|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW |
2011-04-15 13:25 |
Miyagi |
Tohoku University |
A 60GHz High Gain LNA in 90nm CMOS Katsunori Gomyo, Ta Tuan Thanh, Shoichi Tanifuji, Suguru Kameda, Noriharu Suematsu, Tadashi Takagi, Kazuo Tsubouchi (Tohoku Univ.) MW2011-2 |
This paper reported an integrated 60GHz band low-noise amplifier (LNA) implemented in a 90nm Si-CMOS process. To achiev... [more] |
MW2011-2 pp.7-10 |
MW |
2010-05-13 16:00 |
Hyogo |
University of Hyogo |
11W output power C-X band broadband high power balanced amplifier using GaN HEMT Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Yoshihito Hirano (MELCO) MW2010-17 |
This paper reports on GaN HEMT (Gallium Nitride High Electron Mobility Transistor) HIC (Hybrid Integrated Circuit) high ... [more] |
MW2010-17 pp.17-22 |
ED, MW |
2010-01-15 10:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
A Low-Voltage, Broadband Operation HBT Power Amplifier for CDMA Applications Kazuya Yamamoto, Atsushi Okamura, Takayuki Matsuzuka, Yutaka Yoshii, Satoshi Suzuki, Masatoshi Nakayama, Teruyuki Shimura, Naohito Yoshida (Mitsubishi Electric Corp.) ED2009-193 MW2009-176 |
This paper describes circuit design and measurement results of an HBT MMIC power amplifier module (PA) operating with a ... [more] |
ED2009-193 MW2009-176 pp.105-110 |
OPE, EMT, MW |
2009-07-31 09:50 |
Hokkaido |
Asahikawa Civic Culture Hall |
C-Ku band 120% relative bandwidth high efficiency high power amplifier using GaN HEMT Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Yoshihito Hirano (Mitsubishi electric corp) MW2009-68 OPE2009-68 |
This paper reports on GaN HEMT (Gallium Nitride High Electron Mobility Transistor) HIC (Hybrid Integrated Circuit) high ... [more] |
MW2009-68 OPE2009-68 pp.205-209 |
MW, ED |
2009-01-14 14:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
design of broadband amplifier with consideration of output capacitance Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Moriyasu Miyazaki (Mitsubishi Electric Co.) ED2008-200 MW2008-165 |
Recently, broadband amplifiers have become more important for ultra-wideband (UWB) radio communication systems and multi... [more] |
ED2008-200 MW2008-165 pp.11-15 |
SR |
2007-05-25 13:00 |
Tokyo |
|
Broadband Low Noise Amplifier with High Linearity for Software-Defined Radios and Cognitive Radios Munenari Kawashima, Yo Yamaguchi, Kenjiro Nishikawa, Kazuhiro Uehara (NTT) SR2007-14 |
We propose a broadband low noise amplifier with high linearity. The amplifier achieves broadband, low noise performance ... [more] |
SR2007-14 pp.79-83 |
MW |
2005-09-12 11:10 |
Tokyo |
|
InGaP/GaAs HBT Amplifier with Active Balun for Ultra-Wideband Self-Complementary Antenna Itaru Nakagawa (UEC), Masao Shimada (Nanoteco), Ryo Ishikawa, Kazuhiko Honjo (UEC) |
An InGaP/GaAs HBT MMIC amplifier with an active balun has been developed for ultra wideband communication systems(UWB). ... [more] |
MW2005-66 pp.21-26 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|