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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2010-06-22 17:10 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Resistive Memory utilizing Ferritin Protein with Nano Particle
-- Control of a Current Path using Metal Nano Particle -- Mutsunori Uenuma, Kentaro Kawano (NAIST/CREST JST), Shigeo Yoshii, Ichiro Yamashita (NAIST/Panasonic Corp.), Yukiharu Uraoka (NAIST/CREST JST) SDM2010-48 |
This study reports controlled single conductive path in ReRAM by embedding metal nano particles (NPs) in NiO film. Nano ... [more] |
SDM2010-48 pp.85-88 |
SDM, OME |
2010-04-23 10:10 |
Okinawa |
Okinawa-Ken-Seinen-Kaikan Bldg. |
[Invited Talk]
High Performance Nano System Fabricated by Bio Nano Molecule
-- Low Temperature Crystallization of Silicon Thin Film -- Yukiharu Uraoka, Ichiro Yamashita (NAIST) SDM2010-1 OME2010-1 |
Bio Nano materials with self assembling ability are very useful for fabricating high performance devices. So far we have... [more] |
SDM2010-1 OME2010-1 pp.1-4 |
SDM |
2009-06-19 16:00 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
Floating Gate Memory with Biomineralized Nanodots Embedded in High-k Gate Dielectric Kosuke Ohara, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC), Yukiharu Uraoka (NAIST/CREST) SDM2009-40 |
The memory properties of nano-dot-type floating gate memories with Co bio-nanodots (Co-BNDs) embedded in HfO2 layer were... [more] |
SDM2009-40 pp.77-80 |
SDM |
2008-12-05 13:50 |
Kyoto |
Kyoto University, Katsura Campus, A1-001 |
Electrical Properties of Bio-Nano-Dot Floating-gate MOSFETs with Ultra-thin Tunnel Oxide Hiroyuki Irifune, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (Nara Institute ofScience and Tecnology) SDM2008-189 |
So far, we have already developed floating gate memory devices using bio-nano-dot (BND). In this study, we fabricated an... [more] |
SDM2008-189 pp.27-30 |
SDM |
2008-06-10 14:35 |
Tokyo |
An401・402, Inst. Indus. Sci., The Univ. of Tokyo |
Bio-nano dot floating gate memory with High-k films Kosuke Ohara, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC) SDM2008-57 |
The memory characteristics of nanodot floating gate memories with High-k tunnel oxide were investigated using MOS capaci... [more] |
SDM2008-57 pp.89-92 |
SDM |
2007-12-14 10:00 |
Nara |
Nara Institute Science and Technology |
Acceleration of Crystal Growth by Pulsed Rapid Thermal Annealing using Ni-Ferritin Masahiro Ochi, Yuuta Sugawara, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ichiro Yamashita (Matsushita Electric Industrial Co.,Ltd., NAIST) SDM2007-222 |
Previously, we reported the fabrication method of high quality poly-Si thin film by using Ni core of ferritin with a dia... [more] |
SDM2007-222 pp.1-4 |
SDM |
2007-12-14 11:40 |
Nara |
Nara Institute Science and Technology |
Charge-Discharge Characteristics of Bio-Nano Dot Floating Gate MOS Devices with Ultrathin Tunnnel Oxide Tomoki Umeda, Hiroshi Yano, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ichiro Yamashita (NAIST,Matsushita Electric Industrial Co.) |
[more] |
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SDM |
2006-06-21 17:15 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Reduction of ferritin core embedded in Si thin film by thermal annealing Takashi Matsumura, Atsushi Miura, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Shigeo Yoshii, Ichiro Yamashita (Panasonic) |
[more] |
SDM2006-51 pp.55-59 |
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