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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, CPM, ED |
2017-11-30 15:50 |
Aichi |
Nagoya Inst. tech. |
Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices Keisuke Uemura, Satoru Matsumoto, Masachika Toguchi, Keisuke Ito, Taketomo Sato (Hokkaido Univ.) ED2017-54 CPM2017-97 LQE2017-67 |
The photo-electrochemical oxidation and etching process was demonstrated in view of the damage-free etching for GaN and ... [more] |
ED2017-54 CPM2017-97 LQE2017-67 pp.23-26 |
SDM |
2012-10-26 13:50 |
Miyagi |
Tohoku Univ. (Niche) |
Ultra high speed wet etching technology for a silicon wafer process Takeshi Sakai, Tatsuro Yoshida, Kazuhiro Yoshikawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-97 |
The silicon wafer thinning technology is important in three-dimensional integrated technology. In this paper, we conside... [more] |
SDM2012-97 pp.41-45 |
SDM |
2009-10-29 15:30 |
Miyagi |
Tohoku University |
Silicon Wafer Thinning Technology for Three-Dimensional Integrated Circuit by Wet Etching Kazuhiro Yoshikawa, Tomotsugu Ohashi, Tatsuro Yoshida, Takenao Nemoto, Tadahiro Ohmi (Tohoku Univ.) SDM2009-120 |
A three-dimensional integrated circuit is developed as an emerging technology in a semiconductor industry. The silicon w... [more] |
SDM2009-120 pp.15-19 |
SDM, ED |
2008-07-11 15:20 |
Hokkaido |
Kaderu2・7 |
Characterization of Ni/i-AlGaN/GaN Schottky Samples Fabricated after H3PO4-Etching Takayuki Sawada, Yuta Kaizuka, Kensuke Takahashi, Kazuaki Imai (Hokkaido Inst. of Tech.) ED2008-107 SDM2008-126 |
Electrical properties of bare i-AlGaN/GaN and Ni/i-AlGaN/GaN Schottky samples with various thickness of the AlGaN layer,... [more] |
ED2008-107 SDM2008-126 pp.351-355 |
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