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Technical Committee on Silicon Device and Materials (SDM) (Searched in: 2021)
Search Results: Keywords 'from:2021-11-11 to:2021-11-11'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2021-11-11 10:00 |
Online | Online | [Invited Talk]
New Development of Silicon IGBT
-- Scaling IGBT and Double-Gate IGBT -- Toshiro Hiramoto, Takuya Saraya (UTokyo)  SDM2021-53 |
A silicon IGBT (Insulated Gate Bipolar Transistors) still remains the main stream power transistor and is widely used in... [more] | SDM2021-53 pp.1-6 |
| SDM | 2021-11-11 11:00 |
Online | Online | [Invited Talk]
Non-Normal Model Parameter Generation for Variation-Aware Circuit Simulation Takashi Sato, Hiroki Tsukamoto, Song Bian (Kyoto Univ.), Michihiro Shintani (NAIST) SDM2021-54 |
[more] | SDM2021-54 pp.7-12 |
| SDM | 2021-11-11 13:00 |
Online | Online | [Invited Talk]
Prospects of HfZrO2-based FeFETs for Ultra-low Power Memory, Logic and AI Applications Shinichi Takagi, Kasidit Toprasertpong, Xuan Luo, Eishin Nako, Zeyu Wang, Tsung-En Lee, Kento Tahara, Mitsuru Takenaka, Ryosho Nakane (U. Tokyo) SDM2021-55 |
Since the discovery of ferroelectricity in HfO2-based dielectric films in 2011, FeFETs using HfO2-based thin films as ga... [more] | SDM2021-55 pp.13-18 |
| SDM | 2021-11-11 14:00 |
Online | Online | [Invited Talk]
Study on the efficient erase opeartion in ferroelectric HfO2 FeFET toward 3D vertical structure Masaharu Kobayashi, Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo), Chun-Jung Su (TSRI), Vita Pi-Ho Hu (NTU) SDM2021-56 |
(To be available after the conference date) [more] | SDM2021-56 pp.19-22 |
| SDM | 2021-11-11 15:15 |
Online | Online | [Invited Talk]
Characterization techniques of plasma process-induced defect creation in electronic devices Koji Eriguchi (Kyoto Univ.) SDM2021-57 |
Plasma processing plays an important role in manufacturing leading-edge electronic devices. Plasma etching achieves fine... [more] | SDM2021-57 pp.23-28 |
| SDM | 2021-11-11 16:15 |
Online | Online | A threshold voltage definition based on a standardized charge vs. voltage relationship Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo) SDM2021-58 |
Threshold voltage defined by a band bending of twice the substrate intrinsic-to-Fermi level difference has been widely a... [more] | SDM2021-58 pp.29-32 |
| SDM | 2021-11-11 16:40 |
Online | Online | [Invited Talk]
SISPAD2021 Review Hideki Minari (Sony Semiconductor Solutions) SDM2021-59 |
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) was held on September 27-29,... [more] | SDM2021-59 pp.33-37 |
| SDM | 2021-11-12 09:30 |
Online | Online | [Invited Talk]
Formation of high-quality SiC/SiO2 interfaces by suppressing carbon defects Takuma Kobayashi (Kyoto Univ./Tokyo Tech), Takafumi Okuda, Keita Tachiki, Koji Ito (Kyoto Univ.), Yu-ichiro Matsushita (Tokyo Tech), Tsunenobu Kimoto (Kyoto Univ.) SDM2021-60 |
SiC MOSFETs are promising in high-voltage power applications. However, the performance of MOSFETs has been limited by th... [more] | SDM2021-60 pp.38-42 |
| SDM | 2021-11-12 10:30 |
Online | Online | [Invited Talk]
Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport Tomoya Nishimura, Katsumi Eikyu, Kenichiro Sonoda, Tamotsu Ogata (Renesas Electronics) SDM2021-61 |
SiC is expected to be the next-generation semiconductor material especially for power devices, and some have been put in... [more] | SDM2021-61 pp.43-46 |
| SDM | 2021-11-12 11:30 |
Online | Online | [Invited Talk]
Modeling of Temperature Dependent Mobility of GaN HEMTs by Cellular Automaton Koichi Fukuda, Junichi Hattori, Hidehiro Asai (AIST), Yaita Junya, Junji Kotani (Fujitsu) SDM2021-62 |
A cellular automaton method is applied to temperature-dependent mobility modeling of GaN HEMT. The method utilizes numer... [more] | SDM2021-62 pp.47-52 |
| SDM | 2021-11-12 13:30 |
Online | Online | [Invited Talk]
Synthesis of turbostratic multilayer graphene nanoribbon and its electrical transport properties Ryota Negishi (Toyo Univ.) SDM2021-63 |
[more] | SDM2021-63 pp.53-59 |
| SDM | 2021-11-12 14:30 |
Online | Online | [Invited Talk]
A Theoretical Study on Strain-Induced Change of Schottky Energy Barrier of Dumbbell-Shape Graphene-Nanoribbons for Highly Sensitive Strain Sensors Qinqiang Zhang, Ken Suzuki, Hideo Miura (Tohoku Univ.) SDM2021-64 |
The strain-induced change of electronic properties in the proposed dumbbell-shape graphene nanoribbon (DS- GNR) structur... [more] | SDM2021-64 pp.60-65 |
| SDM | 2021-11-12 15:45 |
Online | Online | [Invited Talk]
Acceleration of nonequilibrium Green's function simulation for nanoscale devices by applying machine-learning model Satofumi Souma (Kobe Univ.) SDM2021-65 |
In device simulation based on the non-equilibrium Green's function method, the calculation of the non-equilibrium space ... [more] | SDM2021-65 pp.66-71 |
| SDM | 2021-11-12 16:45 |
Online | Online | Simulation of Phonon Transport in Si Nanowires with Physics Informed Neural Networks Yuma Fujita, Yuhei Suzuki, Yoshinari Kamakura (Osaka Inst. Technol.) SDM2021-66 |
The temperature distribution was calculated for Si with a dogbone structure by solving the phonon-Boltzmann transport eq... [more] | SDM2021-66 pp.72-76 |
| SDM | 2021-11-12 17:10 |
Online | Online | Inference of MOSFET Characteristics and Parameters with Machine Learning Kohei Akazawa, Yuigo Nakanishi, Yuhei Suzuki, Yoshinari Kamakura (Osaka Inst. Technol.) SDM2021-67 |
A machine learning method to extract SPICE model parameters is discussed. The data set is obtained from SPICE simulatio... [more] | SDM2021-67 pp.77-80 |
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