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 Results 21 - 26 of 26 [Previous]  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2011-11-11
13:50		 Tokyo Kikai-Shinko-Kaikan Bldg. Investigation of Scaling Limit Due to Short Channel Effects and Channel Boosting Leakage in Bulk and SOI NAND Flash Memory Cells
Kousuke Miyaji, Chinglin Hung, Ken Takeuchi (Univ. of Tokyo) SDM2011-125		  [more] SDM2011-125
pp.57-61
ICD 2011-04-19
11:45		 Hyogo Kobe University Takigawa Memorial Hall Suppress of Half Select Disturb in 8T-SRAM by Local Injected Electron Asymmetric Pass Gate Transistor
Kousuke Miyaji, Kentaro Honda, Shuhei Tanakamaru (Univ. of Tokyo), Shinji Miyano (STARC), Ken Takeuchi (Univ. of Tokyo) ICD2011-13		 8T-SRAM cell with asymmetric pass gate transistor by local electron injection is proposed to solve half select disturb. ... [more] ICD2011-13
pp.71-76
ICD 2010-12-16
09:30		 Tokyo RCAST, Univ. of Tokyo Elimination of Half Select Disturb in 8T-SRAM by Local Injected Electron Asymmetric Pass Gate Transistor
Kentaro Honda, Kousuke Miyaji, Shuhei Tanakamaru (Univ. of Tokyo), Shinji Miyano (STARC), Ken Takeuchi (Univ. of Tokyo) ICD2010-95		 8T-SRAM cell with asymmetric pass gate transistor by local electron injection is proposed to solve half select disturb. ... [more] ICD2010-95
pp.1-6
ICD, SDM 2010-08-27
09:25		 Hokkaido Sapporo Center for Gender Equality A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD
Kousuke Miyaji, Shinji Noda, Teruyoshi Hatanaka (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) SDM2010-139 ICD2010-54		 A Single-Cell Self-Boost (SCSB) program scheme is proposed to achieve a 1.0V power supply operation in Ferroelectric (Fe... [more] SDM2010-139 ICD2010-54
pp.83-88
ICD, SDM 2010-08-27
13:45		 Hokkaido Sapporo Center for Gender Equality 70% Read Margin Enhancement by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection
Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda (Univ. of Tokyo), Shinji Miyano (STARC), Ken Takeuchi (Univ. of Tokyo) SDM2010-145 ICD2010-60		 A VTH mismatch self-repair scheme in 6T-SRAM with asymmetric PG transistor by post-process local electron injection is p... [more] SDM2010-145 ICD2010-60
pp.115-120
SDM 2010-06-22
15:15		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo 70% Read Margin Enhancement by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection
Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda (Univ. of Tokyo), Shinji Miyano (STARC), Ken Takeuchi (Univ. of Tokyo) SDM2010-44		 A VTH mismatch self-repair scheme in 6T-SRAM with asymmetric PG transistor by post-process local electron injection is p... [more] SDM2010-44
pp.61-65
 Results 21 - 26 of 26 [Previous]  /   
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