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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-10-13
15:10		 Miyagi Niche, Tohoku Univ. [Invited Talk] statistical analysis of random telegraphic noise dependence on operating condition using electrical characteristic measurement platform
Takezo Mawaki, Rihito Kuroda (Tohoku Univ.) SDM2023-57		 We refer to the overall measurement system composed of array test circuits and other equipment as the electrical charact... [more] SDM2023-57
pp.21-26
SDM 2022-10-19
11:10		 Online Online Resistance Masurement Technology for Statistical Analysis of Thin Films Materials for Emerging Memory with High Accuracy and Wide Range
Hidemi Mitsuda, Ryousuke Tenman, Takezou Mawaki, Rihito Kuroda (Tohoku Univ) SDM2022-55		 We report on a resistance measurement circuit that enables accurate, wide-range, and statistical evaluation of various t... [more] SDM2022-55
pp.5-8
SDM 2021-10-21
16:25		 Online Online Statistical analysis of RTN behavior on transistor structure, operating region, and carrier transport direction
Ryo Akimoto, Rihito Kuroda, Takezo Mawaki, Shigotoshi Sugawa (Tohoku Univ.) SDM2021-52		  [more] SDM2021-52
pp.27-32
SDM 2021-06-22
13:10		 Online Online [Memorial Lecture] Modification of states of metal copper and copper oxide due to isopropyl alcohol treatment
Takezo Mawaki (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Katsutoshi Ishii (Tokyo Electron Technology Solutions), Yoshinobu Shiba, Tomoyuki Suwa (Tohoku Univ.), Shuji Azumo, Akira Shimizu, Kota Umezawa (Tokyo Electron Technology Solutions), Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku Univ.) SDM2021-22		 The reduction of copper oxide by isopropyl alcohol (IPA) gas and its mechanism were investigated toward the selective pr... [more] SDM2021-22
pp.1-6
SDM 2020-10-22
14:50		 Online Online Modification of states of copper and copper oxide due to IPA treatment
Takezo Mawaki (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Katsutoshi Ishii (Tokyo Electron Technology Solutions), Yoshinobu Shiba, Tomoyuki Suwa (Tohoku Univ.), Shuji Azumo, Akira Shimizu, Kota Umezawa (Tokyo Electron Technology Solutions), Rihito Kuroda, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku Univ.) SDM2020-19		 The reduction of copper oxide by isopropyl alcohol (IPA) gas and its mechanism were investigated toward the selective pr... [more] SDM2020-19
pp.25-29
SDM 2020-10-22
15:50		 Online Online Effect of Drain-to-Source Voltage on Random Telegraph Noise Based on Statistical Analysis
Ryo Akimoto, Rihito Kuroda (Tohoku Univ.), Akinobu Teramoto (Hiroshima Univ.), Takezo Mawaki, Shinya Ichino, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2020-21		 In this work, temporal noise characteristics of 11520 MOSFETs were measured for each of rectangular and trapezoidal shap... [more] SDM2020-21
pp.34-39
SDM 2018-10-18
14:00		 Miyagi Niche, Tohoku Univ. Statistical Analysis of Electric Characteristics Variability Using MOSFETs with Asymmetric Source and Drain
Shinya Ichino, Akinobu Teramoto, Rihito Kuroda, Takezo Mawaki, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2018-62		 In this paper, a statistical analysis of electric characteristics variabilities such as threshold voltage variability an... [more] SDM2018-62
pp.51-56
SDM 2017-10-26
14:00		 Miyagi Niche, Tohoku Univ. Analysis of Random Telegraph Noise Behaviors toward Changes of Source Follower Transistor Operation Conditions using High Accuracy Array Test Circuit
Shinya Ichino, Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shunichi Wakashima, Shigetoshi Sugawa (Tohoku Univ.) SDM2017-60		 Behaviors of random telegraph noise (RTN) occurs at CMOS image sensors’ in-pixel source follower transistors (SF) toward... [more] SDM2017-60
pp.57-62
SDM 2016-10-27
10:50		 Miyagi Niche, Tohoku Univ. Behavior of Random Telegraph Noise toward Bias Voltage Changing
Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shinya Ichino, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2016-75		 As the progression of MOSFETs scaling down continues, the impacts of RTN (Random Telegraph Noise) on the MOSFETs have be... [more] SDM2016-75
pp.35-38
 Results 1 - 9 of 9  /   
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