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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2022-01-31 16:00 |
Online |
Online |
[Invited Talk]
**** Keiichi Nakazawa, Junpei Yamamoto, Shigetaka Mori, Shintaro Okamoto, Akito Shimizu, Koichi Baba, Nobutoshi Fujii, Mutsuo Uehara, Katsunori Hiramatsu, Hideomi Kumano, Akira Matsumoto, Koichiro Zaitsu, Hidetoshi Ohnuma, Keiji Tatani, Tomoyuki Hirano, Hayato Iwamoto (Sony Semiconductor Solutions) SDM2021-73 |
We developed a new structure of pixel transistors stacked over photodiode named “2-Layer Transistor Pixel Stacked CMOS I... [more] |
SDM2021-73 pp.20-23 |
CPM, LQE, ED |
2016-12-13 11:20 |
Kyoto |
Kyoto University |
Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip Kazuaki Tsuchiyama, Shu Utsuhomiya, Shota Nakagawa, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) ED2016-73 CPM2016-106 LQE2016-89 |
A Si/SiO2/GaN-LED structure was fabricated by surface activated bonding method, and a GaN-µLED driver circuit consi... [more] |
ED2016-73 CPM2016-106 LQE2016-89 pp.79-83 |
SDM |
2015-03-02 10:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
[Invited Talk]
Integration Technology of 3D FPGA with Performance Scalability and Function Flexibility Kenichi Takeda, Mayu Aoki (Hitachi) SDM2014-163 |
Three-layer stacked wafer with CMOS devices was demonstrated by using hybrid wafer bonding and via-last through silicon ... [more] |
SDM2014-163 pp.7-11 |
SDM |
2014-01-29 15:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
3D Integrated CMOS Device by Using Wafer Stacking and Via-last TSV Mayu Aoki, Futoshi Furuta, Kazuyuki Hozawa, Yuko Hanaoka, Kenichi Takeda (Hitachi) SDM2013-145 |
A three-layer-stacked wafer with CMOS devices was fabricated for the first time by using hybrid wafer bonding and backsi... [more] |
SDM2013-145 pp.43-46 |
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