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2014-10-16 14:00 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Performance improvement and present status of IGBT Tomohide Terashima (Mitsubishi Electric Corp.)  SDM2014-84 |
[more] | SDM2014-84 pp.1-6 |
| SDM | 2014-10-16 14:50 |
Miyagi | Niche, Tohoku Univ. | Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.), Yuki Kumagai, Yutaka Kamata, Katsuhiko Shibusawa (LAPIS Semiconductor Miyagi) SDM2014-85 |
Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] | SDM2014-85 pp.7-12 |
| SDM | 2014-10-16 15:20 |
Miyagi | Niche, Tohoku Univ. | A study on Si surface flattening process utilizing atmospheric annealing system Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2014-86 |
It has been reported that the atomically flat surface of Si(100) is able to be obtained by annealing in ultra-pure Ar am... [more] | SDM2014-86 pp.13-17 |
| SDM | 2014-10-16 16:00 |
Miyagi | Niche, Tohoku Univ. | Electrical characteristics of as-deposited HfN gate insulator formed by ECR plasma sputtering Nithi Atthi, Shun-ichiro Ohmi (TokyoTech) SDM2014-87 |
In this paper, the electrical characteristics of as-deposited HfN high- gate insulator formed by electron-cyclot... [more] | SDM2014-87 pp.19-22 |
| SDM | 2014-10-16 16:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Ion Implantation Technologies for Image Sensing Devices Yoji Kawasaki, Genshu Fuse, Makoto Sano, Emi Ooga, Masazumi Koike, Kazuhiro Watanabe, Michiro Sugitani (SEN Corp.) SDM2014-88 |
Some trends of the implantation processing in device fabrication of CMOS image sensors are discussed. Firstly, the varia... [more] | SDM2014-88 pp.23-30 |
| SDM | 2014-10-17 10:00 |
Miyagi | Niche, Tohoku Univ. | Study on compositional transition layers at Si3N4/Si interface formed by radical nitridation Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2014-89 |
The angle-resolved Si 2p photoelectron spectra arising from the transition layers formed on the Si3N4/Si interface were ... [more] | SDM2014-89 pp.31-34 |
| SDM | 2014-10-17 10:40 |
Miyagi | Niche, Tohoku Univ. | Initial stage of oxidation on 4H-SiC by AR-XPS using angle-resolved X-ray photoelectron spectroscopy Tomoya Sasago, Shunta Yamahori, Hiroshi Nohira (Tokyo City Univ.) SDM2014-90 |
We have investigated the initial stage of oxidation on C-face 4H-SiC using angle-resolved X-ray photoelectron spectrosco... [more] | SDM2014-90 pp.35-39 |
| SDM | 2014-10-17 11:10 |
Miyagi | Niche, Tohoku Univ. | Epitaxial Growth of Ge and Ge1-xSnx Films by MOCVD Kohei Suda, Seiya Ishihara, Takahiro Kijima, Naomi Sawamoto (Meiji Univ.), Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh (Gas-phase Growth), Yoshio Oshita (Toyota Technological Inst.), Atsushi Ogura (Meiji Univ.) SDM2014-91 |
Ge and Ge1-xSnx are attractive materials for the next-generation transistors and optical devices. We achieved to grow ... [more] |
SDM2014-91 pp.41-45 |
| SDM | 2014-10-17 13:00 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Analysis of Multi-Trap Random Telegraph Noise Using Charging History Effects in Nano-Scaled MOSFETs Toshiaki Tsuchiya (Shimane Univ.) SDM2014-92 |
We propose a novel method for analyzing random telegraph noise (RTN) by using charging history effects on the traps part... [more] | SDM2014-92 pp.47-54 |
| SDM | 2014-10-17 13:50 |
Miyagi | Niche, Tohoku Univ. | Analysis of trap density causing random telegraph noise in MOSFETs Toshiki Obara, Akinobu Teramoto, Rihito Kuroda, Akihiro Yonezawa, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2014-93 |
The incidence ratio of Random Telegraph Noise in 131,072 MOSFETs was evaluated statistically by using array test circuit... [more] | SDM2014-93 pp.55-59 |
| SDM | 2014-10-17 14:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Back-Bias Control technique for Suppression of Die-to-Die Delay Variability of SOTB MOS Circuits at Ultralow-Voltage (0.4 V) Operation Hideki Makiyama, Yoshiki Yamamoto, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Yasuo Yamaguchi (LEAP), Koichiro Ishibashi (Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (Univ. of Tokyo) SDM2014-94 |
Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] | SDM2014-94 pp.61-68 |
| SDM | 2014-10-17 15:20 |
Miyagi | Niche, Tohoku Univ. | Design method of stacked type NAND MRAM Shigeyoshi Watanabe (Shonan Inst. of Tech), Shoto Tamai (Oi Electric Co. LTD.) SDM2014-95 |
[more] | SDM2014-95 pp.69-74 |
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