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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2008)
Search Results: Keywords 'from:2008-11-13 to:2008-11-13'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM [detail] | 2008-11-13 13:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Circuit designs of Analog Circuits in Advanced System LSIs Shiro Dosho, Shiro Sakiyama, Takashi Morie, Kazuo Matsukawa (Matsushita Electric Co. Ltd.)  SDM2008-169 |
[more] | SDM2008-169 pp.1-8 |
| SDM [detail] | 2008-11-13 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Circuit Design and Device Modeling for Millimeter-Wave CMOS Applications Minoru Fujishima (Univ. of Tokyo) SDM2008-170 |
Millimeter-wave CMOS circuits are receiving attention. In particular, since communication using 60GHz band realizes high... [more] | SDM2008-170 pp.9-14 |
| SDM [detail] | 2008-11-13 15:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A 13.75ns fast holographic reconfiguration Mao Nakajima, Minoru Watanabe (Shizuoka Univ.) SDM2008-171 |
[more] | SDM2008-171 pp.15-20 |
| SDM [detail] | 2008-11-13 15:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Fault tolerance of the holographic memory in the large scale opptically reconfigurable gate array. Daisaku Seto, Minoru Watanabe (Shizuoka Univ.) SDM2008-172 |
[more] | SDM2008-172 pp.21-26 |
| SDM [detail] | 2008-11-14 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A 3D simulator for designing next generation semiconductor devices, Part 1
-- Development of a strongly stable simulator -- Shogo Sakurai, Zhu Riming, Masahiro Sato, Ken Yamaguchi (AdvanceSoft Corp.) SDM2008-173 |
In listed requirements of device simulator for designing of semiconductor devices in next generation, we focus on one of... [more] | SDM2008-173 pp.27-32 |
| SDM [detail] | 2008-11-14 10:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A 3D silumator for designing next generation semiconductor devices, Part2
-- Quick generators of 3D structures and high-quaulity meshes -- Zhu Riming, Masahiro Sato, Shogo Sakurai, Ken Yamaguchi (AdvanceSoft Corp.) SDM2008-174 |
[more] | SDM2008-174 pp.33-36 |
| SDM [detail] | 2008-11-14 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Discretization Method of Quantum Drift-Diffusion Model for Time-Dependent Device Simulations Tomoko Shimada, Shinji Odanaka (Osaka Univ.) SDM2008-175 |
[more] | SDM2008-175 pp.37-42 |
| SDM [detail] | 2008-11-14 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of Non-parabolic Band on Threshold Voltage Shift of Nano-sacle SOI MOSFET
-- Proposal of Model and Examination of its Availability -- Daisuke Kyokane, Yasuhisa Omura (Kansai Univ.) SDM2008-176 |
[more] | SDM2008-176 pp.43-48 |
| SDM [detail] | 2008-11-14 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
LDMOS Device Modeling and Circuit Design
-- Device Modeling for Circuit Design -- Hirobumi Watanabe, Takaaki Negoro (Ricoh Co. Ltd.) SDM2008-177 |
[more] | SDM2008-177 pp.49-54 |
| SDM [detail] | 2008-11-14 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
[Invited]Robust Design of Embedded SRAM on Deep-submicron Technology Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Hirofumi Shinohara (Renesas Technology Corp.) SDM2008-178 |
We develop high-density SRAM module in deep-submicron CMOS technology with the variation tolerant assist circuits agains... [more] | SDM2008-178 pp.55-60 |
| SDM [detail] | 2008-11-14 15:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Quantum Mechanical Study of Effect of Single Attractive Ions on Electron Transport in Nanoscale Transistors Yoshinari Kamakura, Gennady Mil'nikov, Nobuya Mori (Osaka Univ.), Tatsuya Ezaki (Hiroshima Univ.) SDM2008-179 |
A comprehensive and rigorous study of the impact of single attractive ion in undoped channel MGFETs is presented by usin... [more] | SDM2008-179 pp.61-66 |
| SDM [detail] | 2008-11-14 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Three-dimensional NEGF simulation of gate tunnel current in ultra-small MOSFETs Hideki Minari, Daisuke Nishitani, Nobuya Mori (Osaka Univ.) SDM2008-180 |
We have numerically studied gate-tunneling in ultra-small MOSFETs within a three-dimensional nonequilibrium Green’s func... [more] | SDM2008-180 pp.67-70 |
| SDM [detail] | 2008-11-14 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | High-field Transport in Silicon Analyzed by Flux Equation Naohito Morozumi, Kenji Natori (Univ. of Tsukuba) SDM2008-181 |
The influence of the energy relaxation due to the optical phonon emission on the high-field transport property is invest... [more] | SDM2008-181 pp.71-76 |
| SDM [detail] | 2008-11-14 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Three-Dimensional Quantum Transport Simulation of Si-Nanowire Transistors Yoshihiro Yamada, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2008-182 |
Si-nanowire transistors (SNWTs) are promising candidates as extremely downscaled MOSFETs for the future Si-VLSIs. To und... [more] | SDM2008-182 pp.77-82 |
| SDM [detail] | 2008-11-14 16:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | First-Principles Simulation of Electronic Bandstructures on Nanoscaled-Si Channels with Strain Effects Tadashi Maegawa, Tsuneki Yamauchi, Takeshi Hara, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2008-183 |
In this paper, we present a comparative computational study on strain effects in Si nanostructures including bulk, thin ... [more] | SDM2008-183 pp.83-88 |
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