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Technical Committee on Component Parts and Materials (CPM) (Searched in: 2012)
Search Results: Keywords 'from:2012-11-29 to:2012-11-29'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, LQE, CPM | 2012-11-30 14:05 |
Osaka | Osaka City University | Fabrication of Si-doped AlGaN multiple-quantum wells by low-pressure MOVPE and its application for deep-UV-light-source Shunsuke Ochiai, Mayuna Takagi (Mie Univ.), Fumitsugu Fukuyo (Mie Univ. /HAMAMATSU PHOTONICS), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuji Kobayashi, Harumasa Yoshida (HAMAMATSU PHOTONICS)  ED2012-85 CPM2012-142 LQE2012-113 |
AlxGa1-xN alloy has attracted significant attention owing to its emission covering the wavelength range from 210 to 365 ... [more] | ED2012-85 CPM2012-142 LQE2012-113 pp.93-96 |
| ED, LQE, CPM | 2012-11-30 14:30 |
Osaka | Osaka City University | Analysis of band structure and Auger recombination process in wurtzite InGaN Gen-ichi Hatakoshi, Shinya Nunoue (Toshiba) ED2012-86 CPM2012-143 LQE2012-114 |
A characteristic feature of the wurtzite semiconductor is the existence of a higher conduction band having the energy di... [more] | ED2012-86 CPM2012-143 LQE2012-114 pp.97-101 |
| ED, LQE, CPM | 2012-11-30 14:55 |
Osaka | Osaka City University | The Effect of Carrier Transport and Thermal Activation Processes on Non-radiative Carrier Recombination Processes in InN Films Daichi Imai, Yoshihiro Ishitani (Chiba Univ.), Xinqiang Wang (Peking Univ.), Kazuhide Kusakabe, Akihiko Yoshikawa (Chiba Univ. SMART) ED2012-87 CPM2012-144 LQE2012-115 |
Carrier transition processes via deep states leading to the reduction of the band edge radiative recombination efficienc... [more] | ED2012-87 CPM2012-144 LQE2012-115 pp.103-108 |
| ED, LQE, CPM | 2012-11-30 15:35 |
Osaka | Osaka City University | Fabrication of radial InP/InAsP quantum wells on InP nanowires for near-infrared optical devices Kenichi Kawaguchi, Yoshiaki Nakata, Mitsuru Ekawa, Tsuyoshi Yamamoto (Fujitsu Lab.), Yasuhiko Arakawa (Univ. of Tokyo) ED2012-88 CPM2012-145 LQE2012-116 |
InP-based nanowire (NW) heterostructures have attracted attentions as a building block for fabricating nano-scale light ... [more] | ED2012-88 CPM2012-145 LQE2012-116 pp.109-112 |
| ED, LQE, CPM | 2012-11-30 16:00 |
Osaka | Osaka City University | Growth of InAs-QDs emitting at 1um with a broadband spectrum via In-flush method for biomedical imaging Yuji Hino, Nobuhiko Ozaki (Wakayama Univ.), Shunsuke Ohkouchi (NEC Corp.), Naoki Ikeda, Yoshimasa Sugimoto (NIMS) ED2012-89 CPM2012-146 LQE2012-117 |
We have grown self-assembled InAs quantum dots (QDs) on a GaAs substrate emitting at around 1.05um in wavelength using t... [more] | ED2012-89 CPM2012-146 LQE2012-117 pp.113-116 |
| ED, LQE, CPM | 2012-11-30 16:25 |
Osaka | Osaka City University | Study on inductively-coupled-plasma-dry-etching-mask for AlGaAs photonic crystal fabrication Yuji Togano, Yuta Kitabayashi, Fumitaro Ishikawa, Masahiko Kondow (Osaka Univ.) ED2012-90 CPM2012-147 LQE2012-118 |
We investigate inductively coupled plasma etching mask of Al-rich AlGaAs for photonic crystal (PC) fabrication. This stu... [more] | ED2012-90 CPM2012-147 LQE2012-118 pp.117-120 |
| ED, LQE, CPM | 2012-11-30 16:50 |
Osaka | Osaka City University | Development of Ge Light Emitter for Monolithic Light Source Kazuki Tani, Shin-ichi Saito, Katsuya Oda (PETRA), Tadashi Okumura, Toshiyuki Mine (Hitachi), Tatemi Ido (PETRA) ED2012-91 CPM2012-148 LQE2012-119 |
For the purpose of realization of monolithic light sources on a silicon chip, Ge epitaxial growth technique was investig... [more] | ED2012-91 CPM2012-148 LQE2012-119 pp.121-124 |
| ED, LQE, CPM | 2012-11-30 17:15 |
Osaka | Osaka City University | Design of an optical spectrum control circuit and flattening its transmission spectrum with phase error compensation Tatsuhiko Ikeda (Keio Univ.), Takayuki Mizuno, Hiroshi Takahashi (NTT), Hideaki Asakura, Hiroyuki Tsuda (Keio Univ.) ED2012-92 CPM2012-149 LQE2012-120 |
We designed and fabricated an arrayed-waveguide grating (AWG) type high-resolution optical spectrum control circuit usin... [more] | ED2012-92 CPM2012-149 LQE2012-120 pp.125-129 |
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