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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, CPM, ED 2017-11-30
15:50		 Aichi Nagoya Inst. tech. Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices
Keisuke Uemura, Satoru Matsumoto, Masachika Toguchi, Keisuke Ito, Taketomo Sato (Hokkaido Univ.) ED2017-54 CPM2017-97 LQE2017-67		 The photo-electrochemical oxidation and etching process was demonstrated in view of the damage-free etching for GaN and ... [more] ED2017-54 CPM2017-97 LQE2017-67
pp.23-26
SDM 2012-10-26
13:50		 Miyagi Tohoku Univ. (Niche) Ultra high speed wet etching technology for a silicon wafer process
Takeshi Sakai, Tatsuro Yoshida, Kazuhiro Yoshikawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-97		 The silicon wafer thinning technology is important in three-dimensional integrated technology. In this paper, we conside... [more] SDM2012-97
pp.41-45
SDM 2009-10-29
15:30		 Miyagi Tohoku University Silicon Wafer Thinning Technology for Three-Dimensional Integrated Circuit by Wet Etching
Kazuhiro Yoshikawa, Tomotsugu Ohashi, Tatsuro Yoshida, Takenao Nemoto, Tadahiro Ohmi (Tohoku Univ.) SDM2009-120		 A three-dimensional integrated circuit is developed as an emerging technology in a semiconductor industry. The silicon w... [more] SDM2009-120
pp.15-19
SDM, ED 2008-07-11
15:20		 Hokkaido Kaderu２・７ Characterization of Ni/i-AlGaN/GaN Schottky Samples Fabricated after H3PO4-Etching
Takayuki Sawada, Yuta Kaizuka, Kensuke Takahashi, Kazuaki Imai (Hokkaido Inst. of Tech.) ED2008-107 SDM2008-126		 Electrical properties of bare i-AlGaN/GaN and Ni/i-AlGaN/GaN Schottky samples with various thickness of the AlGaN layer,... [more] ED2008-107 SDM2008-126
pp.351-355
 Results 1 - 4 of 4  /   
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