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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
EID, SDM, ITE-IDY [detail] |
2018-12-25 13:15 |
Kyoto |
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Effects of SiOx Capping Film on Crystallization of Ge Film for Flash Lamp Annealing (Ⅱ) Yoshiki akita, Naoto Matsuo (Univ. of Hyogo), Kazuyuki Kohama, Kazuhiro Ito (Osaka Univ.) EID2018-5 SDM2018-78 |
We examined the effect of SiOx capping film on Ge films in FLA. The crystallinity was different between SPC and LPC. At ... [more] |
EID2018-5 SDM2018-78 pp.17-20 |
SDM, EID |
2017-12-22 16:00 |
Kyoto |
Kyoto University |
Effect of SiOx capping film on crystallization of Ge film by flash lamp annealing Naoki Yoshioka, Yoshiki Akita, Akira Heya, Naoto Matsuo (Univ of Hyogo), Kazuyuki Kohama, Kazuhiro Itou (Osaka Univ) EID2017-26 SDM2017-87 |
[more] |
EID2017-26 SDM2017-87 pp.77-80 |
SDM, EID |
2014-12-12 16:00 |
Kyoto |
Kyoto University |
Formation of nc-Si in SiOx by Soft X-ray Irradiation Fumito Kusakabe, Shota Hirano, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Takayasu Mochizuki, Shuji Miyamoto (Univ. of Hyogo), Kazuyuki Kohama, Kazuhiro Ito (Osaka Univ.) EID2014-32 SDM2014-127 |
[more] |
EID2014-32 SDM2014-127 pp.99-102 |
SDM |
2011-02-07 13:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Dependence of Ti-Based Self-Formed Barrier Structure on Dielectric-Layer Composition Kazuyuki Kohama, Kazuhiro Ito, Yutaka Sonobayashi (Kyoto Univ.), Kazuyuki Ohmori, Kenichi Mori, Kazuyoshi Maekawa (Renesas), Yasuharu Shirai (Kyoto Univ.), Masanori Murakami (The Ritsumeikan) SDM2010-221 |
Ti-based self-formed barrier layer using Cu(Ti) alloy seed applied to 45 nm-node dual-damascene interconnects was report... [more] |
SDM2010-221 pp.31-35 |
SDM |
2010-02-05 14:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Performance of Cu Dual-Damascene Interconnects Using a Thin Ti-Based Self-Formed Barrier Layer for 28-nm Node and Beyond K. Ohmori, K. Mori, K. Maekawa (Renesas), Kazuyuki Kohama, Kazuhiro Ito (Kyoto Univ.), T. Ohnishi, M. Mizuno (KOBE STEEL), K. Asai (Renesas), M. Murakami (Ritsumeikan Trust), Hiroshi Miyatake (Renesas) SDM2009-188 |
With continuous shrinkage of advanced ULSIs, the impact of line resistance on the devices has become more and more serio... [more] |
SDM2009-188 pp.37-41 |
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