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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-11-10
14:40		 Tokyo
(Primary: On-site, Secondary: Online)		 [Invited Talk] Characterization of Physical Properties in GaN under High Electric Field -- Impact Ionization Coefficients and Critical Electric Field --
Takuya Maeda (UTokyo) SDM2023-72		 The accurate device simulation and prediction of the safe operating region for power devices require precise values of m... [more] SDM2023-72
pp.41-46
OPE 2017-12-07
10:50		 Okinawa   Fabrication of vertical PN junction phase shifter for Si optical modulator based on strip loaded waveguide
Yuriko Maegami, Guangwei Cong, Morifumi Ohno, Makoto Okano (AIST), Kazuto Itoh, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech), Koji Yamada (AIST) OPE2017-92		 We fabricate a silicon optical phase shifter based on hydrogenated amorphous silicon (a-Si:H) strip-loaded waveguides on... [more] OPE2017-92
pp.13-18
EID, ITE-IDY, IEE-EDD, IEIJ-SSL, SID-JC [detail] 2017-01-26
15:39		 Tokushima Tokushima Univ. DC Biased Inorganic Electroluminescent Devices Having Cu2O Semiconductor
Kantarou Suzuki, Kunitoshi Yanagihara, Noboru Miura (Meiji Univ.) EID2016-37		 In order to achieve high efficient electroluminescence (EL), impact-excitation type EL device in which DC electric field... [more] EID2016-37
pp.49-52
SDM, ED 2009-06-25
11:30		 Overseas Haeundae Grand Hotel, Busan, Korea Formation and application of InP porous structures on p-n substrates
Taketomo Sato, Naoki Yoshizawa, Hiroyuki Okazaki, Tamotsu Hashizume (Hokkaido Univ.) ED2009-76 SDM2009-71		 We demonstrated to form InP porous structures on n-type epitaxial layers grown on p-type (001) substrates. The high-dens... [more] ED2009-76 SDM2009-71
pp.117-120
OME 2008-12-11
13:25		 Tokyo Kikai-Shinko-Kaikan Bldg. VI characteristics of organic semiconductors by using CTAB
Yu Kawaguchi, Atsumi Ozawa, Hajime Imai (Japan Women's Univ.) OME2008-77		 We have evaluated organic semiconductors using the surfactant material that is n-Cethyl-trymethyl-ammonium Bromid:CTAB t... [more] OME2008-77
pp.7-11
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